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Actinic imaging of native and programmed defects on a full-field mask

Description: We describe the imaging and characterization of native defects on a full field extreme ultraviolet (EUV) mask, using several reticle and wafer inspection modes. Mask defect images recorded with the SEMA TECH Berkeley Actinic Inspection Tool (AIT), an EUV-wavelength (13.4 nm) actinic microscope, are compared with mask and printed-wafer images collected with scanning electron microscopy (SEM) and deep ultraviolet (DUV) inspection tools. We observed that defects that appear to be opaque in the SEM can be highly transparent to EUV light, and inversely, defects that are mostly transparent to the SEM can be highly opaque to EUV. The nature and composition of these defects, whether they appear on the top surface, within the multilayer coating, or on the substrate as buried bumps or pits, influences both their significance when printed, and their detectability with the available techniques. Actinic inspection quantitatively predicts the characteristics of printed defect images in ways that may not be possible with non-EUV techniques. As a quantitative example, we investigate the main structural characteristics of a buried pit defect based on EUV through-focus imaging.
Date: March 12, 2010
Creator: Mochi, I.; Goldberg, K. A.; Fontaine, B. La; Tchikoulaeva, A. & Holfeld, C.
Partner: UNT Libraries Government Documents Department

Photon flux requirements for EUV reticle imaging microscopy in the 22 and 16 nm nodes

Description: EUV-wavelength actinic microscopy yields detailed information about EUV mask patterns, architectures, defects, and the performance of defect repair strategies, without the complications of photoresist imaging. The measured aerial image intensity profiles provide valuable feedback to improve mask and lithography system modeling methods. In order to understand the photon-flux-dependent pattern measurement limits of EUV mask-imaging microscopy, we have investigated the effects of shot noise on aerial image linewidth measurements for lines in the 22 and 16-nm generations. Using a simple model of image formation near the resolution limit, we probe the influence of photon shot noise on the measured, apparent line roughness. With this methodology, we arrive at general flux density requirements independent of the specific EUV microscope configurations. Analytical and statistical analysis of aerial image simulations in the 22 and 16-nm generations reveal the trade-offs between photon energy density (controllable with exposure time), effective pixel dimension on the CCO (controlled by the microscope's magnification ratio), and image log slope (ILS). We find that shot-noise-induced linewidth roughness (LWR) varies imersely with the square root of the photon energy density, and is proportional to the imaging magnification ratio. While high magnification is necessary for adequate spatial resolution, for a given flux density, higher magnification ratios have diminishing benefits. With practical imaging parameters, we find that in order to achieve an LWR (3{sigma}) value of 5% of linewidth for dense, 88-nm mask features with 80% aerial image contrast and 13.5-nm effective pixel width (1000x magnification ratio), a peak photon flux of approximately 1400 photons per pixel per exposure is required.
Date: March 12, 2010
Creator: Wintz, D.; Goldberg, K. A.; Mochi, I. & Huh, S.
Partner: UNT Libraries Government Documents Department

Improving the performance of the actinic inspection tool with an optimized alignment procedure

Description: Extreme ultraviolet (EUV) microscopy is an important tool for the investigation of the performance of EUV masks, for detecting the presence and the characteristics of defects, and for evaluating the effectiveness of defect repair techniques. Aerial image measurement bypasses the difficulties inherent to photoresist imaging and enables high data collection speed and flexibility. It provides reliable and quick feedback for the development of masks and lithography system modeling methods. We operate the SEMATECH Berkeley Actinic Inspection Tool (AIT), a EUV microscope installed at the Advanced Light Source at Lawrence Berkeley National Laboratory. The AIT is equipped with several high-magnification Fresnel zoneplate lenses, with various numerical aperture values, that enable it image the reflective mask surface with various resolution and magnification settings. Although the AIT has undergone significant recent improvements in terms of imaging resolution and illumination uniformity, there is still room for improvement. In the AIT, an off-axis zoneplate lens collects the light coming from the sample and an image of the sample is projected onto an EUV-sensitive CCD camera. The simplicity of the optical system is particularly helpful considering that the AIT alignment has to be performed every time that a sample or a zoneplate is replaced. The alignment is sensitive to several parameters such as the lens position and orientation, the illumination direction and the sample characteristics. Since the AIT works in high vacuum, there is no direct access to the optics or to the sample during the alignment and the measurements. For all these reasons the alignment procedures and feedback can be complex, and in some cases can reduce the overall data throughput of the system. In this paper we review the main strategies and procedures that have been developed for quick and reliable alignments, and we describe the performance improvements we have achieved, in terms of ...
Date: March 4, 2009
Creator: Mochi, I.; Goldberg, K.A.; Naulleau, P. & Huh, Sungmin
Partner: UNT Libraries Government Documents Department

