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Radio-frequency actuated polymer-based phononic meta-materials for control of ultrasonic waves

Description: This article describes the achievement of radio-frequency control of a n ultrasonic phononic crystal by encapsulating it in a composite of high k-10% KF-doped BaTiO₃ dielectric nanoparticles with poly(N-isopropylacrylamide) (PNIP Am)-based hydrogel.
Date: July 14, 2016
Creator: Walker, Ezekiel; Wang, Zhiming & Neogi, Arup
Partner: UNT College of Arts and Sciences

Development of Indium Oxide Nanowires as Efficient Gas Sensors

Description: Crystalline indium oxide nanowires were synthesized following optimization of growth parameters. Oxygen vacancies were found to impact the optical and electronic properties of the as-grown nanowires. Photoluminescence measurements showed a strong U.V emission peak at 3.18 eV and defect peaks in the visible region at 2.85 eV, 2.66 eV and 2.5 eV. The defect peaks are attributed to neutral and charged states of oxygen vacancies. Post-growth annealing in oxygen environment and passivation with sulphur are shown to be effective in reducing the intensity of the defect induced emission. The as-grown nanowires connected in an FET type of configuration shows n-type conductivity. A single indium oxide nanowire with ohmic contacts was found to be sensitive to gas molecules adsorbed on its surface.
Date: December 2011
Creator: Gali, Pradeep
Partner: UNT Libraries

Growth and Characterization of β-Iron Disilicide, β-Iron Silicon Germanide, and Osmium Silicides

Description: The semiconducting silicides offer significant potential for use in optoelectronic devices. Full implementation of the materials, however, requires the ability to tailor the energy gap and band structure to permit the synthesis of heterojunctions. One promising approach is to alloy the silicides with Ge. As part of an investigation into the synthesis of semiconducting silicide heterostructures, a series of β-Fe(Si1−xGex)2 epilayer samples, with nominal alloy content in the range 0 < x < 0.15, have been prepared by molecular beam epitaxy on Si(100). I present results of the epitaxial and crystalline quality of the films, as determined by reflection high-energy electron diffraction, Rutherford backscattering spectroscopy, and double crystal x-ray diffraction, and of the band gap dependence on the alloy composition, as determined by Fourier transform infrared spectroscopy. A reduction in band gap was observed with increasing Ge content, in agreement with previous theoretical predictions. However Ge segregation was also observed in β-Fe(Si1−xGex)2 epilayers when x > 0.04. Osmium silicide films have been grown by molecular beam epitaxy on Si(100). The silicides have been grown using e-beam evaporation sources for both Os and Si onto Si(100) substrates at varying growth rates and temperatures ranging from 600-700ºC. The resulting films have been analyzed using reflection high-energy electron diffraction, Raman spectroscopy, reflectivity measurements, in-plane and out of plane X-ray diffraction and temperature dependent magnetotransport. A change in crystalline quality is observed with an increase in Si overpressure. For a lower silicon to osmium flux ration (JSi/JOs=1.5) both OsSi2 and Os2Si3 occur, whereas with a much larger Si overpressure (JSi/JOs>4), crystalline quality is greatly increased and only a single phase, Os2Si3, is present. The out-of-plane X-ray diffraction data show that the film grows along its [4 0 2] direction, with a good crystal quality as evidenced by the small FWHM in the rocking curve. ...
Date: August 2009
Creator: Cottier, Ryan James
Partner: UNT Libraries

Development of High Gain Ultraviolet Photo Detectors Based on Zinc Oxide Nanowires

