2 Matching Results

Search Results

Advanced search parameters have been applied.

Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Description: Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
Date: December 1, 1997
Creator: Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C. et al.
Partner: UNT Libraries Government Documents Department

Boron-enhanced diffusion of boron from ultralow-energy boron implantation

Description: The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B{sup +}, the threshold implantation dose which leads to BED lies between 3 {times} 10{sup 14} and of 1 {times} 10{sup 15}/cm{sup {minus}2}. Formation of the shallowest possible junctions by 0.5 keV B{sup +} requires that the implant dose be kept lower than this threshold.
Date: May 3, 1998
Creator: Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C. et al.
Partner: UNT Libraries Government Documents Department