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Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films

Description: Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 Torr and the sample temperature at 500° C, the surface was observed to consist of amorphous regions and (2x1) dimer reconstructed regions. After 5 minutes of exposure to atomic hydrogen, the surface was observed to consist mostly of (2x1) dimer reconstructed regions. These observations support a recent model for CVD diamond growth that is based on an amorphous carbon layer that is etched or converted to diamond by atomic hydrogen. With further exposure to atomic hydrogen at 500° C, etch pits were observed in the shape of inverted pyramids with {111} oriented sides. The temperature dependence of atomic hydrogen etching of the diamond (100) surface was also investigated using UHV STM, and it was found that it was highly temperature dependent. Etching with a diamond sample temperature of 200° C produced (100) surfaces that are atomically rough with no large pits, indicating that the hydrogen etch was isotropic at 200° C. Atomic hydrogen etching of the surface with a sample temperature of 500° C produced etch-pits and vacancy islands indicating an anisotropic etch at 500° C. With a sample temperature of 1000° C during the hydrogen etch, the (100) surface was atomically smooth with no pits and few single atomic vacancies, but with vacancy rows predominantly in the direction of the dimer ...
Date: May 2000
Creator: Stallcup, Richard E.

The Stopping of Energetic Si, P and S Ions in Ni, Cu, Ge and GaAs Targets

Description: Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts high demands on the accuracy of range calculations. A theory that predicts stopping powers and ranges for all projectile-target combinations is needed. The most important database used to report the stopping powers is the SRIM/TRIM program developed by Ziegler and coworkers. However, other researchers report that at times, these values differ significantly from experimental values. In this study the stopping powers of Si, P and S ions have been measured in Ni, Cu, Ge and GaAs absorbers in the energy range ~ 2-10 MeV. For elemental films of Ni, Cu and Ge, the stopping of heavy ions was measured using a novel ERD (Elastic Recoil Detection) based technique. In which an elastically recoiled lighter atom is used to indirectly measure the energy of the incoming heavy ion using a surface barrier detector. In this way it was possible to reduce the damage and to improve the FWHM of the detector. The results were compared to SRIM-2000 predictions and other experimental measurements. A new technique derived from Molecular Beam Epitaxy (MBE) was developed to prepare stoichiometric GaAs films on thin carbon films for use in transmission ion beam experiments. The GaAs films were characterized using X-ray Photoelectron Spectroscopy (XPS) and Particle Induced X-ray Emission (PIXE). These films were used to investigate the stopping powers of energetic heavy ions in GaAs and to provide data for the calculation of Bethe-Bloch parameters in the framework of the Modified Bethe-Bloch theory. As a result of this study, stopping power data are available for the first time for Si and P ions ...
Date: December 2001
Creator: Nigam, Mohit

Zinc Oxide Nanoparticles for Nonlinear Bioimaging, Cell Detection and Selective Cell Destruction

Description: Light matter interactions have led to a great part of our current understanding of the universe. When light interacts with matter it affects the properties of both the light and the matter. Visible light, being in the region that the human eye can "see," was one of the first natural phenomenon we used to learn about our universe. The application of fundamental physics research has spilled over into other fields that were traditionally separated from physics, being considered two different sciences. Current physics research has applications in all scientific fields. By taking a more physical approach to problems in fields such as chemistry and biology, we have furthered our knowledge of both. Nanocrystals have many interesting optical properties. Furthermore, the size and properties of nanocrystals has given them applications in materials ranging from solar cells to sunscreens. By understanding and controlling their interactions with systems we can utilize them to increase our knowledge in other fields of science, such as biology. Nanocrystals exhibit optical properties superior to currently used fluorescent dyes. By replacing molecular dyes with nanoparticles we can reduce toxicity, increase resolution and have better cellular targeting abilities. They have also shown to have toxicity to cancer and antibacterial properties. With the understanding of how to target specific cells in vitro as well as in vivo, nanoparticles have the potential to be used as highly cell specific nanodrugs that can aid in the fight against cancer and the more recent fight against antibiotic resistant bacteria. This dissertation includes our work on bioimaging as well as our novel drug delivery system. An explanation of toxicity associated with ZnO nanoparticles and how we can use it and the nonlinear optical properties of ZnO for nanodrugs and nanoprobes is presented.
Date: May 2013
Creator: Urban, Ben E.