Description: Semiconductor nanowires acts as an emerging class of materials with great potential for applications in future electronic devices. Small size, large surface to volume ratio and high carrier mobility of nanowires make them potentially useful for electronic applications with high integration density. In this thesis, the focus was on the growth of high quality ZnO nanowires, fabrication of field effect transistors and UV- photodetectros based on them. Intrinsic nanowire parameters such as carrier concentration, field effect mobility and resistivity were measured by configuring nanowires as field effect transistors. The main contribution of this thesis is the development of a high gain UV photodetector. A single ZnO nanowire functioning as a UV photodetector showed promising results with an extremely high spectral responsivity of 120 kA/W at wavelength of 370 nm. This corresponds to high photoconductive gain of 2150. To the best of our knowledge, this is the highest responsivity and gain reported so far, the previous values being responsivity=40 kA/W and gain=450. The enhanced photoconductive behavior is attributed to the presence of surface states that acts as hole traps which increase the life time of photogenerated electrons raising the photocurrent. This work provides the evidence of such solid states and preliminary results to modify the surface of ZnO nanowire is also produced.
Date: May 2014
Creator: Mallampati, Bhargav
Partner: UNT Libraries

Synthesis Strategies and a Study of Properties of Narrow and Wide Band Gap Nanowires

Description: Various techniques to synthesize nanowires and nanotubes as a function of growth temperature and time were investigated. These include growth of nanowires by a chemical vapor deposition (CVD) system using vapor-liquid-solid (VLS) growth mechanism and electro-chemical synthesis of nanowires and nanotubes. Narrow band gap InSb Eg = 0.17 eV at room temp) nanowires were successively synthesized. Using a phase diagram, the transition of the nanowire from metallic- semiconducting- semi-metallic phase was investigated. A thermodynamic model is developed to show that the occurrence of native defects in InSb nanowires influenced by the nanowire growth kinetics and thermodynamics of defect formation. Wide band gap ZnO (Eg = 3.34 eV) and In2O3 (3.7 eV) were also synthesized. ZnO nanowires and nanotubes were successfully doped with a transition metal Fe, making it a Dilute Magnetic Semiconductor of great technological relevance. Structural and electronic characterizations of nanowires were studied for different semiconducting, metallic and semi-metallic nanowires. Electron transport measurements were used to estimate intrinsic material parameters like carrier concentration and mobility. An efficient gas sensing device using a single In2O3 nanowire was studied and which showed sensitivity to reducing gas like NH3 and oxidizing gas like O2 gas at room temperature. The efficiency of the gas sensing device was found to be sensitive to the nature of contacts as well as the presence of surface states on the nanowire.
Date: May 2014
Creator: Sapkota, Gopal
Partner: UNT Libraries

Brownian Movement and Quantum Computers

Description: This problem in lieu of thesis is a discussion of two topics: Brownian movement and quantum computers. Brownian movement is a physical phenomenon in which the particle velocity is constantly undergoing random fluctuations. Chapters 2, 3 and 4, describe Brownian motion from three different perspectives. The next four chapters are devoted to the subject of quantum computers, which are the signal of a new era of technology and science combined together. In the first chapter I present to a reader the two topics of my problem in lieu of thesis. In the second chapter I explain the idea of Brownian motion, its interpretation as a stochastic process and I find its distribution function. The next chapter illustrates the probabilistic picture of Brownian motion, where the statistical averages over trajectories are related to the probability distribution function. Chapter 4 shows how to derive the Langevin equation, introduced in chapter 1, using a Hamiltonian picture of a bath with infinite number of harmonic oscillators. The chapter 5 explains how the idea of quantum computers was developed and how step-by-step all the puzzles for the field of quantum computers were created. The next chapter, chapter 6, discus the basic quantum unit of information namely, the so called qubit and its properties. Chapter 7 is devoted to quantum logic gates, which are important for conducting logic operation in quantum computers. This chapter explains how they were developed and how they are different from classical ones. Chapter 8 is about the quantum algorithm, Shor's algorithm. Quantum algorithm in quantum computers enables one to solve problems that are hard to solve on digital computers. The last chapter contains conclusions on Brownian movement and the field of quantum computers.
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Date: December 2004
Creator: Habel, Agnieszka
Partner: UNT Libraries

Oligonucleotide guanosine conjugated to gallium nitride nano-structures for photonics.

