Electronic structure of diamond, zincblende, and chalcopyrite semiconductors
Description:
ABS>Thesis. The dependence of energy band structure and electronic charge density on pseudopotential parameters is investigated for: InSb, InAs, InP, GaP, Si, ZnGeP/sub 2/, and ZnGeAs/sub 2/. (DLC)
Date:
January 1, 1973
Creator:
de Alvarez, C.V.
Partner:
UNT Libraries Government Documents Department