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Chemical and Electronic Structure of Aromatic/Carborane Composite Films by PECVD for Neutron Detection

Description: Boron carbide-aromatic composites, formed by plasma-enhanced co-deposition of carboranes and aromatic precursors, present enhanced electron-hole separation as neutron detector. This is achieved by aromatic coordination to the carborane icosahedra and results in improved neutron detection efficiency. Photoemission (XPS) and FTIR suggest that chemical bonding between B atoms in icosahedra and aromatic contents with preservation of π system during plasma process. XPS, UPS, density functional theory (DFT) calculations, and variable angle spectroscopic ellipsometery (VASE) demonstrate that for orthocarborane/pyridine and orthocarborane/aniline films, states near the valence band maximum are aromatic in character, while states near the conduction band minimum include those of either carborane or aromatic character. Thus, excitation across the band gap results in electrons and holes on carboranes and aromatics, respectively. Further such aromatic-carborane interaction dramatically shrinks the indirect band gap from 3 eV (PECVD orthocarborane) to ~ 1.6 eV (PECVD orthocarborane/pyridine) to ~1.0 eV (PECVD orthocarborane/aniline), with little variation in such properties with aromatic/orthocarborane stoichiometry. The narrowed band gap indicate the potential for greatly enhanced charge generation relative to PECVD orthocarborane films, as confirmed by zero-bias neutron voltaic studies. The results indicate that the enhanced electron-hole separation and band gap narrowing observed for aromatic/orthocarborane films relative to PECVD orthocarborane, has significant potential for a range of applications, including neutron detection, photovoltaics, and photocatalysis. Acknowledgements: This work was supported by the Defense Threat Reduction Agency (Grant No.HDTRA1-14-1-0041). James Hilfiker is also gratefully acknowledged for stimulating discussions.
Date: December 2016
Creator: Dong, Bin

Direct Atomic Level Controlled Growth and Characterization of h-BN and Graphene Heterostructures on Magnetic Substrates for Spintronic Applications

Description: Epitaxial multilayer h-BN(0001) heterostructures and graphene/h-BN heterostructures have many potential applications in spintronics. The use of h-BN and graphene require atomically precise control and azimuthal alignment of the individual layers in the structure. These in turn require fabrication of devices by direct scalable methods rather than physical transfer of BN and graphene flakes, and such scalable methods are also critical for industrially compatible development of 2D devices. The growth of h-BN(0001) multilayers on Co and Ni, and graphene/h-BN(0001) heterostructures on Co have been studied which meet these criteria. Atomic Layer Epitaxy (ALE) of BN was carried out resulting in the formation of macroscopically continuous h-BN(0001) multilayers using BCl3 and NH3 as precursors. X-ray photoemission spectra (XPS) show that the films are stoichiometric with an average film thickness linearly proportional to the number of BCl3/NH3 cycles. Molecular beam epitaxy (MBE) of C yielded few layer graphene in azimuthal registry with BN/Co(0001) substrate. Low energy electron diffraction (LEED) measurements indicate azimuthally oriented growth of both BN and graphene layers in registry with the substrate lattice. Photoemission data indicate B:N atomic ratios of 1:1. Direct growth temperatures of 600 K for BN and 800 to 900 K for graphene MBE indicate multiple integration schemes for applications in spintronics.
Date: August 2016
Creator: Beatty, John D.

Direct Inject Mass Spectrometry for Illicit Chemistry Detection and Characterization

Description: The field of direct inject mass spectrometry includes a massive host of ambient ionization techniques that are especially useful for forensic analysts. Whether the sample is trace amounts of drugs or explosives or bulk amounts of synthetic drugs from a clandestine laboratory, the analysis of forensic evidence requires minimal sample preparation, evidence preservation, and high sensitivity. Direct inject mass spectrometry techniques can rarely provide all of these. Direct analyte-probed nanoextraction coupled to nanospray ionization mass spectrometry, however, is certainly capable of achieving these goals. As a multifaceted tool developed in the Verbeck laboratory, many forensic applications have since been investigated (trace drug and explosives analysis). Direct inject mass spectrometry can also be easily coupled to assays to obtain additional information about the analytes in question. By performing a parallel artificial membrane assay or a cell membrane stationary phase extraction prior to direct infusion of the sample, membrane permeability data and receptor activity data can be obtained in addition to the mass spectral data that was already being collected. This is particularly useful for characterizing illicit drugs and their analogues for a biologically relevant way to schedule new psychoactive substances.
Date: May 2016
Creator: Williams, Kristina

