2 Matching Results

Search Results

Advanced search parameters have been applied.

in creator/contributor: "Ghislotti, G."

open access

Annealing studies of visible light emission from silicon nanocrystals produced by implantation

The annealing behavior of silicon implanted SiO{sub 2} layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 {degrees}C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 {mu}s - 0.3 ms).

Date: December 31, 1996

Creator: Ghislotti, G.; Nielsen, B. & Di Mauro, L.F.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Characterization of silicon implanted SiO{sub 2} layers using positron annihilation spectroscopy

Silicon implanted thermal SiO{sub 2} layers were studied using depth-resolved positron annihilation spectroscopy (PAS) and transmission electron microscopy (TEM). TEM observations show the presence of silicon nanocrystals (Si{sub nc}) in the region between 200 nm and 200 nm. The defect annealing behavior is studied by means of PAS. For 1000{degrees}C annealed samples at a depth for which Si{sub nc} are observed, a distinctive PAS signal is detected and ascribed to the Si{sub nc}/SiO{sub 2} inte… more

Date: August 1, 1995

Creator: Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K. G.; Szeles, C.; Bottani, C. E. et al.