The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation
Description:
High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of {alpha}-Al{sub 2}O{sub 3}. Thin, two-dimensional multilayered structures have been formed by implanting c-axis and a-axis-oriented single crystals of Al{sub 2}O{sub 3} at room temperature with vanadium (10{sup 17} ions/cm{sup 2} at 300 keV) and oxygen (2 x 10{sup 17} ions/cm{sup 2}, 120 …
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Date:
April 1, 1995
Creator:
Gea, L. A.; Boatner, L. A.; Budai, J. D. & Rankin, J.
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Partner:
UNT Libraries Government Documents Department