Description: In this work, I studied the hybrid system based on self-assembled guanosine crystal (SAGC) conjugated to wide-bandgap semiconductor gallium nitride (GaN). Guanosine is one of the four bases of DNA and has the lowest oxidation energy, which favors carrier transport. It also has large dipole moment. Guanosine molecules self-assemble to ribbon-like structure in confined space. GaN surface can have positive or negative polarity depending on whether the surface is Ga- or N-terminated. I studied SAGC in confined space between two electrodes. The current-voltage characteristics can be explained very well with the theory of metal-semiconductor-metal (MSM) structure. I-V curves also show strong rectification effect, which can be explained by the intrinsic polarization along the axis of ribbon-like structure of SAGC. GaN substrate property influences the properties of SAGC. So SAGC has semiconductor properties within the confined space up to 458nm. When the gap distance gets up to 484nm, the structure with guanosine shows resistance characteristics. The photocurrent measurements show that the bandgap of SAGC is about 3.3-3.4eV and affected by substrate properties. The MSM structure based on SAGC can be used as photodetector in UV region. Then I show that the periodic structure based on GaN and SAGC can have photonic bandgaps. The bandgap size and the band edges can be tuned by tuning lattice parameters. Light propagation and emission can be tuned by photonic crystals. So the hybrid photonic crystal can be potentially used to detect guanosine molecules. If guanosine molecules are used as functional linker to other biomolecules which usually absorb or emit light in blue to UV region, the hybrid photonic crystal can also be used to tune the coupling of light source to guanosine molecules, then to other biomolecules.
Date: August 2008
Creator: Li, Jianyou
Partner: UNT Libraries

Interaction of Plasmons and Excitons for Low-Dimension Semiconductors

Description: The effects of surface plasmon for InGaN/GaN multi-quantum wells and ZnO nanoparticles optical linear and nonlinear emission efficiency had been experimentally studied. Due to the critical design for InGaN MQWs with inverted hexagonal pits based on GaN, both contribution of surface plasmon effect and image charge effect at resonant and off resonant frequencies were experimentally and theoretically investigated. With off- resonant condition, the InGaN MQWs emission significantly enhanced by metal nanoparticles. This enhancement was caused by the image charge effect, due to the accumulation of carriers to NPs region. When InGaN emission resonated with metal particles SP modes, surface Plasmon effect dominated the emission process. We also studied the surface plasmon effect for ZnO nanoparticles nonlinear optical processes, SHG and TPE. Defect level emission had more contribution at high incident intensity. Emissions are different for pumping deep into the bulk and near surface. A new assumption to increase the TPE efficiency was studied. We thought by using Au nanorods localized surface plasmon mode to couple the ZnO virtual state, the virtual state’s life time would be longer and experimentally lead the emission enhancement. We studied the TPE phenomena at high and near band gap energy. Both emission intensity and decay time results support our assumption. Theoretically, the carriers dynamic mechanism need further studies.
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Date: December 2014
Creator: Lin, Jie (physicist)
Partner: UNT Libraries

Electric Field Enhanced Photoluminescence of CdTe Quantum Dots Encapsulated in Poly (N-Isopropylacrylamide) Nano-Spheres

Description: This article shows an electric field dependent collapse of the poly(N-isopropylacramide) nanospheres and employs the electric field dependence as a means to adjust the photoluminescence process of the quantum dots in a hybrid material.
Date: November 10, 2008
Creator: Garner, Brett W.; Cai, Tong; Hu, Zhibing & Neogi, Arup
Partner: UNT College of Arts and Sciences

