Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors
Description:
AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a {sup 137}Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 MRad are reported. Results about the effect of radiation on the noise from a FOXFET biased detec…
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Date:
February 1, 1992
Creator:
Laakso, M. (Fermi National Accelerator Lab., Batavia, IL (United States) Helsinki Univ. (Finland). Dept. of High Energy Physics); Singh, P.; Engels, E. Jr. & Shepard, P. (Pittsburgh Univ., PA (United States). Dept. of Physics and Astronomy)
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