A 3-D numerical study of pinhole diffraction to predict the accuracy of EUV point diffraction interferometry

Description: A 3-D electromagnetic field simulation is used to model the propagation of extreme ultraviolet (EUV), 13-nm, light through sub-1500 {Angstrom} dia pinholes in a highly absorptive medium. Deviations of the diffracted wavefront phase from an ideal sphere are studied within 0.1 numerical aperture, to predict the accuracy of EUV point diffraction interferometersused in at-wavelength testing of nearly diffraction-limited EUV optical systems. Aberration magnitudes are studied for various 3-D pinhole models, including cylindrical and conical pinhole bores.
Date: December 1, 1995
Creator: Goldberg, K.A.; Tejnil, E. & Bokor, J.
Partner: UNT Libraries Government Documents Department

EUV-multilayers on grating-like topographies

Description: In this study, multilayer morphology near the key anomalies in grating-like structures, namely sharp step-edges and steep walls, are examined. Different deposition schemes are employed. Based on cross section TEM analysis an explanatory model describing the morphology of the successive layers is developed. A further insight into the periodicity and the general performance of the multilayer is obtained by EUV microscopy. The main distortions in multilayer structure and hence EUV performance are found to be restricted to a region within a few hundred nanometers from the anomalies, which is very small compared to the proposed grating period (50-100 {micro}m). These multilayer coated blazed gratings can thus be considered a viable option for spectral purity enhancement of EUV light sources.
Date: March 12, 2010
Creator: van Boogaard, A. J. R.; Louis, E.; Goldberg, K. A.; Mochi, I. & Bijkerk, F.
Partner: UNT Libraries Government Documents Department

EUV pattern defect detection sensitivity based on aerial image linewidth measurements

Description: As the quality of EUV-wavelength mask inspection microscopes improves over time, the image properties and intensity profiles of reflected light can be evaluated in ever-greater detail. The SEMATECH Berkeley Actinic Inspection Tool (AIT) is one such microscope, featuring mask resolution values that match or exceed those available through lithographic printing in current photoresists. In order to evaluate the defect detection sensitivity of the AIT for dense line patterns on typical masks, the authors study the line width roughness (LWR) on two masks, as measured in the EUV images. They report the through-focus and pitch dependence of contrast, image log slope, linewidth, and LWR. The AIT currently reaches LWR 3{sigma} values close to 9 nm for 175 nm half-pitch lines. This value is below 10% linewidth for nearly all lines routinely measured in the AIT. Evidence suggests that this lower level may arise from the mask's inherent pattern roughness. While the sensitivity limit of the AlT has not yet been established, it is clear that the AIT has the required sensitivity to detect defects that cause 10% linewidth changes in line sizes of 125 nm and larger.
Date: February 12, 2010
Creator: Goldberg, K. A.; Mochi, I.; Naulleau, P.; Liang, T.; Yan, P.-Y. & Huh, S.
Partner: UNT Libraries Government Documents Department

