Description: The structure of oxygen-implanted silicon (dose -7.3 x 10/sup 16/cm/sup -2/) has been studied by transmission electron microscopy (TEM). The as-implanted material exhibited four structurally different layers: defect-free monocrystalline silicon, amorphous silicon, monocrystalline silicon with a high defect density, and the perfect crystalline substrate. After heat-pulse annealing for 20 s at 800/sup 0/C, 900/sup 0/C, or 1000/sup 0/C, the amorphous layer recrystallized resulting in polycrystalline silicon rich in oxygen. The uniform insulator buried layer was not formed under these specific implantation and annealing conditions.
Date: October 1, 1985
Creator: Liliental-Weber, Z.; Carpenter, R.W. & Kelly, J.C.
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