Enhancement of Light Emission from Metal Nanoparticles Embedded Graphene Oxide

Description: A fully oxidized state of graphene behaves as a pure insulating while a pristine graphene behaves as a pure conducting. The in-between oxide state in graphene which is the controlled state of oxide behaves as a semiconducting. This is the key condition for tuning optical band gap for the better light emitting property. The controlling method of oxide in graphene structure is known as reduction which is the mixed state of sp2 and sp3 hybrid state in graphene structure. sp2 hybridized domains correspond to pure carbon-carbon bond i.e. pristine graphene while sp3 hybridized domains correspond to the oxide bond with carbon i.e. defect in graphene structure. This is the uniqueness of the graphene-base material. Graphene is a gapless material i.e. having no bandgap energy and this property prevents it from switching device applications and also from the optoelectronic devices applications. The main challenge for this material is to tune as a semiconducting which can open the optical characteristics and emit light of desired color. There may be several possibilities for the modification of graphene-base material that can tune a band gap. One way is to find semiconducting property by doping the defects into pristine graphene structure. Other way is oxides functional groups in graphene structure behaves as defects. The physical properties of graphene depend on the amount of oxides present in graphene structure. So if there are more oxides in graphene structure then this material behaves as a insulating. By any means if it can be reduced then oxides amount to achieve specific proportion of sp2 and sp3 that can emit light of desired color. Further, after achieving light emission from graphene base material, there is more possibility for the study of non-linear optical property. In this work, plasmonic effect in graphene oxide has been focused. Mainly there are two ...
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Date: May 2016
Creator: Karna, Sanjay K
Partner: UNT Libraries

Nonlinear Light Generation from Optical Cavities and Antennae

Description: Semiconductor based micro- and nano-structures grown in a systematic and controlled way using selective area growth are emerging as a promising route toward devices for integrated optical circuitry in optoelectronics and photonics field. This dissertation focuses on the experimental investigation of the nonlinear optical effects in selectively grown gallium nitride micro-pyramids that act as optical cavities, zinc oxide submicron rods and indium gallium nitride multiple quantum well core shell submicron tubes on the apex of GaN micro pyramids that act as optical antennae. Localized spatial excitation of these low dimensional semiconductor structures was optimized for nonlinear optical light (NLO) generation due to second harmonic generation (SHG) and multi-photon luminescence (MPL). The evolution of both processes are mapped along the symmetric axis of the individual structures for multiple fundamental input frequencies of light. Effects such as cavity formation of generated light, electron-hole plasma generation and coherent emission are observed. The efficiency and tunability of the frequency conversion that can be achieved in the individual structures of various geometries are estimated. By controlling the local excitation cross-section within the structures along with modulation of optical excitation intensity, the nonlinear optical process generated in these structures can be manipulated to generate coherent light in the UV-Blue region via SHG process or green emission via MPL process. The results show that these unique structures hold the potential to convert red input pulsed light into blue output pulsed light which is highly directional.
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Date: May 2017
Creator: Butler, Sween J
Partner: UNT Libraries

Broad-band Light Emission From Ion Implanted Silicon Nanocrystals Via Plasmonic and Non-plasmonic Effects for Optoelectronics

Description: Broad band light emission ranging from the ultraviolet (UV) to the near infrared (NIR) has been observed from silicon nanoparticles fabricated using low energy (30-45 keV) metal and non-metal ion implantation with a fluence of 5*1015 ions/cm2 in crystalline Si(100). It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing results in nucleation of metal nanoclusters in the vicinity of Si nanoparticles which enhances the emission intensity. Structural and optical characterization demonstrate that the emission originates from both highly localized defect bound excitons at the Si/Sio2 interface, as well as surface and interface traps associated with the increased surface area of the Si nanocrystals. The emission in the UV is due to interband transitions from localized excitonic states at the interface of Si/SiO2 or from the surface of Si nanocrystals. The radiative efficiency of the UV emission from the Si nanoparticles can be modified by the localized surface plasmon (LSP) interaction induced by the nucleation of silver nanoparticles with controlled annealing of the samples. The UV emission from Si nanoclusters are coupled resonantly to the LSP modes. The non-resonant emission can be enhanced by electrostatic-image charge effects. The emission in the UV (~3.3 eV) region can also be significantly enhanced by electrostatic image charge effects induced by Au nanoparticles. The UV emission from Si nanoclusters, in this case, can be coupled without LSP resonance. The recombination of carriers in Si bound excitons is mediated by transverse optical phonons due to the polarization of the surface bound exciton complex. The low energy side of emission spectrum at low temperature is dominated by 1st and 2nd order phonon replicas. Broad band emission ranging from the UV to the ...
Date: December 2012
Creator: Singh, Akhilesh K.
Partner: UNT Libraries

