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Inkjet-printed MoS₂-based field-effect transistors with graphene and hexagonal boron nitride inks

This article reports the design, fabrication, and characterization of an all inkjet-printed field-effect transistor (FET).

Date: July 10, 2020

Creator: Hossain, Ridwan F. & Kaul, Anupama

Item Type: Article

Partner: UNT College of Engineering

open access

Probing Noise in Flux Qubits via Macroscopic Resonant Tunneling

Article on the characterization of noise in a flux qubit using macroscopic resonant tunneling between the two lowest lying states of a bistable rf SQUID. Analysis of these results indicates that the dominant source of low energy flux noise in this device is a quantum mechanical environment in thermal equilibrium.

Date: September 10, 2008

Creator: Harris, R.; Johnson, M. W.; Han, S.; Berkley, A. J.; Johansson, J.; Bunyk, P. et al.