1-MeV-Electron Irradiation of GaInAsN Cells: Preprint
Description:
This conference paper describes the GaInAsN cells that are measured to retain 933% and 894% of their original efficiency after exposure to 5 X 1014 and 1 X 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by< 1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing …
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Date:
May 1, 2002
Creator:
Kurtz, Sarah; King, R. R.; Edmondson, K. M.; Friedman, D. J. & Karam, N. H.
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UNT Libraries Government Documents Department