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Mask roughness induced LER: a rule of thumb -- paper

Description: Much work has already been done on how both the resist and line-edge roughness (LER) on the mask affect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and currently factor into LER limits. Here, we propose a 'rule-of-thumb' simplified solution that provides a fast and powerful method to obtain mask roughness induced LER. We present modeling data on an older generation mask with a roughness of 230 pm as well as the ultimate target roughness of 50 pm. Moreover, we consider feature sizes of 50 nm and 22 nm, and show that as a function of correlation length, the LER peaks at the condition that the correlation length is approximately equal to the resolution of the imaging optic.
Date: March 12, 2010
Creator: McClinton, Brittany & Naulleau, Patrick
Partner: UNT Libraries Government Documents Department

Mask roughness and its implications for LER at the 22- and 16-nm nodes

Description: Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both mask-absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.
Date: February 16, 2010
Creator: Naulleau, Patrick; George, Simi A. & McClinton, Brittany M.
Partner: UNT Libraries Government Documents Department

Simplified models for mask roughness induced LER

Description: The ITRS requires < 1.2nm line-edge roughness (LER) for the 22nm half-pitch node. Currently, we can consistently achieve only about 3nm LER. Further progress requires understanding the principle causes of LER. Much work has already been done on how both the resist and LER on the mask effect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and factor into LER limits. Presently, mask-roughness induced LER is studied via full 2D aerial image modeling and subsequent analysis of the resulting image. This method is time consuming and cumbersome. It is, therefore, the goal of this research to develop a useful 'rule-of-thumb' analytic model for mask roughness induced LER to expedite learning and understanding.
Date: February 21, 2011
Creator: McClinton, Brittany & Naulleau, Patrick
Partner: UNT Libraries Government Documents Department

Absorber height effects on SWA restrictions and 'Shadow' LER

Description: As extreme-ultraviolet lithography (EUVL) approaches introduction at the 22-nm half-pitch node, several key aspects of absorber height effects remain unexplored. In particular, sidewall angle (SWA) restrictions based on the height of the mask absorber has not yet been clearly defined. In addition, the effects of absorber height on line-edge roughness (LER) from shadowing has not been examined. We make an initial investigation into how tight SWA constraints are and the extent to which shadow LER alters basic LER. Our approach to SWA aims to find SWA restrictions based on 10% of the total CD error budget (10% of CD). Thus, we allot the SWA budget a {+-}0.2nm tolerance for 22nm half-pitch. New with EUVL is the off-axis illumination system. One potential pitfall that must be carefully monitored is the effect of mask absorber height blocking light from reaching, and therefore, correctly detecting, the base edge position of a feature. While mask features can correctly compensate sizing to target at the wafer, the effects of this shadowing on LER have not yet been investigated. Specifically, shadow LER may exacerbate or mitigate the inherent LER on the mask. Shadowing may also cause a difference in the observed LER on the right and left side of the features. We carefully probe this issue for a range of spatial frequencies. We do rigorous aerial image modeling of mask features with a nominal SWA of 80 degrees and correctly sized to target 22nm features measured at the top, 70nm TaN absorber on a 40 bilayer ML mirror with a 2.5nm Ru cap. Simulations were on a 4X system with an ideal pupil of NA = 0.32, illumination wavelength 13.4nm at 6{sup o} off-axis, and disk source shape with partial coherence factor of {sigma} = 0.50. We first implement a defocus offset to the aerial image ...
Date: February 21, 2011
Creator: McClinton, Brittany & Naulleau, Patrick
Partner: UNT Libraries Government Documents Department

LER control and mitigation: mask roughness induced LER

Description: In the push towards commercialization of extreme-ultraviolet lithography (EUVL), meeting the stringent requirements for line-edge roughness (LER) is increasingly challenging. For the 22-nm half-pitch node and below, the ITRS requires under 1.2 nm LER. Much of this LER is thought to arise from three significant contributors: LER on the mask absorber pattern, LER from the resist, and LER from mask roughness induced speckle. The physical mechanism behind the last contributor is becoming clearer, but how it is affected by the presence of aberrations is less well understood. Here, we conduct a full 2D aerial image simulation analysis of aberrations sensitivities of mask roughness induced LER for the first 37 fringe zernikes. These results serve as a guideline for future LER aberrations control. In examining how to mitigate mask roughness induced LER, we next consider an alternate illumination scheme whereby a traditional dipole's angular spectrum is extended in the direction parallel to the line-and-space mask absorber pattern to represent a 'strip'. While this illumination surprisingly provides merely minimal improvement to the LER as several alternate illumination schemes, overall imaging quality in terms of ILS, NILS, and contrast is improved. While the 22-nm half-pitch node can tolerate significant aberrations from a mask roughness induced LER perspective, total aberration levels for the 16-nm half-pitch node need to be strictly capped at 0.25nm rms to meet the ITRS guidelines. An individual aberrations study for the first 37 fringe zernikes on the 16-nm half-pitch node at the 0.25nm rms level reveals a sensitivity to various forms of spherical aberrations (Z9 & Z25) and quadrafoil (Z28) in particular, under conventional crosspole illumination ({sigma} = 0.10). Compared to conventional dipole or crosspole illuminations, an extended dipole 'strip' illumination scheme offers a way to mitigate mask roughness induced LER, while still maintaining high imaging quality for critical mask ...
Date: February 21, 2011
Creator: McClinton, Brittany & Naulleau, Patrick
Partner: UNT Libraries Government Documents Department

