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Side extraction duoPIGatron-type ion source.

Description: We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, in such the ion can be extracted from side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1x40 mm. The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has stable arc, uniformly bright illumination, and dense plasma. The present work describes some of preliminary operating parameters of the ion source using Argon, BF3. The total unanalyzed beam currents are 23 mA using Ar at an arc current 5 A and 13 mA using BF3 gas at an arc current 6 A.
Date: August 26, 2007
Creator: GUSHENETS,V.I.; OKS, E.M.; HERSCHOVITCH, A. & JOHNSON, B.M.
Partner: UNT Libraries Government Documents Department

Upgrade of a vacuum arc ion source using a strong pulsed magnetic field

Description: A pulsed magnetic field of up to 10 kG was incorporated into a vacuum arc ion source. The field was established by a small coil surrounding the arc discharge region, powered by either an additional power supply (capacitor bank) or by the arc power supply (arc current and coil current in series). This addition has led so a number of improvements in source performance: the mean charge state of the metal ions produced was enhanced by a factor of up to two, for 30 different cathode materials from carbon to bismuth; hybrid metal/gaseous ion beams could be generated when an additional gas (nitrogen, oxygen or argon) was admitted into the source, with gaseous ion fraction as high as 50%; triggering of the source could be done by a very long lifetime gaseous pre-discharge technique. We also report on the use of a wire mesh to stabilize the plasma emission surface at the extractor as a means for achieving a flat beam current characteristic as a function of extraction voltage.
Date: August 1, 1995
Creator: Oks, E. M.; Brown, I. G.; Dickinson, M. R. & MacGill, R. A.
Partner: UNT Libraries Government Documents Department

High energy implantation with high-charge-state ions in a vacuum arc ion implanter

Description: Ion implantation energy can in principal be increased by increasing the charge states of the ions produced by the ion source rather than by increasing the implanter operating voltage, providing an important savings in cost and size of the implanter. In some recent work the authors have shown that the charge states of metal ions produced in a vacuum arc ion source can be elevated by a strong magnetic field. In general, the effect of both high arc current and high magnetic field is to push the distribution to higher charge states--the mean ion charge state is increased and new high charge states are formed. The effect is significant for implantation application--the mean ion energy can be about doubled without change in extraction voltage. Here they describe the ion source modifications, the results of time-of-flight measurements of ion charge state distributions, and discuss the use and implications of this technique as a means for doing metal iron implantation in the multi-hundreds of keV ion energy range.
Date: August 1, 1996
Creator: Oks, E. M.; Anders, A.; Brown, I. G.; Dickinson, M. R. & MacGill, R. A.
Partner: UNT Libraries Government Documents Department

Recent advances in vacuum arc ion sources

Description: Intense beams of metal ions can be formed from a vacuum arc ion source. Broadbeam extraction is convenient, and the time-averaged ion beam current delivered downstream can readily be in the tens of milliamperes range. The vacuum arc ion source has for these reasons found good application for metallurgical surface modification--it provides relatively simple and inexpensive access to high dose metal ion implantation. Several important source developments have been demonstrated recently, including very broad beam operation, macroparticle removal, charge state enhancement, and formation of gaseous beams. The authors have made a very broad beam source embodiment with beam formation electrodes 50 cm in diameter, producing a beam of width {approximately}35 cm for a nominal beam area of {approximately}1,000 cm{sup 2}, and a pulsed Ti beam current of about 7 A was formed at a mean ion energy of {approximately}100 keV. Separately, they`ve developed high efficiency macroparticle-removing magnetic filters and incorporated such a filter into a vacuum arc ion source so as to form macroparticle-free ion beams. Jointly with researchers at the High Current Electronics Institute at Tomsk, Russia, and the Gesellschaft fuer Schwerionenforschung at Darmstadt, Germany, they`ve developed a compact technique for increasing the charge states of ions produced in the vacuum arc plasma and thus providing a simple means of increasing the ion energy at fixed extractor voltage. Finally, operation with mixed metal and gaseous ion species has been demonstrated. Here, they briefly review the operation of vacuum marc ion sources and the typical beam and implantation parameters that can be obtained, and describe these source advances and their bearing on metal ion implantation applications.
Date: July 1, 1995
Creator: Brown, I. G.; Anders, A.; Anders, S.; Dickinson, M. R.; MacGill, R. A. & Oks, E. M.
Partner: UNT Libraries Government Documents Department

