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The Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide

Description: Exfoliation of Sic by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which, when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. Sic thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created by the implant, and physical stresses due to gas-pressure effects during post-implant anneal. Experimental results show that exfoliation of Sic is dependent upon the concentration of implanted hydrogen, but the damage generated by the implant approaches a point when exfoliation is, in fact, retarded. This is attributed to excessive damage at the projected range of the implant which inhibits physical processes of implant-induced cleaving. Damage is controlled independently of hydrogen dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. The resulting decrease in damage is thought to promote growth of micro-cracks which form a continuous cleave. Channeled H{sup +} implantation enhances the cleaving process while simultaneously minimizing residual damage within the separated film. It is shown that high-temperature irradiation and channeling each reduces the hydrogen fluence required to affect separation of a thin film and results in a lower concentration of defects. This increases the potential for producing SiC01 which is sufficiently free of defects and, thus, more easily electrically activated.
Date: April 5, 1999
Creator: Gregory, R.B.; Holland, O.W.; Thomas, D.K.; Wetteroth, T.A. & Wilson, S.R.
Partner: UNT Libraries Government Documents Department

Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

Description: Heavy Ion Backscattering Spectrometry (HIBS) is a new IBA tool for measuring extremely low levels of surface contamination on very pure substrates, such as Si wafers used in the manufacture of integrated circuits. HIBS derives its high sensitivity through the use of moderately low energy ({approximately} 100 keV) heavy ions (e.g., C{sup 12}) to boost the RBS cross-section to levels approaching 1,000 barns, and by using specially designed time-of-flight detectors which have been optimized to provide a large scattering solid angle with minimal kinematic broadening. A HIBS User Facility has been created which provides US industry, national laboratories, and universities with a place for conducting ultra-trace level surface contamination studies. A review of the HIBS technique is given and examples of using the facility to calibrate Total-Reflection X-ray Fluorescence Spectroscopy (TXRF) instruments and develop wafer cleaning processes are discussed.
Date: December 1, 1997
Creator: Banks, J.C.; Doyle, B.L.; Knapp, J.A.; Werho, D.; Gregory, R.B.; Anthony, M. et al.
Partner: UNT Libraries Government Documents Department