Description: Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10/sup 16/ ions cm/sup -2/; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10/sup 16/ ions cm/sup -2/. In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites.
Date: January 1, 1982
Creator: Clark, G.J.; Marwick, A.D. & Poker, D.B.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department