BERNAS ION SOURCE DISCHARGE SIMULATION

Description: The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Bemas ion source is the wide used ion source for ion implantation industry. The new simulation code was developed for the Bemas ion source discharge simulation. We present first results of the simulation for several materials interested in semiconductors. As well the comparison of results obtained with experimental data obtained at the ITEP ion source test-bench is presented.
Date: August 26, 2007
Creator: RUDSKOY,I.; KULEVOY, T.V.; PETRENKO, S.V.; KUIBEDA, R.P.; SELEZNEV, D.N.; PERSHIN, V.I. et al.
Partner: UNT Libraries Government Documents Department

Hybrid gas-metal co-implantation with a modified vacuum arc ion source

Description: Energetic beams of mixed metal and gaseous ion species can be generated with a vacuum arc ion source by adding gas to the arc discharge region. This could be an important tool for ion implantation research by providing a method for forming buried layers of mixed composition such as e.g. metal oxides and nitrides. In work to date, we have formed a number of mixed metal-gas ion beams including Ti+N, Pt+N, Al+O, and Zr+O. The particle current fractions of the metal-gas ion components in the beam ranged from 100% metallic to about 80% gaseous, depending on operational parameters. We have used this new variant of the vacuum arc ion source to carry out some exploratory studies of the effect of Al+O and Zr+O co-implantation on tribology of stainless steel. Here we describe the ion source modifications, species and charge state of the hybrid beams produced, and results of preliminary studies of surface modification of stainless steel by co-implantation of mixed Al/O or Zr/O ion beams. 5 figs, 21 refs.
Date: August 1, 1996
Creator: Oks, E.M.; Yushkov, G.Y.; Evans, P.J.; Oztarhan, A.; Brown, I.G.; Dickinson, M.R. et al.
Partner: UNT Libraries Government Documents Department

STATUS OF ITEP DECABORANE ION SOURCE PROGRAM.

Description: The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bemas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented.
Date: August 26, 2007
Creator: KULEVOY,T.V.; PETRENKO, S.V.; KUIBEDA, R.P.; SELEZNEV, D.N.; KOZLOV, A.V.; STASEVICH, YU.B. et al.
Partner: UNT Libraries Government Documents Department

Sources and transport systems for low energy extreme of ion implantation

Description: For the past seven years a joint research and development effort focusing on the design of steady state, intense ion sources has been in progress with the ultimate goal being to meet the two, energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. However, since the last Fortier is low energy ion implantation, focus of the endeavor has shifted to low energy ion implantation. For boron cluster source development, we started with molecular ions of decaborane (B{sub 10}H{sub 14}), octadecaborane (B{sub 18}H{sub 22}), and presently our focus is on carborane (C{sub 2}B{sub 10}H{sub 12}) ions developing methods for mitigating graphite deposition. Simultaneously, we are developing a pure boron ion source (without a working gas) that can form the basis for a novel, more efficient, plasma immersion source. Our Calutron-Berna ion source was converted into a universal source capable of switching between generating molecular phosphorous P{sub 4}{sup +}, high charge state ions, as well as other types of ions. Additionally, we have developed transport systems capable of transporting a very large variety of ion species, and simulations of a novel gasless/plasmaless ion beam deceleration method were also performed.
Date: June 6, 2010
Creator: Hershcovitch, A.; Batalin, V.A.; Bugaev, A.S.; Gushenets, V.I.; Alexeyenko, O.; Gurkova, E. et al.
Partner: UNT Libraries Government Documents Department

ION SOURCES FOR ENERGY EXTREMES OF ION IMPLANTATION.

Description: For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.
Date: August 26, 2007
Creator: HERSCHCOVITCH,A.; JOHNSON, B.M.; BATALIN, V.A.; KROPACHEV, G.N.; KUIBEDA, R.P.; KULEVOY, T.V. et al.
Partner: UNT Libraries Government Documents Department