AlGaN Materials Engineering for Integrated Multi-Function Systems
Description:
This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have bee…
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Date:
January 1, 2001
Creator:
HAN, JUNG; MITCHELL, CHRISTINE C.; WALDRIP, KAREN NMN; GUILINGER, TERRY R.; KELLY, MICHAEL J.; FLEMING, JAMES G. et al.
Partner:
UNT Libraries Government Documents Department