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New Mechanism for Non-Radiative Recombination at Light-Induced Boron-Oxygen Complexes in Silicon

Description: First-principles study of BO2 complex in B-doped Czochralski silicon (Cz-Si) reveals a novel, self-trapping-enhanced carrier recombination mechanism, in sharp contrasts to the standard fixed-level Shockley-Read-Hall theory for carrier recombination. We found that an O2 dimer, distant from any B, would cause only weak carrier recombination under illumination -- only enough to drive its diffusion to find B and form the BO2 complexes. Surprisingly, BO2 and O2 produce nearly identical defect gap st… more
Date: November 1, 2005
Creator: Du, M. H.; Branz, H. M.; Crandall, R. S. & Zhang, S. B.
Partner: UNT Libraries Government Documents Department
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