Surface Plasmon Based Nanophotonic Optical Emitters
Description:
Group- III nitride based semiconductors have emerged as the leading material for short wavelength optoelectronic devices. The InGaN alloy system forms a continuous and direct bandgap semiconductor spanning ultraviolet (UV) to blue/green wavelengths. An ideal and highly efficient light-emitting device can be designed by enhancing the spontaneous emission rate. This thesis deals with the design and fabrication of a visible light-emitting device using GaN/InGaN single quantum well (SQW) system wit…
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Access:
Restricted to the UNT Community Members at a
UNT Libraries Location.
Date:
December 2005
Creator:
Vemuri, Padma Rekha