Description: Group III nitrides are efficient light emitters. The modification of internal optoelectronic properties of these materials due to strain, external or internal electric field are an area of interest. Insertion of metal nanoparticles (MNPs) (Ag, Au etc) inside the V-shaped inverted hexagonal pits (IHP) of InGaN/GaN quantum wells (QWs) offers the potential of improving the light emission efficiencies. We have observed redshift and blueshift due to the Au MNPs and Ag MNPs respectively. This shift could be due to the electric field created by the MNPs through electrostatic image charge. We have studied the ultrafast carrier dynamics of carriers in hybrid InGaN/GaN QWs. The change in quantum confinement stark effect due to MNPs plays an important role for slow and fast carrier dynamics. We have also observed the image charge effect on the ultrafast differential transmission measurement due to the MNPs. We have studied the non-linear absorption spectroscopy of these materials. The QWs behave as a discharging of a nanocapacitor for the screening of the piezoelectric field due to the photo-excited carriers. We have separated out screening and excitonic bleaching components from the main differential absorption spectra of InGaN/GaN QWs.
Date: August 2012
Creator: Mahat, Meg Bahadur
Item Type: Thesis or Dissertation