Understanding the mechanism of base development of hydrogen silsesquioxane
Description:
There have been numerous studies of electron beam exposed hydrogen silsesquioxane (HSQ) development conditions in order to improve the developer contrast. For TMAH based development, improvements were made by going to higher TMAH normalities and heating the developer. Yang and Berggren showed development of electron beam exposed (HSQ) by NaOH with added Na salts (various anions) significantly improves the contrast. Here, we study the contrast and etching rates of 100 keV exposed HSQ in NaOH in …
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Date:
January 9, 2009
Creator:
Kim, Jihoon; Chao, Weilun; Liang, Xiaogan; Griedel, Brian D. & Olynick, Deirdre L
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