Fundamental Studies of Copper Corrosion in Interconnect Fabrication Process and Spectroscopic Investigation of Low-k Structures

Description: In the first part of this dissertation, copper bimetallic corrosion and its inhibition in cleaning processes involved in interconnect fabrication is explored. In microelectronics fabrication, post chemical mechanical polishing (CMP) cleaning is required to remove organic contaminants and particles left on copper interconnects after the CMP process. Use of cleaning solutions, however, causes serious reliability issues due to corrosion and recession of the interconnects. In this study, different azole compounds are explored and pyrazole is found out to be a potentially superior Cu corrosion inhibitor, compared to the most widely used benzotriazole (BTA), for tetramethyl ammonium hydroxide (TMAH)-based post CMP cleaning solutions at pH 14. Micropattern corrosion screening results and electrochemical impedance spectroscopy (EIS) revealed that 1 mM Pyrazole in 8 wt% TMAH solution inhibits Cu corrosion more effectively than 10 mM benzotriazole (BTA) under same conditions. Moreover, water contact angle measurement results also showed that Pyrazole-treated Cu surfaces are relatively hydrophilic compared to those treated with BTA/TMAH. X-ray photoelectron spectroscopy (XPS) analysis supports Cu-Pyrazole complex formation on the Cu surface. Overall Cu corrosion rate in TMAH-based highly alkaline post CMP cleaning solution is shown to be considerably reduced to less than 1Å/min by addition of 1 mM Pyrazole. In the second part, a novel technique built in-house called multiple internal Reflection Infrared Spectroscopy (MIR-IR) was explored as a characterization tool for characterization of different low-k structures.In leading edge integrated circuit manufacturing, reduction of RC time delay by incorporation of porous ultra low-k interlayer dielectrics into Cu interconnect nanostructure continues to pose major integration challenges. The main challenge is that porous structure renders interlayer dielectrics mechanically weak, chemically unstable and more susceptible to the RIE plasma etching damages. Besides the challenge of handling weak porous ultra low-k materials, a lack of sensitive metrology to guide systematic development of plasma etching, ...
Date: December 2015
Creator: Goswami, Arindom

Determination of Solute Descriptors for Illicit Drugs Using Gas Chromatographic Retention Data and Abraham Solvation Model

Description: In this experiment, more than one hundred volatile organic compounds were analyzed with the gas chromatograph. Six capillary columns ZB wax plus, ZB 35, TR1MS, TR5, TG5MS and TG1301MS with different polarities have been used for separation of compounds and illicit drugs. The Abraham solvation model has five solute descriptors. The solute descriptors are E, S, A, B, L (or V). Based on the six stationary phases, six equations were constructed as a training set for each of the six columns. The six equations served to calculate the solute descriptors for a set of illicit drugs. Drugs studied are nicotine (S= 0.870, A= 0.000, B= 1.073), oxycodone(S= 2.564. A= 0.286, B= 1.706), methamphetamine (S= 0.297, A= 1.570, B= 1.009), heroin (S=2.224, A= 0.000, B= 2.136) and ketamine (S= 1.005, A= 0.000, B= 1.126). The solute property of Abraham solvation model is represented as a logarithm of retention time, thus the logarithm of experimental and calculated retention times is compared.
Date: August 2015
Creator: Mitheo, Yannick K.

A Study of Silver: an Alternative Maldi Matrix for Low Weight Compounds and Mass Spectrometry Imaging

Description: Soft-landing ion mobility has applicability in a variety of areas. The ability to produce material and collect a sufficient amount for further analysis and applications is the key goal of this technique. Soft-landing ion mobility has provided a way to deposit material in a controllable fashion, and can be tailored to specific applications. Changing the conditions at which soft-landing ion mobility occurs effects the characteristics of the resulting particles (size, distribution/coverage on the surface). Longer deposition times generated more material on the surface; however, higher pressures increased material loss due to diffusion. Larger particles were landed when using higher pressures, and increased laser energy at ablation. The utilization of this technique for the deposition of silver clusters has provided a solvent free matrix application technique for MALDI-MS. The low kinetic energy of incident ions along with the solvent free nature of soft-landing ion mobility lead to a technique capable of imaging sensitive samples and low mass analysis. The lack of significant interference as seen by traditional organic matrices is avoided with the use of metallic particles, providing a major enhancement in the ability to analyze low mass compounds by MALDI.
Date: May 2014
Creator: Walton, Barbara Lynn

