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Description: We present a class of compact, monolithic, photonic sensors consisting of multiple section edge emitting lasers with functionalized lateral surface coatings for low level detection of chemical or biological agents. Specifically, we discuss 8 {micro}m x 250 {micro}m Pd-coated H{sub 2} sensors and configurations to reduce the minimum detection limit from 138ppm for passive sensors to 1ppm for active sensors. Compared with conventional optical H{sub 2} sensors that use fiber gratings, surface plasmon resonances, or surface reflectance, our sensors offer the advantages of smaller size, wider dynamic range, monolithic integration of laser source and detector, and 2-D scalability to arrays of sensors that are functionalized to detect different agents.
Date: July 5, 2007
Creator: Goddard, L L; Bond, T C; Cole, G D & Behymer, E M
Partner: UNT Libraries Government Documents Department

Photonic MEMS for NIR in-situ

Description: We report on a novel sensing technique combining photonics and microelectromechanical systems (MEMS) for the detection and monitoring of gas emissions for critical environmental, medical, and industrial applications. We discuss how MEMS-tunable vertical-cavity surface-emitting lasers (VCSELs) can be exploited for in-situ detection and NIR spectroscopy of several gases, such as O{sub 2}, N{sub 2}O, CO{sub x}, CH{sub 4}, HF, HCl, etc., with estimated sensitivities between 0.1 and 20 ppm on footprints {approx}10{sup -3} mm{sup 3}. The VCSELs can be electrostatically tuned with a continuous wavelength shift up to 20 nm, allowing for unambiguous NIR signature determination. Selective concentration analysis in heterogeneous gas compositions is enabled, thus paving the way to an integrated optical platform for multiplexed gas identification by bandgap and device engineering. We will discuss here, in particular, our efforts on the development of a 760 nm AlGaAs based tunable VCSEL for O{sub 2} detection.
Date: July 3, 2007
Creator: Bond, T C; Cole, G D; Goddard, L L & Behymer, E
Partner: UNT Libraries Government Documents Department

Rapidly Reconfigurable All-Optical Universal Logic Gates

Description: We present designs and simulations for a highly cascadable, rapidly reconfigurable, all-optical, universal logic gate. We will discuss the gate's expected performance, e.g. speed, fanout, and contrast ratio, as a function of the device layout and biasing conditions. The gate is a three terminal on-chip device that consists of: (1) the input optical port, (2) the gate selection port, and (3) the output optical port. The device can be built monolithically using a standard multiple quantum well graded index separate confinement heterostructure laser configuration. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog electrical or optical signal at the gate selection port. Specifically, the same gate can be selected to execute one of the 2 basic unary operations (NOT or COPY), or one of the 6 binary operations (OR, XOR, AND, NOR, XNOR, or NAND), or one of the many logic operations involving more than two inputs. The speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal modulation speed of a laser, which can be on the order of tens of GHz. The reprogrammable nature of the universal gate offers maximum flexibility and interchangeability for the end user since the entire application of a photonic integrated circuit built from cascaded universal logic gates can be changed simply by adjusting the gate selection port signals.
Date: June 21, 2006
Creator: Goddard, L L; Kallman, J S & Bond, T C
Partner: UNT Libraries Government Documents Department

Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers

Description: In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.
Date: January 3, 2007
Creator: Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S et al.
Partner: UNT Libraries Government Documents Department