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Wet Oxidation of High-Al-Content III-V Semiconductors: Important Materials Considerations for Device Applications

Description: Wet oxidation of high-Al-content AIGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation of high-Al-content AlGaAs semiconductor layers in vertical cavity surface emitting lasers (VCSELS) has produced devices with record low threshold currents and voltages and with wall-plug efficiencies greater than 50%. Wet oxidation of buried AlGaAs layers has been employed to reduce the problems associated with substrate current leakage in GaAs-on- insulator (GOI) MESFETS. Wet oxidation has also been considered as a route to the long-sought goal of a IH-V MIS technology. To continue improving device designs for even higher performance and to establish a truly manufacturable technology based on wet oxidation, the effect of oxidation of a given layer on the properties of the entire device structure must be understood. The oxidation of a given layer can strongly affect the electrical and chemical properties of adjacent layers. Many of these effects are derived from the production of large amounts of elemental As during the oxidation reaction, the resultant generation of point defects, and the diffusion of these defects into adjacent regions. This can modify the chemical and electrical properties of these regions in ways that can impact device design, fabrication, and performance. Current understanding of the problem is discussed here.
Date: May 19, 1999
Creator: Ashby, Carol I.H.
Partner: UNT Libraries Government Documents Department

Rapid Ultrasensitive Chemical-Fingerprint Detection of Chemical and Biochemical Warfare Agents

Description: Vibrational spectra can serve as chemical fingerprints for positive identification of chemical and biological warfare molecules. The required speed and sensitivity might be achieved with surface-enhanced Raman spectroscopy (SERS) using nanotextured metal surfaces. Systematic and reproducible methods for preparing metallic surfaces that maximize sensitivity have not been previously developed. This work sought to develop methods for forming high-efficiency metallic nanostructures that can be integrated with either gas or liquid-phase chem-lab-on-a-chip separation columns to provide a highly sensitive, highly selective microanalytical system for detecting current and future chem/bio agents. In addition, improved protein microchromatographic systems have been made by the creation of acrylate-based porous polymer monoliths that can serve as protein preconcentrators to reduce the optical system sensitivity required to detect and identify a particular protein, such as a bacterial toxin.
Date: December 1, 2002
Creator: ASHBY, CAROL I.; SHEPODD, TIMOTHY J.; YELTON, WILLIAM G. & MURON, DAVID J.
Partner: UNT Libraries Government Documents Department

Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

Description: The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 10{sup 9}/cm{sup 2}. Such high dislocation densities degrade both the electronic and photonic properties of the material. The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy (CE), which employs prepatterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is prepatterned with narrow lines and etched to a depth that permits coalescence of laterally growing III-N nucleated on the mesa surfaces before vertical growth fills the etched trench. Low dislocation densities typical of epitaxial lateral overgrowth (ELO) are obtained in the cantilever regions and the TD density is also reduced up to 1 micrometer from the edge of the support regions.
Date: July 31, 2000
Creator: ASHBY,CAROL I.; WILLAN,CHRISTINE C.; HAN,JUNG; MISSERT,NANCY A.; PROVENCIO,PAULA P.; FOLLSTAEDT,DAVID M. et al.
Partner: UNT Libraries Government Documents Department

Agile dry etching of compound semiconductors for science-based manufacturing using in-situ process control

Description: In-situ optical diagnostics and ion beam diagnostics for plasma-etch and reactive-ion-beam etch (RIBE) tools have been developed and implemented on etch tools in the Compound Semiconductor Research Laboratory (CSRL). The optical diagnostics provide real-time end-point detection during plasma etching of complex thin-film layered structures that require precision etching to stop on a particular layer in the structure. The Monoetch real-time display and analysis program developed with this LDRD displays raw and filtered reflectance signals that enable an etch system operator to stop an etch at the desired depth within the desired layer. The ion beam diagnostics developed with this LDRD will permit routine analysis of critical ion-beam profile characteristics that determine etch uniformity and reproducibility on the RIBE tool.
Date: February 1, 2000
Creator: ASHBY,CAROL I.; VAWTER,GREGORY A.; BREILAND,WILLIAM G.; BRUSKAS,LARRY A.; WOODWORTH,JOSEPH R. & HEBNER,GREGORY A.
Partner: UNT Libraries Government Documents Department

Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities

Description: A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.
Date: August 9, 1999
Creator: Ashby, Carol I.H.; Baca, Albert G.; Chang, P.-C; Hafich, M.J.; Hammons, B.E. & Zavadil, Kevin R.
Partner: UNT Libraries Government Documents Department

Selective Oxidation Technology and its Applications Toward Electronic and Optoelectronic Devices

Description: Selective oxidation of AlGaAs compounds has facilitated dramatic improvements in the performance of near IR VCSELS. Under the auspices of this proposal we have: (1) expanded our understanding of both the strengths and the limitations of this technology; (2) explored its applicability to other Al bearing materials; (3) utilized this technology base to demonstrate a variety of new electronic and optoelectronic devices; and (4) established the reliability and manufacturability of oxidized devices such as VCSELS. Specifically, we have investigated conditions required to maximize control of the oxidation process as well as those required to facilitate inhibit etching of the resultant oxide. Concurrently, studies were performed to extend the technology to other Al-bearing compounds such as Al(Ga)AsSb, InAl(Ga)P and Al(Ga)N. Several new devices utilizing the selective oxidation technology of AlGaAs, as well as Al(Ga)AsSb were be considered. On a separate front, we also explored the possibility of using oxidized AlGaAs and InAl(Ga)P to form GaAs/AIGaAs FETs. Finally, reliability and manufacturability issues of the high performance VCSELS fabricated using selective oxidation technology, were addressed.
Date: July 1, 1999
Creator: Spahn, Olga B.; Allerman, Andrew A.; Choquette, Kent D.; Vawter, Gregory A.; Klem, John F.; Sullivan, Charles T. et al.
Partner: UNT Libraries Government Documents Department

Amorphous Diamond MEMS and Sensors

Description: This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater than one order of magnitude increase in chemical sensitivity is expected through the ...
Date: June 1, 2002
Creator: SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J. et al.
Partner: UNT Libraries Government Documents Department