Experimental Determination of L, Ostwald Solubility Solute Descriptor for Illegal Drugs By Gas Chromatography and Analysis By the Abraham Model

Description: The experiment successfully established the mathematical correlations between the logarithm of retention time of illegal drugs with GC system and the solute descriptor L from the Abraham model. the experiment used the method of Gas Chromatography to analyze the samples of illegal drugs and obtain the retention time of each one. Using the Abraham model to calculate and analyze the sorption coefficient of illegal drugs is an effective way to estimate the drugs. Comparison of the experimental data and calculated data shows that the Abraham linear free energy relationship (LFER) model predicts retention behavior reasonably well for most compounds. It can calculate the solute descriptors of illegal drugs from the retention time of GC system. However, the illegal drugs chosen for this experiment were not all ideal for GC analysis. HPLC is the optimal instrument and will be used for future work. HPLC analysis of the illegal drug compounds will allow for the determination of all the solute descriptors allowing one to predict the illegal drugs behavior in various Abraham biological and medical equations. the results can be applied to predict the properties in biological and medical research which the data is difficult to measure. the Abraham model will predict more accurate results by increasing the samples with effective functional groups.
Date: May 2012
Creator: Wang, Zhouxing

FTIR-ATR Characterization of Hydrogel, Polymer Films, Protein Immobilization and Benzotriazole Adsorption on Copper Surface

Description: Plasma polymerization techniques were used to synthesize and deposit hydrogel on silicon (Si) substrate. Hydrogel is a network of polymer chains that are water-insoluble and has a high degree of flexibility. The various fields of applications of hydrogel include drug release, biosensors and tissue engineering etc. Hydrogel synthesized from different monomers possess a common property of moisture absorption. In this work two monomers were used namely 1-amino-2-propanol (1A2P) and 2(ethylamino)ethanol (2EAE) to produce polymer films deposited on Si ATR crystal. Their moisture uptake property was tested using FTIR-ATR technique. This was evident by the decrease in -OH band in increasing N2 purging time of the films. Secondly, two monomer compounds namely vinyl acetic acid and glycidyl methacrylate which have both amine and carboxylic groups are used as solid surface for the immobilization of bovine serum albumin (BSA). Pulsed plasma polymerization was used to polymerize these monomers with different duty cycles. Initial works in this field were all about protein surface adsorption. But more recently, the emphasis is on covalent bonding of protein on to the surface. This immobilization of protein on solid surface has a lot of applications in the field of biochemical studies. The polymerization of vinyl acetic acid and glycidyl methacrylate were shown as successful method to attach protein on them. Chemical mechanical polishing (CMP) of Cu is one of the processes in the integrated chips manufacturing industry. Benzotriazole is one of the constituents of this CMP slurry used as corrosion inhibitor for Cu. Benzotriazole (C6H5N3) is a nitrogen heterocyclic derivative having three nitrogen atoms, each with an unshared pair of electrons, forming five-membered ring structure. This molecule coordinates with Cu atoms by loosing a proton from one of its nitrogen atom and thereby forming a film which is polymeric in nature that prevents further oxidation of Cu. ...
Date: December 2007
Creator: Pillai, Karthikeyan

Electrodeposition of Copper on Ruthenium Oxides and Bimetallic Corrosion of Copper/Ruthenium in Polyphenolic Antioxidants

Description: Copper (Cu) electrodeposition on ruthenium (Ru) oxides was studied due to important implications in semiconductor industry. Ruthenium, proposed as the copper diffusion barrier/liner material, has higher oxygen affinity to form different oxides. Three different oxides (the native oxide, reversible oxide, and irreversible oxide) were studied. Native oxide can be formed on exposing Ru in atmosphere. The reversible and irreversible oxides can be formed by applying electrochemical potential. Investigation of Cu under potential deposition on these oxides indicates the similarity between native and reversible oxides by its nature of inhibiting Cu deposition. Irreversible oxide formed on Ru surface is rather conductive and interfacial binding between Cu and Ru is greatly enhanced. After deposition, bimetallic corrosion of Cu/Ru in different polyphenols was studied. Polyphenols are widely used as antioxidants in post chemical mechanical planarization (CMP). For this purpose, different trihydroxyl substituted benzenes were used as antioxidants. Ru, with its noble nature enhances bimetallic corrosion of Cu. Gallic acid (3,4,5 - trihydroxybenzoic acid) was chosen as model compound. A mechanism has been proposed and validity of the mechanism was checked with other antioxidants. Results show that understanding the chemical structure of antioxidants is necessary during its course of reaction with Cu.
Date: August 2007
Creator: Venkataraman, Shyam S.

