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Electron field emission from undoped and doped DLC films

Description: Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH{sub 4}:H{sub 2} and CH{sub 4}:H{sub 2}:N{sub 2} gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8 % (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10{sup -6} Torr using the diode method with emitter-anode spacing set at 20 {micro}m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V{sub th}) varies in a complex manner with nitrogen content. As a function of nitrogen content, V{sub th} initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp{sup 3} bonded) matrix with graphite-like inclusions.
Date: June 1, 1999
Creator: Chakhovskoi, A G; Evtukh, A A; Felter, T E; Klyui, N I; Kudzinovsky, S Y; Litovchenko, V G et al.
Partner: UNT Libraries Government Documents Department

Electron field emission from undoped and doped DLC films

Description: In this presentation the electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. Undoped and nitrogen doped DLC films were grown by PE CVD from CH{sub 4}:H{sub 2} and CH{sub 4}:H{sub 2}:N{sub 2} gas mixtures, correspondingly. During nitrogen doped DLC film deposition, the nitrogen content in the gas mixture was varied within the range 0 to 45%. In-situ gas-phase doping allowed them to deposit DLC films with different content nitrogen. DLC films were deposited under three different levels of gas pressure in the chamber: 0.2, 0.6 and 0.8 Torr. The measurements of emission current from samples were performed in the vacuum system which could be pumped to a stable pressure of 10{sup {minus}6} Torr. The emission current was measured in the diode structure. The emitter-anode spacing L was constant and equal to 20 {micro}m. The current-voltage characteristics of the Si field electron emission arrays covered with undoped and nitrogen doped DLC films show that at the beginning the threshold voltage (V{sub th}) increases remarkably with nitrogen content, then V{sub th} is observed to decrease and finally V{sub th} increases. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work functions, threshold voltage, field enhancement factors, and effective emission areas. For the qualitative explanation of experimental results, they treat the DLC film as a diamond-like (sp{sup 3}-bonds) matrix with graphite-like inclusions in it.
Date: April 1, 1999
Creator: Chakhovskoi, A G; Evtukhm A A Klyui, N I; Felter, T E; Kudzinocaky, S Y; Litovchenko, V G & Litvin, Y M
Partner: UNT Libraries Government Documents Department