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CO₂-Laser Induced Hot Electron Magneto-Transport Effects in n-InSb
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The effects of optical heating via infrared free carrier absorption on the electron magneto-transport properties of n-InSb at helium temperatures have been studied for the first time. Oscillatory photoconductivity (OPC) type structure is seen in the photon energy dependence of the transport properties. A C0₂ laser (hω = 115 to 135 meV) was used as the optical source. Concentrations between 1 x 10¹⁵ cm⁻³ and 2 x 10¹⁶ cm⁻³ were studied. The conclusions of this study are that the energy relaxation of high energy photoexcited electrons, generated by free carrier absorption of C0₂ laser radiation in degenerate n-InSb at liquid helium temperatures, is by emission of a maximum number of optical phonons, and that this relaxation mechanism produces OPC type structure in the photon energy dependence of the electron temperature of the conduction band electron gas. This structure is seen, therefore, in the transport properties of the sample, including the Shubnikovde Haas effect, the effective absorption coefficient, and the photoconductivity (mobility) response (lower concentrations only). In addition, the highest concentration studied, nₑ = ~2 x 10¹⁶ cm⁻³, sets an experimental lower limit on the concentration at which electron-electron scattering will become the dominant energy relaxation mechanism for the photoexcited electrons, since OPC effects were present in this sample.
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Automatic Frequency Control of Microwave Radiation Sources
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Resonant cavity controlled klystron frequency stabilization circuits and quartz-crystal oscillator frequency stabilization circuits were investigated for reflex klystrons operating at frequencies in the X-band range. The crystal oscillator circuit employed achieved better than 2 parts in 10 in frequency stability. A test of the functional properties of the frequency standard was made using the Stark effect in molecules.
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Formation of Supersaturated Alloys by Ion Implantation and Pulsed-Laser Annealing
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Supersaturated substitutional alloys formed by ion implantation and rapid liquid-phase epitaxial regrowth induced by pulsed-laser annealing have been studied using Rutherford-backscattering and ion-channeling analysis. A series of impurities (As, Sb, Bi, Ga, In, Fe, Sn, Cu) have been implanted into single-crystal (001) orientation silicon at doses ranging from 1 x 10^15/cm2 to 1 x 10^17/cm2. The samples were subsequently annealed with a Ω-switched ruby laser (energy density ~1.5 J/cm2, pulse duration 15 x 10-9 sec). Ion-channeling analysis shows that laser annealing incorporates the Group III (Ga, In) and Group V (As, Sb, Bi) impurities into substitutional lattice sites at concentrations far in excess of the equilibrium solid solubility. Channeling measurements indicate the silicon crystal is essentially defect free after laser annealing. The maximum Group III and Group V dopant concentrations that can be incorporated into substitutional lattice sites are determined for the present laser-annealing conditions. Dopant profiles have been measured before and after annealing using Rutherford backscattering. These experimental profiles are compared to theoretical model calculations which incorporate both dopant diffusion in liquid silicon and a distribution coefficient (k') from the liquid. It is seen that a distribution coefficient (k') far greater than the equilibrium value (k0) is required for the calculation to fit the experimental data. In the cases of Fe, Zn, and Cu, laser annealing causes the impurities to segregate toward the surface. After annealing, none of these impurities are observed to be substitutional in detectable concentrations. The systematics of these alloys systems are discussed.