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in creator/contributor: "BOUANANI,M.E."

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Ion Beam Induced Charge Collection (IBICC) Studies of Integrated Circuits Using a 10MeV Carbon Microbeam

As feature sizes of Integrated Circuits (ICs) continue to shrinlL the sensitivity of these devices, particularly SRAMS and DR4Ms, to natural radiation is increasing. The radiation can lead to the uncontrolled deposition of charge within an IC, which ean alter, for example, the memoty state of a bit and thereby produce what is edled a `SOW error, or Single Event Upset (SEU). The response of ICS to natural background radiation is therefore of great coneem regarding the reliability of Mure devices… more

Date: September 29, 1998

Creator: Aton, T.J.; Bouanani, M. E.; Doyle, B.L.; Duggan, J.L.; Guo, B.N.; McDaniel, F.D. et al.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Microbeam Studies of Diffusion Time Resolved Ion Beam Induced Charge Collection from Stripe-Like Junctions

To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accurate models of ionizing radiation induced charge collection dynamics within microcircuits. A new technique, Diffusion Time Resolved Ion Beam Induced Charge Collection (DTRIBICC), is proposed to measure the average arrival time of the diffused charge at the junction. Specially designed stripe-like junctions were experimentally studied using a 12 MeV carbon microbeam with a spot size of 1 {micro}m.… more

Date: June 14, 2000

Creator: Guo, B. N.; Bouanani, M. E.; Renfrow, S. N.; Walsh, David S.; Doyle, Barney L.; Aton, T. J. et al.