Extreme ultraviolet interferometry

Description: EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical dimension and smaller. In order to achieve diffraction-limited performance, all-reflective multilayer-coated lithographic imaging systems operating near 13-nm wavelength and 0.1 NA have system wavefront tolerances of 0.27 nm, or 0.02 waves RMS. Owing to the highly-sensitive resonant reflective properties of multilayer mirrors and extraordinarily tight tolerances set forth for their fabrication, EUV optical systems require at-wavelength EUV interferometry for final alignment and qualification. This dissertation discusses the development and successful implementation of high-accuracy EUV interferometric techniques. Proof-of-principle experiments with a prototype EUV point-diffraction interferometer for the measurement of Fresnel zoneplate lenses first demonstrated sub-wavelength EUV interferometric capability. These experiments spurred the development of the superior phase-shifting point-diffraction interferometer (PS/PDI), which has been implemented for the testing of an all-reflective lithographic-quality EUV optical system. Both systems rely on pinhole diffraction to produce spherical reference wavefronts in a common-path geometry. Extensive experiments demonstrate EUV wavefront-measuring precision beyond 0.02 waves RMS. EUV imaging experiments provide verification of the high-accuracy of the point-diffraction principle, and demonstrate the utility of the measurements in successfully predicting imaging performance. Complementary to the experimental research, several areas of theoretical investigation related to the novel PS/PDI system are presented. First-principles electromagnetic field simulations of pinhole diffraction are conducted to ascertain the upper limits of measurement accuracy and to guide selection of the pinhole diameter. Investigations of the relative merits of different PS/PDI configurations accompany a general study of the most significant sources of systematic measurement errors. To overcome a variety of experimental difficulties, several new methods in interferogram analysis and phase-retrieval were developed: the Fourier-Transform Method of Phase-Shift Determination, which uses Fourier-domain analysis to improve the accuracy of phase-shifting interferometry; the Fourier-Transform Guided Unwrap Method, which was developed to overcome difficulties associated with a high ...
Date: December 1, 1997
Creator: Goldberg, K.A.
Partner: UNT Libraries Government Documents Department

Particle removal challenges with EUV patterned mask for the sub-22nm HP node

Description: The particle removal efficiency (PRE) of cleaning processes diminishes whenever the minimum defect size for a specific technology node becomes smaller. For the sub-22 nm half-pitch (HP) node, it was demonstrated that exposure to high power megasonic up to 200 W/cm{sup 2} did not damage 60 nm wide TaBN absorber lines corresponding to the 16 nm HP node on wafer. An ammonium hydroxide mixture and megasonics removes {ge}50 nm SiO{sub 2} particles with a very high PRE, A sulfuric acid hydrogen peroxide mixture (SPM) in addition to ammonium hydroxide mixture (APM) and megasonic is required to remove {ge}28 nm SiO{sub 2} particles with a high PRE. Time-of-flight secondary ion mass spectroscopy (TOFSIMS) studies show that the presence of O{sub 2} during a vacuum ultraviolet (VUV) ({lambda} = 172 nm) surface conditioning step will result in both surface oxidation and Ru removal, which drastically reduce extreme ultraviolet (EUV) mask life time under multiple cleanings. New EUV mask cleaning processes show negligible or no EUV reflectivity loss and no increase in surface roughness after up to 15 cleaning cycles. Reviewing of defect with a high current density scanning electron microscope (SEM) drastically reduces PRE and deforms SiO{sub 2} particles. 28 nm SiO{sub 2} particles on EUV masks age very fast and will deform over time, Care must be taken when reviewing EUV mask defects by SEM. Potentially new particles should be identified to calibrate short wavelength inspection tools, Based on actinic image review, 50 nm SiO{sub 2} particles on top of the EUV mask will be printed on the wafer.
Date: March 12, 2010
Creator: Rastegar, A.; Eichenlaub, S.; Kadaksham, A. J.; Lee, B.; House, M.; Huh, S. et al.
Partner: UNT Libraries Government Documents Department

Characterization of Mo/Si multilayer growth on stepped topographies

Description: Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the stepedge region was studied by cross section transmission electron microscopy. A transition from a continuous- to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum model has been developed to give a detailed description of the height profiles of the individual continuous layers. Complementary optical characterization of the multilayer system using a microscope operating in the extreme ultraviolet wavelength range, revealed that the influence of the step-edge on the planar multilayer structure is restricted to a region within 300 nm from the step-edge.
Date: August 31, 2011
Creator: van den Boogaard, A. J. R.; Louis, E.; Zoethout, E.; Goldberg, K. A. & Bijkerk, F.
Partner: UNT Libraries Government Documents Department

Comparison of fast 3D simulation and actinic inspection for EUV masks with buries defects

