0.5 μm E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant
Description:
A doped-channel heterostructure field effect transistor (H-FET) technology has been developed with self-aligned refractory gate processing and using both enhancement- and depletion-mode transistors. D-HFET devices are obtained with a threshold voltage adjust implant into material designed for E-HFET operation. Both E- and D-HFETs utilize W/WSi bilayer gates, sidewall spacers, and rapid thermal annealing for controlling short channel effects. The 0.5 {mu}m E- HFETs (D-HFETs) have been demonstrat…
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Date:
April 1997
Creator:
Baca, A. G.; Sherwin, M. E.; Zolper, J. C.; Shul, R. J.; Briggs, R. D.; Heise, J. A. et al.
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