High Efficiency High Power Blue Laser by Resonant Doubling in PPKTP

Description: I developed a high power blue laser for use in scientific and technical applications (eg. precision spectroscopy, semiconductor inspection, flow cytometry, etc). It is linearly polarized, single longitudinal and single transverse mode, and a convenient fiber coupled continuous wave (cw) laser source. My technique employs external cavity frequency doubling and provides better power and beam quality than commercially available blue diode lasers. I use a fiber Bragg grating (FBG) stabilized infrared (IR) semiconductor laser source with a polarization maintaining (PM) fiber coupled output. Using a custom made optical and mechanical design this output is coupled with a mode matching efficiency of 96% into the doubling cavity. With this carefully designed and optimized cavity, measurements were carried out at various fundamental input powers. A net efficie ncy of 81 % with an output power of 680 mW at 486 nm was obtained using 840 mW of IR input. Also I report an 87.5 % net efficiency in coupling of blue light from servo locked cavity into a single mode PM fiber. Thus I have demonstrated a total fiber to fiber efficiency of 71% can be achieved in our approach using periodically poled potassium titanyl phosphate (PPKTP). To obtain these results, all losses in the system were carefully studied and minimized.
Date: August 2011
Creator: Danekar, Koustubh
Partner: UNT Libraries

A Study of the Synthesis and Surface Modification of UV Emitting Zinc Oxide for Bio-Medical Applications

Description: This thesis presents a novel ZnO-hydrogel based fluorescent colloidal semiconductor nanomaterial system for potential bio-medical applications such as bio-imaging, cancer detection and therapy. The preparation of ZnO nanoparticles and their surface modification to make a biocompatible material with enhanced optical properties is discussed. High quality ZnO nanoparticles with UV band edge emission are prepared using gas evaporation method. Semiconductor materials including ZnO are insoluble in water. Since biological applications require water soluble nanomaterials, ZnO nanoparticles are first dispersed in water by ball milling method, and their aqueous stability and fluorescence properties are enhanced by incorporating them in bio-compatible poly N-isopropylacrylamide (PNIPAM) based hydrogel polymer matrix. The optical properties of ZnO-hydrogel colloidal dispersion versus ZnO-Water dispersion were analyzed. The optical characterization using photoluminescence spectroscopy indicates approximately 10 times enhancement of fluorescence in ZnO-hydrogel colloidal system compared to ZnO-water system. Ultrafast time resolved measurement demonstrates dominant exciton recombination process in ZnO-hydrogel system compared to ZnO-water system, confirming the surface modification of ZnO nanoparticles by hydrogel polymer matrix. The surface modification of ZnO nanoparticles by hydrogel induce more scattering centers per unit area of cross-section, and hence increase the luminescence from the ZnO-gel samples due to multiple path excitations. Furthermore, surface modification of ZnO by hydrogel increases the radiative efficiency of this hybrid colloidal material system thereby contributing to enhanced emission.
Date: May 2009
Creator: John, Sween
Partner: UNT Libraries

Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures

Description: The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.
Date: May 2012
Creator: Gryczynski, Karol Grzegorz
Partner: UNT Libraries

Effects of Dissipation on Propagation of Surface Electromagnetic and Acoustic Waves

