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X-ray absorption spectroscopy from H-passivated porous Si and oxidized Si nanocrystals

Description: Quantum confinement in nanoscale Si structures is widely believed to be responsible for the visible luminescence observed from anodically etched porous silicon (por-Si), but little is known about the actual size or shape of these structures. Extended x-ray absorption fine structure data from a wide variety of por-Si samples show significantly reduced average Si coordination numbers due to the sizable contribution of surface-coordinated H. (The IUSI ratios, as large as 1.2, were independently co… more
Date: November 1, 1994
Creator: Schuppler, S.; Marcus, M. A. & Friedman, S. L.
Partner: UNT Libraries Government Documents Department
open access

Size, Shape, and Crystallinity of Luminescent Structures in Oxidized Si Nanoclusters and H-Passivated Porous Si

Description: Near-edge and extended x-ray absorption fine structure measurements from a wide variety of H-passivated porous Si samples and oxidized Si nanocrystals, combined with electron microscopy, ir-absorption, {alpha}-recoil, and luminescence emission data, provide a consistent structural picture of the species responsible for the luminescence observed in these systems. For luminescent porous Si samples peaking in the visible region, i. e., {le}700nm, their mass-weighted-average structures are determin… more
Date: November 1, 1994
Creator: Schuppler, S.; Marcus, M. A.; Xie, Y. H.; Harris, T. D.; Brown, W. L.; Chabal, Y. J. et al.
Partner: UNT Libraries Government Documents Department
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