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M-shell x-ray production cross sections in thin targets of ₇₉Au, ₈₂Pb, ₈₃Bi, and ₉₂U by 0.3 - 2.6-MeV ₁¹H+ and ₂⁴He+ ions

Description: Article discussing M-shell x-ray-production cross sections in thin targets of ₇₉Au, ₈₂Pb, ₈₃Bi, and ₉₂U by 0.3 - 2.6-MeV ₁⁴H+ and ₂⁴He+ ions.
Date: October 1982
Creator: Mehta, R.; Duggan, Jerome L.; Price, J. L.; McDaniel, Floyd Del. (Floyd Delbert), 1942- & Lapicki, Gregory
Partner: UNT College of Arts and Sciences

Projectile charge-state dependence of K-shell ionization by silicon ions: A comparison of Coulomb ionization theories for direct ionization and electron capture with x-ray production data

Description: Article discussing projectile charge-state dependence of K-shell ionization by silicon ions and a comparison of Coulomb ionization theories for direct ionization and electron capture with x-ray production data.
Date: October 1977
Creator: McDaniel, Floyd Del. (Floyd Delbert), 1942-; Duggan, Jerome L.; Basbas, George; Miller, P. D. & Lapicki, Gregory
Partner: UNT College of Arts and Sciences

M-shell x-ray production cross sections for 0.5-2.5-MeV Be+ ions incident upon selected elements from praseodymium to bismuth

Description: This article discusses M-shell x-ray production cross sections for 0.5-2.5-MeV Be+ ions incident upon selected elements from praseodymium to bismuth.
Date: January 15, 1988
Creator: Price, J. L.; Duggan, Jerome L.; McDaniel, Floyd Del. (Floyd Delbert), 1942-; Lapicki, Gregory & Mehta, R.
Partner: UNT College of Arts and Sciences

K-shell ionization by low-velocity ions

Description: Article discussing K-shell ionization by low-velocity ions. K-shell x-ray-production measurements are reported for protons, deuterons, and alpha particles incident on thin foils of copper, niobium, silver, and antimony.
Date: August 1981
Creator: Rice, R.; McDaniel, Floyd Del. (Floyd Delbert), 1942-; Basbas, George & Duggan, Jerome L.
Partner: UNT College of Arts and Sciences

Synthesis, Characterization, Structural, and Optical Properties of Zinc Oxide Nanostructures Embedded in Silicon Based Substrates

Description: Structural and optical properties of ZnO nanostructures synthesized by low energy ion implantation technique were examined. ZnO molecular ions were implanted into Si/SiO2 substrates at room temperature and then furnace annealed under different temperatures and environments. In all as-implanted samples only Zn nanostructures with varying diameters distributed into the Si/SiO2 matrices were observed. No trace of ZnO was found. The distributions of Zn nanostructures in Si/SiO2 closely matched results from Stopping and Range of Ions in Matter (SRIM) simulations. During annealing at 750 oC, Zn diffused both toward and away from the surface of the substrate and combine with oxygen to form ZnO nanostructures. At higher annealing temperatures ZnO bonding started to break down and transfer to zinc silicate (Zn2SiO4), and at 900 oC the ZnO was completely converted into Zn2SiO4. The average sizes of Zn/ZnO nanostructures depended on the ion fluence. If the fluence increased the average sizes of nanostructures also increased and vice versa. For room temperature photoluminescence (RT-PL), band-edge emission in the ultraviolet (UV) region was observed from all samples annealed at 700 oC/750 oC and were slightly blue shifted as compare to bulk ZnO. Donor-bound exciton (D,X) and acceptor-bound exciton (A,X) transitions were observed in low temperature photoluminescence (PL). The lifetime of both donor-bound excitonic emission (D, X) and acceptor-bound excitonic emission (A, X) were found to be in the picosecond (ps) range.
Date: May 2014
Creator: Pandey, Bimal
Partner: UNT Libraries

The Stopping Power of Amorphous and Channelled Silicon at All Energies as Computed with the Binary Encounter Approximation

Description: This thesis utilizes the binary encounter approximation to calculate the stopping power of protons penetrating silicon. The main goal of the research was to make predictions of the stopping power of silicon for low-energy and medium-energy channelled protons, in the hope that this will motivate experiments to test the theory developed below. In attaining this goal, different stopping power theories were compared and the binary encounter approach was applied to random (non-channelled) and high-energy channelled protons in silicon, and these results were compared with experimental data.
Date: December 1994
Creator: Bickel, David, 1970-
Partner: UNT Libraries

₁¹H+ - and ₂⁴He+ - induced M-shell x-ray-production cross sections for selected elements in the rare-earth region

Description: Article on ₁¹H+ and ₂⁴He+ -induced M-shell x-ray-production cross sections for selected elements in the rare-earth region.
Date: December 1983
Creator: Mehta, R.; Duggan, Jerome L.; Price, J. L.; Kocur, P. M.; McDaniel, Floyd Del. (Floyd Delbert), 1942- & Lapicki, Gregory
Partner: UNT College of Arts and Sciences