Description: With the recent emergence of the field of metamaterials, the study of subwavelength propagation of plane waves and the dissipation of their energy either in the form of Joule losses in the case of electomagnetic waves or in the form of viscous dissipation in the case of acoustic waves in different interfaced media assumes great importance. with this motivation, I have worked on problems in two different areas, viz., plasmonics and surface acoustics. the first part (chapters 2 & 3) of the dissertation deals with the emerging field of plasmonics. Researchers have come up with various designs in an efort to fabricate efficient plasmonic waveguides capable of guiding plasmonic signals. However, the inherent dissipation in the form of Joule losses limits efficient usage of surface plasmon signal. a dielectric-metal-¬dielectric planar structure is one of the most practical plasmonic structures that can serve as an efficient waveguide to guide electromagnetic waves along the metal-dielectric boundary. I present here a theoretical study of propagation of surface plasmons along a symmetric dielectric-metal-dielectric structure and show how proper orientation of the optical axis of the anisotropic substrate enhances the propagation length. an equation for propagation length is derived in a wide range of frequencies. I also show how the frequency of coupled surface plasmons can be modulated by changing the thickness of the metal film. I propose a Kronig-Penny model for the plasmonic crystal, which in the long wavelength limit, may serve as a homogeneous dielectric substrate with high anisotropy which do not exist for natural optical crystals. in the second part (chapters 4 & 5) of the dissertation, I discuss an interesting effect of extraordinary absorption of acoustic energy due to resonant excitation of Rayleigh waves in a narrow water channel clad between two metal plates. Starting from the elastic properties of the ...
Date: May 2012
Creator: Nagaraj, Nagaraj
Partner: UNT Libraries

Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures

Description: III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN MQWs. the dependence on resonant interaction between the plasmons and the light emitter limits the applications of plasmonics for light emission. This dissertation presents a new non-resonant mechanism based on electrostatic interaction of carriers with induced image charges in a nearby metallic nanoparticle. Enhancement similar in strength to that of plasmonics is observed, without the restrictions imposed upon resonant interactions. in this work we demonstrate several key features of this new interaction, including intensity-dependent saturation, increase in the radiative recombination lifetime, and strongly inhomogeneous light emission. We also present a model for the interaction based on the aforementioned image charge interactions. Also discussed are results of work done in the course of this research resulting in the development of a novel technique for strain measurement in light-emitting structures. This technique makes use of a spectral fitting model to extract information about electron-phonon interactions in the sample which can then be related to strain using theoretical modeling.
Date: May 2012
Creator: Llopis, Antonio
Partner: UNT Libraries

Ultrafast Spectroscopy of Hybrid Ingan/gan Quantum Wells

Description: Group III nitrides are efficient light emitters. The modification of internal optoelectronic properties of these materials due to strain, external or internal electric field are an area of interest. Insertion of metal nanoparticles (MNPs) (Ag, Au etc) inside the V-shaped inverted hexagonal pits (IHP) of InGaN/GaN quantum wells (QWs) offers the potential of improving the light emission efficiencies. We have observed redshift and blueshift due to the Au MNPs and Ag MNPs respectively. This shift could be due to the electric field created by the MNPs through electrostatic image charge. We have studied the ultrafast carrier dynamics of carriers in hybrid InGaN/GaN QWs. The change in quantum confinement stark effect due to MNPs plays an important role for slow and fast carrier dynamics. We have also observed the image charge effect on the ultrafast differential transmission measurement due to the MNPs. We have studied the non-linear absorption spectroscopy of these materials. The QWs behave as a discharging of a nanocapacitor for the screening of the piezoelectric field due to the photo-excited carriers. We have separated out screening and excitonic bleaching components from the main differential absorption spectra of InGaN/GaN QWs.
Date: August 2012
Creator: Mahat, Meg Bahadur
Partner: UNT Libraries