Study of Copper Electrodeposition on Ruthenium Oxide Surfaces and Bimetallic Corrosion of Copper/Ruthenium in Gallic Acid Solution

Description: Ruthenium, proposed as a new candidate of diffusion barrier, has three different kinds of oxides, which are native oxide, electrochemical reversible oxide and electrochemical irreversible oxide. Native oxide was formed by naturally exposed to air. Electrochemical reversible oxide was formed at lower anodic potential region, and irreversible oxides were formed at higher anodic potential region. In this study, we were focusing on the effect of copper electrodeposition on each type of oxides. From decreased charge of anodic stripping peaks and underpotential deposition (UPD) waves in cyclic voltammetry (CV), efficiency of Cu deposition dropped off indicating that interfacial binding strength between Cu and Ru oxides was weakened when the Ru surface was covered with irreversible oxide and native oxide. Also, Cu UPD was hindered by both O2 and H2 plasma modified Ru surfaces because the binding strength between Cu and Ru was weakened by O2 and H2 plasma treatment. Cu/Ru and Cu/Ta bimetallic corrosion was studied for understanding the corrosion behavior between diffusion barrier (Ta and Ru) and Cu interconnects under the post chemical mechanical planarization (CMP) process in semiconductor fabrication. Gallic acid is used in post CMP slurry solution and is known well as antioxidant which is supposed to oxidize itself to prevent other species from oxidizing. However, in this study under the observation of Cu microdot corrosion test, copper was corroded only in gallic acid at specific pH region of alkaline condition which is close to the pH region for post CMP solution formula. With different pH alkaline condition, gallic acid formed different oxidized products which are characterized by cyclic voltammetry and UV-Vis spectroscopy. Therefore, the specific oxidized product from particular pH region condition caused the Cu corrosion. Also, the corrosion rate of Cu microdots was influenced by substrate effect (Cu/Ru and Cu/Ta) and ambient control, which was included ...
Date: August 2007
Creator: Yu, Kyle K.

Study of Substituted Benzenesulfonate-Containing Layered Double Hydroxides and Investigation of the Hexamethylenetetramine Route of LDH Synthesis

Description: Benzenesulfonates, para-substituted with amine, chloride and methyl groups were successfully incorporated into layered double hydroxides of two different compositions, 2:1 Mg-Al LDH and 2:1 Zn-Al LDH. These parent materials were also doped with small amounts of nickel and the differences in the two systems were studied. The hexamethylenetetramine route of layered double hydroxide synthesis was investigated to verify if the mechanism is indeed homogeneous. This included attempting preparation of 2:1 Mg-Al LDH, 2:1 Zn-Al LDH and 2:1 Zn-Cr LDH with two different concentrations of hexamethylenetetramine. The analytical data of the products suggest that the homogeneous precipitation may not be the true mechanism of reaction involved in LDH synthesis by this method.
Date: May 2007
Creator: Ambadapadi, Sriram

Electrochemical Synthesis and Characterization of Inorganic Materials from Aqueous Solutions

