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Suppression of self-interstitials in silicon during ion implantation via in-situ photoexcitation

Description: The influence of in-situ photoexcitation during low temperature implantation on self-interstitial agglomeration following annealing has been investigated using transmission electron microscopy (TEM). A reduction in the level of as-implanted damage determined by RBS and TEM occurs athermally during 150 keV self-ion implantation. The damage reduction following a 300 C anneal suggests that it is mostly divacancy related. Subsequent thermal annealing at 800 C resulted in the formation of (311) rod … more
Date: February 1, 1995
Creator: Ravi, J.; Erokhin, Y.; Christensen, K.; Rozgonyi, G. A.; Patnaik, B. K. & White, C. W.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Charge state defect engineering of silicon during ion implantation

Description: Effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined effects of internal electric fields and charge carrier injection on damage accumulation in Si. First, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. Second, we implanted B or Si ions into plain Si wafers while illuminating them with UV light. In each cas… more
Date: January 1997
Creator: Brown, R. A.; Ravi, J.; Erokhin, Y.; Rozgonyi, G. A. & White, C. W.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

The influence of an in-situ electric field on H{sup +} and He{sup +} implantation induced defects in silicon

Description: The influence of in-situ electronic perturbations on defect generation during 150-keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He{sup +} implant… more
Date: December 1, 1993
Creator: Ravi, J.; Erokhin, Y. N.; Koveshnikov, S.; Rozgonyi, G. A. & White, C. W.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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