Description: From nuclear science symposium; San Francisco, California, USA (14 Nov 1973). Metal-oxide-semiconductor devices have been evaluated as lowenergy (250 eV to 50 keV) x-ray dosimeters. They can be used to measure dosages as low as 1 rad (SiO/sub 2/) to as high as 10/sup 5/ rad (SiO/sub 2/). Their small size and basic simplicity make it possible to form arrays of dosimeters for x-ray imaging. When compared to thermoluminescent dosimeters (TLD's), photographic film, and thermopiles, MOSFET dosimeters offer distinct advantages in terms of their small size, their sensitivity to photon energies below 10 keV, and their adaptability to an electrical readout system. (auth)
Date: October 30, 1973
Creator: Ciarlo, D.R.
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