Description: The dissertation consists of the following three sections: 1. Hydroxyapatite (HA) coatings. In this work, we deposited HA precursor films from weak basic electrolytic solution (pH= 8-9) via an electrochemical approach; the deposits were changed into crystallite coatings of hydroxyapatite by sintering at specific temperatures (600-800 ºC). The formed coatings were mainly characterized by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). XRD patterns show well-defined peaks of HA when sintered under vacuum conditions. FTIR measurements indicate the existence of hydroxyl groups, which were confirmed by the characteristic intensity of the stretching and bending bands at ~3575 and ~630 cm-1, respectively. The SEM shows an adhesive, crack free morphology for the double-layer coating surface of the samples sintered in a vacuum furnace. 2. Silver/polymer/clay nanocomposites. Silver nanoparticles were prepared in layered clay mineral (montmorillonite)/polymer (PVP: poly (vinyl pyrrolidone)) suspension by an electrochemical approach. The silver particles formed in the bulk suspension were stabilized by the PVP and partially exfoliated clay platelets, which acted as protective colloids to prevent coagulation of silver nanoparticles together. The synthesized silver nanoparticles/montmorillonite/PVP composite was characterized and identified by XRD, SEM, and TEM (transmission electron microscopy) measurements. 3. Ce-doped lead zirconate titanate (PZT) thin films. In this study, we fabricated cerium-doped PZT films (molar ratio of Zr/Ti:: 0.5:0.5) via cathodic electrodeposition on the indium tin oxide ( ITO) coated glass substrate. In the preparation process, the PZT films were modified by adding a small amount of cerium dopants, which led to the formation of Ce-doped PZT films after sintering at high temperatures. The fabricated PZT films on the ITO coated glass substrate may be used as electro-optic devices in the industrial application.
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Date: December 2006
Creator: Yuan, Qiuhua

The synthesis and study of poly(N-isopropylacrylamide)/poly(acrylic acid) interpenetrating polymer network nanoparticle hydrogels.

Description: Homogeneous hydrogels made of an interpenetrating network of poly(N-isopropylacrylamide) (PNIPAm) and poly(acrylic acid) (PAAc) are synthesized by a two-step process; first making PNIPAm hydrogels and then interpenetrating acrylic acid throughout the hydrogel through polymerization. The kinetic growth of the IPN is plotted and an equation is fitted to the data. When diluted to certain concentrations in water, the hydrogels show reversible, inverse thermal gelation at about 34°C. This shows unique application to the medical field, as the transition is just below body temperature. A drug release experiment is performed using high molecular weight dyes, and a phase diagram is created through observation of the purified, concentrated gel at varying concentrations and temperatures.
Date: August 2006
Creator: Crouch, Stephen Wallace

Thermodynamics of the Abraham General Solvation Model: Solubility and Partition Aspects

Description: Experimental mole fraction solubilities of several carboxylic acids (2-methoxybenzoic acid, 4-methoxybenzoic acid, 4-nitrobenzoic acid, 4-chloro-3-nitrobenzoic acid, 2-chloro-5-nitrobenzoic acid,2-methylbenzoic acid and ibuprofen) and 9-fluorenone, thianthrene and xanthene were measured in a wide range of solvents of varying polarity and hydrogen-bonding characteristics. Results of these measurements were used to calculate gas-to-organic solvent and water-to-organic solvent solubility ratios, which were then substituted into known Abraham process partitioning correlations. The molecular solute descriptors that were obtained as the result of these computations described the measured solubility data to within an average absolute deviation of 0.2 log units. The calculated solute descriptors also enable one to estimate many chemically, biologically and pharmaceutically important properties for the ten solutes studied using published mathematical correlations.
Date: August 2006
Creator: Stovall, Dawn Michele

Cu Electrodeposition on Ru with a Chemisorbed Iodine Surface Layer.

Description: An iodine surface layer has been prepared on Ru(poly) and Ru(0001) electrodes by exposure to iodine vapor in UHV and polarizing in a 0.1 M HClO4/0.005 M KI solution, respectively. A saturation coverage of I on a Ru(poly) electrode passivates the Ru surface against significant hydroxide, chemisorbed oxygen or oxide formation during exposure to water vapor over an electrochemical cell in a UHV-electrochemistry transfer system. Immersion of I-Ru(poly) results in greater hydroxide and chemisorbed oxygen formation than water vapor exposure, but an inhibition of surface oxide formation relative that of the unmodified Ru(poly) surface is still observed. Studies with combined electrochemical and XPS techniques show that the iodine surface adlayer remained on top of the surface after cycles of overpotential electrodeposition/dissolution of copper on both Ru(poly) and Ru(0001) electrodes. These results indicate the potential bifunctionality of iodine layer to both passivate the Ru surface in the microelectronic processing and to act as a surfactant for copper electrodeposition. The electrodeposition of Cu on Ru(0001) or polycrystalline Ru was studied using XPS with combined ultrahigh vacuum/electrochemistry methodology (UHV-EC) in 0.1 M HClO4 with Cu(ClO4)2 concentrations ranging from 0.005 M to 0.0005 M, and on polycrystalline Ru in a 0.05M H2SO4/0.005 M CuSO4/0.001 M NaCl solution. The electrochemical data show well-defined cyclic voltammograms (CV) with a Cu underpotential deposition (UPD) peak and overpotential deposition (OPD) peak. XPS spectra of Ru electrodes emersed from perchloric acid solution at cathodic potentials indicate that ClO4- anions dissociate to yield specifically adsorbed Cl and ClOx species. Subsequent Cu deposition results in the formation of a thin, insoluble Cu(II) film with Cu(I) underneath. In contrast, similar deposition on polycrystalline Ru in the sulfuric acid/Cu sulfate solution with NaCl added yields only Cu(0), indicating that the formation of Cu(II) and Cu(I) involves both Cl and perchlorate interactions with the ...
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Date: August 2005
Creator: Lei, Jipu

