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MOSFET detector evaluation

Description: From nuclear science symposium; San Francisco, California, USA (14 Nov 1973). Metal-oxide-semiconductor devices have been evaluated as lowenergy (250 eV to 50 keV) x-ray dosimeters. They can be used to measure dosages as low as 1 rad (SiO/sub 2/) to as high as 10/sup 5/ rad (SiO/sub 2/). Their small size and basic simplicity make it possible to form arrays of dosimeters for x-ray imaging. When compared to thermoluminescent dosimeters (TLD's), photographic film, and thermopiles, MOSFET dosimeters offer distinct advantages in terms of their small size, their sensitivity to photon energies below 10 keV, and their adaptability to an electrical readout system. (auth)
Date: October 30, 1973
Creator: Ciarlo, D.R.
Partner: UNT Libraries Government Documents Department

Micromachined Fabry-Perot interferometric pressure sensor for automotive combustion engine

Description: In this paper, the authors report a dynamic cylinder pressure sensor for automotive combustion engine. The pressure is sensed by measuring the pressure-induced deflection of a membrane via a Fabry-Perot optical interferometric effect. The sensor is micromachined on a silicon wafer to minimize the cost and the size and to enhance the device quality in high-volume production mode. As a preliminary test, they measured the pressure of an air compressor using the micromachined miniature sensor.
Date: September 1, 1994
Creator: Lee, S.B.; Yu, C.M.; Ciarlo, D.R. & Sheem, S.K.
Partner: UNT Libraries Government Documents Department

A practical microgripper by fine alignment, eutectic bonding and SMA actuation

Description: A silicon microgripper with a large gripping force, a relatively rigid structural body, and flexibility in functional design is presented. The actuation is generated by Ni-Ti-Cu shape memory alloy (SMA) films and the stress induced can deflect each side of the microgripper up to 55 {mu}m for a total gripping motion of 110 {mu}m. When fully open, the force exerted by the film corresponds to a 40 mN gripping force on the tip of the gripper.
Date: April 21, 1995
Creator: Lee, A. P.; Ciarlo, D. R. & Krulevitch, P. A.
Partner: UNT Libraries Government Documents Department

High-temperature, radiation-tolerant electronics for the MMW (Multi-megawatt) Space Reactor Program

Description: One of the objectives of the Multi-Megawatt (MMW) space reactor program is to determine, within the next five years, what types of power electronic devices would be suitable for MMW space power applications. Suitable devices must be able to withstand high temperatures and high radiation fields. After investigating the literature on solid state device and miniature vacuum tube technologies, we have concluded that the miniature vacuum tube technology is, currently, the most promising. The main reason for choosing this technology, is because miniature vacuum tubes can operate at very high temperatures (775 K or potentially higher) and are tolerant to very high neutron fluence and gamma dose. Although there are still problems to be solved before miniature vacuum tubes can be used, the time required for their development will be much shorter than the five year period required by the MMW space reactor program. 13 refs., 3 figs., 3 tabs.
Date: October 17, 1986
Creator: Yee, J.H.; Orvis, W.J.; McConaghy, C. & Ciarlo, D.R.
Partner: UNT Libraries Government Documents Department