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Wafer Fusion for Integration of Semiconductor Materials and Devices

Description: We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.
Date: May 1, 1999
Creator: Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M. et al.
Partner: UNT Libraries Government Documents Department