7 Matching Results

Search Results

Advanced search parameters have been applied.

Ion Beam Deposition of (NbTa)2O5/SiO2 Multilayers for High-Efficiency Dielectric Gratings for High Average Power Laser Systems Operating at 800 nm Central Wavelength

Description: The ion beam deposition of (NbTa)2O5 has been investigated for realizing high reflectance multilayer stacks of high damage threshold for applications in the engineering of dielectric gratings for use at 800 nm. Deposition conditions were optimized to yield fully oxidized films as determined from x-ray photoelectron spectroscopy (XPS). The film properties were also investigated using spectroscopic ellipsometry, and spectrophotometry to determine their refractive index and thickness respectively. Damage threshold testing was performed on single films using an amplified Ti:Sapphire laser producing a train of 170 ps pulses at a wavelength of 800 nm with an average energy of 100 mJ. The laser output was focused at the surface of the samples via a 0.5 m focal length lens to generate fluences ranging from 0 to 9 J/cm{sup 2}. At the optimum deposition conditions for highest optical quality and damage threshold, high reflector stacks of (NbTa){sub 2}O{sub 5}/SiO2 were fabricated. These stacks were employed to fabricate dielectric gratings with 1740 l/mm for use with 800 nm light. At an input angle of 8{sup o} from Littrow and a wavelength from 770 to 830 nm, >90% diffraction efficiency is achieved, with peak diffraction efficiency of >97%. The demonstration of dielectric gratings at 800 nm is opening the pathway to significantly increase the power handling capabilities of grating compressors for picosecond and femtosecond chirped pulse amplifications systems.
Date: June 2, 2006
Creator: Menoni, C S; Patel, D; Brizuela, F; Rocca, J J; Nguyen, H T & Britten, J A
Partner: UNT Libraries Government Documents Department

High-Efficiency 800 nm Multi-Layer Dielectric Gratings for High Average Power Laser Systems

Description: We report on the design, fabrication, and performance of a 1740 l/mm multilayer dielectric diffraction grating for use with 800 nm light. At an input angle of 8{sup o} from Littrow and a wavelength from 770 to 830 nm, >90% diffraction efficiency is achieved, with peak diffraction efficiency of >97% at 800nm. We will also comment on laser damage threshold and power-handling properties.
Date: June 15, 2006
Creator: Nguyen, H T; Britten, J A; Patel, D; Brizuela, F; Rocca, J J & Menoni, C S
Partner: UNT Libraries Government Documents Department

Structural transformations in Sc/Si multilayers irradiated by EUVlasers

Description: Multilayer mirrors for the extreme ultraviolet (EUV) are keyelements for numerous applications of coherent EUV sources such as newtabletop lasers and free-electron lasers. However the field ofapplications is limited by the radiation and thermal stability of themultilayers. Taking into account the growing power of EUV sources thestability of the optics becomes crucial. To overcome this problem it isnecessary to study the degradation of multilayers and try to increasetheir temporal and thermal stability. In this paper we report the resultsof detailed study of structural changes in Sc/Simultilayers when exposedto intense EUV laser pulses. Various types of surface damage such asmelting, boiling, shockwave creation and ablation were observed asirradiation fluencies increase. Cross-sectional TEM study revealed thatthe layer structure was completely destroyed in the upper part ofmultilayer, but still survived below. The layers adjacent tothe substrateremained intact even through the multilayer surface melted down, thoughthe structure of the layers beneath the molten zone was noticeablychanged. The layer structure in this thermally affected zone is similarto that of isothermally annealed samples. All stages of scandium silicideformation such as interdiffusion, solid-state amorphization, silicidecrystallization, etc., are present in the thermally affected zone. Itindicates a thermal nature of the damage mechanism. The tungstendiffusion barriers were applied to the scandium/silicon interfaces. Itwas shown that the barriers inhibited interdiffusion and increased thethermal stability of Sc/Si mirrors.
Date: August 21, 2007
Creator: Voronov, D.L.; Zubarev, E.N.; Pershyn, Y.P.; Sevryukova, V.A.; Kondratenko, V.V.; Vinogradov, A.V. et al.
Partner: UNT Libraries Government Documents Department

Extreme Ultraviolet Laser-based Table-top Aerial Image Metrology of Lithographic Masks

Description: We report the first at-wavelength line edge roughness measurements of patterned EUV lithography masks realized using a table-top aerial imaging system based on a table-top {lambda}=13.2 laser.
Date: February 10, 2010
Creator: Brizuela, F.; Carbajo, S.; Sakdinawat, A.; Wang, Y.; Alessi, D.; Martz, D. et al.
Partner: UNT Libraries Government Documents Department

13.2 nm Table-Top Inspection Microscope for Extreme Ultraviolet Lithography Mask Defect Characterization

Description: We report on a reflection microscope that operates at 13.2-nm wavelength with a spatial resolution of 55{+-}3 nm. The microscope uses a table-top EUV laser to acquire images of photolithography masks in 20 seconds.
Date: April 7, 2009
Creator: Brizuela, F.; Wang, Y.; Brewer, C.; Pedaci, F.; Chao, W.; Anderson, E. et al.
Partner: UNT Libraries Government Documents Department

Advances in full field microscopy with table-top soft x-ray lasers

Description: We describe recent advances in the demonstration of table-top full field microscopes that use soft x-ray lasers for illumination. We have achieved wavelength resolution and single shot exposure operation with a very compact 46.9 nm microscope based on a desk-top size capillary discharge laser. This {lambda}-46.9 nm microscope has been used to capture full field images of a variety of nanostructure systems and surfaces. In a separate development we have demonstrated a zone plate microscope that uses {lambda}=13.2 nm laser illumination to image absorption defects in an extreme ultraviolet lithography (EUVL) mask in the same geometry used in a 4x demagnification EUVL stepper. Characterization of the microscope’s transfer function shows it can resolve 55 nm half period patterns. With these capabilities, the {lambda}-13.2 nm microscope is well suited for evaluation of pattern and defect printability of EUVL masks for the 22 nm node.
Date: May 18, 2009
Creator: Menoni, C. S.; Brizuela, F.; Wang, Y.; Brewer, C. A.; Luther, B. M.; Pedaci, F. et al.
Partner: UNT Libraries Government Documents Department

Inspection 13.2 nm table-top full-field microscope

Description: We present results on a table-top microscope that uses an EUV stepper geometry to capture full-field images with a halfpitch spatial resolution of 55 nm. This microscope uses a 13.2 nm wavelength table-top laser for illumination and acquires images of reflective masks with exposures of 20 seconds. These experiments open the path to the realization of high resolution table-top imaging systems for actinic defect characterization.
Date: February 23, 2009
Creator: Brizuela, F.; Wang, Y.; Brewer, C. A.; Pedaci, F.; Chao, W.; Anderson, E. H. et al.
Partner: UNT Libraries Government Documents Department