Mask roughness induced LER control and mitigation: aberrations sensitivity study and alternate illumination scheme

Description: Here we conduct a mask-roughness-induced line-edge-roughness (LER) aberrations sensitivity study both as a random distribution amongst the first 16 Fringe Zernikes (for overall aberration levels of 0.25, 0.50, and 0.75nm rms) as well as an individual aberrations sensitivity matrix over the first 37 Fringe Zernikes. Full 2D aerial image modeling for an imaging system with NA = 0.32 was done for both the 22-nm and 16-nm half-pitch nodes on a rough mask with a replicated surface roughness (RSR) of 100 pm and a correlation length of 32 nm at the nominal extreme-ultraviolet lithography (EUVL) wavelength of 13.5nm. As the ideal RSR value for commercialization of EUVL is 50 pm and under, and furthermore as has been shown elsewhere, a correlation length of 32 nm of roughness on the mask sits on the peak LER value for an NA = 0.32 imaging optic, these mask roughness values and consequently the aberration sensitivity study presented here, represent a worst-case scenario. The illumination conditions were chosen based on the possible candidates for the 22-nm and 16-nm half-pitch nodes, respectively. In the 22-nm case, a disk illumination setting of {sigma} = 0.50 was used, and for the 16-nm case, crosspole illumination with {sigma} = 0.10 at an optimum offset of dx = 0 and dy = .67 in sigma space. In examining how to mitigate mask roughness induced LER, we considered an alternate illumination scheme whereby a traditional dipole's angular spectrum is extended in the direction parallel to the line-and-space mask absorber pattern to represent a 'strip'. While this illumination surprisingly provides minimal improvement to the LER as compared to several alternate illumination schemes, the overall imaging quality in terms of image-log-slope (ILS) and contrast is improved.
Date: March 11, 2011
Creator: McClinton, Brittany M. & Naulleau, Patrick P.
Partner: UNT Libraries Government Documents Department

Mask roughness induced LER: geometric model at long correlation lengths

Description: Collective understanding of how both the resist and line-edge roughness (LER) on the mask affect the final printed LER has made significant advances. What is poorly understood, however, is the extent to which mask surface roughness couples to image plane LER as a function of illumination conditions, NA, and defocus. Recently, progress has been made in formulating a simplified solution for mask roughness induced LER. Here, we investigate the LER behavior at long correlation lengths of surface roughness on the mask. We find that for correlation lengths greater than 3/NA in wafer dimensions and CDs greater than approximately 0.75/NA, the previously described simplified model, which remains based on physical optics, converges to a 'geometric regime' which is based on ray optics and is independent of partial coherence. In this 'geometric regime', the LER is proportional to the mask slope error as it propagates through focus, and provides a faster alternative to calculating LER in contrast to either full 2D aerial image simulation modeling or the newly proposed physical optics model. Data is presented for both an NA = 0.32 and an NA = 0.5 imaging system for CDs of 22-nm and 50-nm horizontal-line-dense structures.
Date: February 11, 2011
Creator: McClinton, Brittany M. & Naulleau, Patrick P.
Partner: UNT Libraries Government Documents Department

Critical challenges for EUV resist materials

Description: Although Extreme ultraviolet lithography (EUVL) is now well into the commercialization phase, critical challenges remain in the development of EUV resist materials. The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements. Although several materials have met the resolution requirements, LER and sensitivity remain a challenge. As we move beyond the 22-nm node, however, even resolution remains a significant challenge. Chemically amplified resists have yet to demonstrate the required resolution at any speed or LER for 16-nm half pitch and below. Going to non-chemically amplified resists, however, 16-nm resolution has been achieved with a LER of 2 nm but a sensitivity of only 70 mJ/cm{sup 2}.
Date: February 28, 2011
Creator: Naulleau, Patrick P.; Anderson, Christopher N.; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A. et al.
Partner: UNT Libraries Government Documents Department

The SEMATECH Berkeley microfield exposure tool: learning a the 22-nm node and beyond

Description: Microfield exposure tools (METs) continue to playa dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the SEMATECH Berkeley 0.3-NA MET operating as a SEMATECH resist and mask test center. Here we present an update summarizing the latest resist test and characterization results. The relatively small numerical aperture and limited illumination settings expected from 1st generation EUV production tools make resist resolution a critical issue even at the 32-nm node. In this presentation, sub 22 nm half pitch imaging results of EUV resists are reported. We also present contact hole printing at the 30-nm level. Although resist development has progressed relatively well in the areas of resolution and sensitivity, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of system-level contributors to the LER observed from the SEMA TECH Berkeley microfield tool.
Date: February 16, 2009
Creator: Naulleau, Patrick; Anderson, Christopher; Baclea-an, Lorie-Mae; Denham, Paul; George, Simi; Goldberg, Kenneth A. et al.
Partner: UNT Libraries Government Documents Department