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Anisotropy of conduction electrons in n-InSb and extrinsic and intrinsic properties of HgCdTe

Description: The anistropy of the orbital and spin properties of conduction electrons in InSb has been measured simultaneously using a cyclotron-resonance type experiment. This represents the first time that the anistropy of effective mass in InSb has been directly measured using an optical method.
Date: August 1991
Creator: Yoon, Im T. (Im Taek)
Partner: UNT Libraries
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Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors

Description: The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power.
Date: December 1975
Creator: Rater, Lonnie M.
Partner: UNT Libraries
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Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon

Description: The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the d… more
Date: December 2014
Creator: Shrestha, Kiran (Engineer)
Partner: UNT Libraries
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