Description: Aerial images for isolated defects and the interactions of defects with features are compared between the Actinic Inspection Tool (AIT) at Lawrence Berkeley National Laboratory (LBNL) and the fast EUV simulation program RADICAL. Comparisons between AIT images from August 2007 and RADICAL simulations are used to extract aberrations. At this time astigmatism was the dominant aberration with a value of 0.55 waves RMS. Significant improvements in the imaging performance of the AIT were made between August 2007 and December 2008. A good match will be shown between the most recent AIT images and RADICAL simulations without aberrations. These comparisons will demonstrate that a large defect, in this case 7nm tall on the surface, is still printable even if it is centered under the absorber line. These comparisons also suggest that the minimum defect size is between 1.5nm and 0.8nm surface height because a 1.5nm defect was printable but a 0.8nm was not. Finally, the image of a buried defect near an absorber line through focus will demonstrate an inversion in the effect of the defect from a protrusion of the dark line into the space to a protrusion of the space into the line.
Date: February 23, 2009
Creator: Clifford, C. H.; Wiraatmadja, S.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I. et al.
Partner: UNT Libraries Government Documents Department

Investigation of buried EUV mask defect printability using actinic inspection and fast simulation

Description: The fast simulator RADICAL and the Actinic Inspection Tool (AIT) are used in advance of availability of high volume manufacturing quality exposure tools, resists, and masks to assess the expected defect printability levels in production conditions. AIT images are analyzed to qualitatively demonstrate general trends in defect printability: defects smaller than 0.5nm tall on the multilayer surface can cause an unacceptable critical dimension (CD) change, CD change increases for taller defects, and defect printability varies asymmetrically through focus. RADICAL is used to derive quantitative limits for defect size and demonstrate the effects of focus and illumination for 22nm and 16nm dense lines. For 22nm dense lines at best focus a 0.8nm tall defect causes a 10% CD change. For 16nm lines a 0.4nm tall defect causes a 10% CD change. The CD is shown to be more sensitive to buried defects out of focus, but less sensitive to defects in focus if annular or dipole illumination is used.
Date: June 16, 2009
Creator: Clifford, C. H.; Chan, T. T.; Neureuther, A. R.; Goldberg, K. A.; Mochi, I. & Liang, T.
Partner: UNT Libraries Government Documents Department

A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection

Description: The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. yet link data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63 cm{sup 2}. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.
Date: March 12, 2010
Creator: Huh, S.; Ren, L.; Chan, D.; Wurm, S.; Goldberg, K. A.; Mochi, I. et al.
Partner: UNT Libraries Government Documents Department

Printability and inspectability of programmed pit defects on teh masks in EUV lithography

Description: Printability and inspectability of phase defects in ELlVL mask originated from substrate pit were investigated. For this purpose, PDMs with programmed pits on substrate were fabricated using different ML sources from several suppliers. Simulations with 32-nm HP L/S show that substrate pits with below {approx}20 nm in depth would not be printed on the wafer if they could be smoothed by ML process down to {approx}1 nm in depth on ML surface. Through the investigation of inspectability for programmed pits, minimum pit sizes detected by KLA6xx, AIT, and M7360 depend on ML smoothing performance. Furthermore, printability results for pit defects also correlate with smoothed pit sizes. AIT results for pattemed mask with 32-nm HP L/S represents that minimum printable size of pits could be {approx}28.3 nm of SEVD. In addition, printability of pits became more printable as defocus moves to (-) directions. Consequently, printability of phase defects strongly depends on their locations with respect to those of absorber patterns. This indicates that defect compensation by pattern shift could be a key technique to realize zero printable phase defects in EUVL masks.
Date: March 12, 2010
Creator: Kang, I.-Y.; Seo, H.-S.; Ahn, B.-S.; Lee, D.-G.; Kim, D.; Huh, S. et al.
Partner: UNT Libraries Government Documents Department

Carbon contamination topography analysis of EUV masks

Description: The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.
Date: March 12, 2010
Creator: Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R. et al.
Partner: UNT Libraries Government Documents Department

The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch

Description: Microfield exposure tools (METs) play a crucial role in the development of extreme ultraviolet (EUV) resists and masks, One of these tools is the SEMATECH Berkeley 0.3 numerical aperture (NA) MET, Using conventional illumination this tool is limited to approximately 22-nm half pitch resolution. However, resolution enhancement techniques have been used to push the patterning capabilities of this tool to half pitches of 18 nm and below, This resolution was achieved in a new imageable hard mask which also supports contact printing down to 22 nm with conventional illumination. Along with resolution, line-edge roughness is another crucial hurdle facing EUV resists, Much of the resist LER, however, can be attributed to the mask. We have shown that intenssionally aggressive mask cleaning on an older generation mask causes correlated LER in photoresist to increase from 3.4 nm to 4,0 nm, We have also shown that new generation EUV masks (100 pm of substrate roughness) can achieve correlated LER values of 1.1 nm, a 3x improvement over the correlated LER of older generation EUV masks (230 pm of substrate roughness), Finally, a 0.5-NA MET has been proposed that will address the needs of EUV development at the 16-nm node and beyond, The tool will support an ultimate resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.
Date: March 18, 2010
Creator: Naulleau, P.; Anderson, C. N.; Backlea-an, L.-M.; Chan, D.; Denham, P.; George, S. et al.
Partner: UNT Libraries Government Documents Department

