Integration of thin film decoupling capacitors
Description:
Thin film decoupling capacitors consisting of submicron thick, sol-gel Pb(Zr,Ti)O{sub 3} layers between Pt electrodes on a Si substrate have recently been developed. Because the capacitor structure needs to be only {approximately}3 {mu}m thick, these devices offer advantages such as decreased package volume and ability to integrate so that interconnect inductance is decreased, which allows faster IC processing rates. To fully utilize these devices, techniques of integrating them onto packages s…
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Date:
October 1, 1994
Creator:
Garino, T.; Dimos, D. & Lockwood, S.
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UNT Libraries Government Documents Department