Extreme Ultraviolet Laser-based Table-top Aerial Image Metrology of Lithographic Masks

Description: We report the first at-wavelength line edge roughness measurements of patterned EUV lithography masks realized using a table-top aerial imaging system based on a table-top {lambda}=13.2 laser.
Date: February 10, 2010
Creator: Brizuela, F.; Carbajo, S.; Sakdinawat, A.; Wang, Y.; Alessi, D.; Martz, D. et al.
Partner: UNT Libraries Government Documents Department

Bendable Focusing X-Ray Optics for the ALS and the LCLS/FEL: Design, Metrology, and Performance

Description: We review the recent development of bendable x-ray optics used for focusing of beams of soft and hard x-rays at the Advanced Light Source (ALS) at Lawrence Berkeley National Laboratory and at the Linac Coherent Light Source (LCLS) x-ray free electron laser (FEL) at the Stanford Linear Accelerator Center (SLAC) National Accelerator Laboratory. For simultaneous focusing in the tangential and sagittal directions, two elliptically cylindrical reflecting elements, a Kirkpatrick-Baez (KB) pair, are used. Because fabrication of elliptical surfaces is complicated, the cost of directly fabricated tangential elliptical cylinders is often prohibitive. Moreover, such optics cannot be easily readjusted for use in multiple, different experimental arrangements, e.g. at different focal distances. This is in contrast to flat optics that are simpler to manufacture and easier to measure by conventional interferometry. The tangential figure of a flat substrate is changed by placing torques (couples) at each end. Depending on the applied couples, one can tune the shape close to a desired tangential cylinder, ellipse or parabola. We review the nature of the bending, requirements and approaches to the mechanical design, describe original optical and at-wavelength techniques for optimal tuning of bendable optics and alignment on the beamline, and provide beamline performance of the bendable optics used for sub-micro and nano focusing of soft x-rays.
Date: June 2, 2010
Creator: Yashchuk, V. V.; Yuan, S.; Baker, S.; Bozek, J.; Celestre, R.; Church, M. et al.
Partner: UNT Libraries Government Documents Department

Advances in full field microscopy with table-top soft x-ray lasers

Description: We describe recent advances in the demonstration of table-top full field microscopes that use soft x-ray lasers for illumination. We have achieved wavelength resolution and single shot exposure operation with a very compact 46.9 nm microscope based on a desk-top size capillary discharge laser. This {lambda}-46.9 nm microscope has been used to capture full field images of a variety of nanostructure systems and surfaces. In a separate development we have demonstrated a zone plate microscope that uses {lambda}=13.2 nm laser illumination to image absorption defects in an extreme ultraviolet lithography (EUVL) mask in the same geometry used in a 4x demagnification EUVL stepper. Characterization of the microscope’s transfer function shows it can resolve 55 nm half period patterns. With these capabilities, the {lambda}-13.2 nm microscope is well suited for evaluation of pattern and defect printability of EUVL masks for the 22 nm node.
Date: May 18, 2009
Creator: Menoni, C. S.; Brizuela, F.; Wang, Y.; Brewer, C. A.; Luther, B. M.; Pedaci, F. et al.
Partner: UNT Libraries Government Documents Department

Inspection 13.2 nm table-top full-field microscope

Description: We present results on a table-top microscope that uses an EUV stepper geometry to capture full-field images with a halfpitch spatial resolution of 55 nm. This microscope uses a 13.2 nm wavelength table-top laser for illumination and acquires images of reflective masks with exposures of 20 seconds. These experiments open the path to the realization of high resolution table-top imaging systems for actinic defect characterization.
Date: February 23, 2009
Creator: Brizuela, F.; Wang, Y.; Brewer, C. A.; Pedaci, F.; Chao, W.; Anderson, E. H. et al.
Partner: UNT Libraries Government Documents Department