Metal Oxide Reactions in Complex Environments: High Electric Fields and Pressures above Ultrahigh Vacuum

Description: Metal oxide reactions at metal oxide surfaces or at metal-metal oxide interfaces are of exceptional significance in areas such as catalysis, micro- and nanoelectronics, chemical sensors, and catalysis. Such reactions are frequently complicated by the presence of high electric fields and/or H2O-containing environments. The focus of this research was to understand (1) the iron oxide growth mechanism on Fe(111) at 300 K and 500 K together with the effect of high electric fields on these iron oxide films, and (2) the growth of alumina films on two faces of Ni3Al single crystal and the interaction of the resulting films with water vapor under non-UHV conditions. These studies were conducted with AES, LEED, and STM. XPS was also employed in the second study. Oxidation of Fe(111) at 300 K resulted in the formation of Fe2O3 and Fe3O4. The substrate is uniformly covered with an oxide film with relatively small oxide islands, i.e. 5-15 nm in width. At 500 K, Fe3O4 is the predominant oxide phase formed, and the growth of oxide is not uniform, but occurs as large islands (100 - 300 nm in width) interspersed with patches of uncovered substrate. Under the stress of STM induced high electric fields, dielectric breakdown of the iron oxide films formed at 300 K occurs at a critical bias voltage of 3.8 ± 0.5 V at varying field strengths. No reproducible result was obtained from the high field stress studies of the iron oxide formed at 500 K. Ni3Al(110) and Ni3Al(111) were oxidized at 900 K and 300 K, respectively. Annealing at 1100 K was required to order the alumina films in both cases. The results demonstrate that the structure of the 7 Å alumina films on Ni3Al(110) is k-like, which is in good agreement with the DFT calculations. Al2O3/Ni3Al(111) (γ'-phase) and Al2O3/Ni3Al(110) (κ-phase) ...
Date: August 2005
Creator: Qin, Feili

Process Evaluation and Characterization of Tungsten Nitride as a Diffusion Barrier for Copper Interconnect Technology

Description: The integration of copper (Cu) and dielectric materials has been outlined in the International Technology Roadmap for Semiconductors (ITRS) as a critical goal for future microelectronic devices. A necessity toward achieving this goal is the development of diffusion barriers that resolve the Cu and dielectric incompatibility. The focus of this research examines the potential use of tungsten nitride as a diffusion barrier by characterizing the interfacial properties with Cu and evaluating its process capability for industrial use. Tungsten nitride (β-W2N) development has been carried out using a plasma enhanced chemical vapor deposition (PECVD) technique that utilizes tungsten hexafluoride (WF6), nitrogen (N2), hydrogen (H2), and argon (Ar). Two design of experiments (DOE) were performed to optimize the process with respect to film stoichiometry, resistivity and uniformity across a 200 mm diameter Si wafer. Auger depth profiling showed a 2:1 W:N ratio. X-ray diffraction (XRD) showed a broad peak centered on the β-W2N phase. Film resistivity was 270 mohm-cm and film uniformity < 3 %. The step coverage (film thickness variance) across a structured etched dielectric (SiO2, 0.35 mm, 3:1 aspect ratio) was > 44 %. Secondary ion mass spectroscopy (SIMS) measurements showed good barrier performance for W2N between Cu and SiO2 with no intermixing of the Cu and silicon when annealed to 390o C for 3 hours. Cu nucleation behavior and thermal stability on clean and nitrided tungsten foil (WxN = δ-WN and β-W2N phases) have been characterized by Auger electron spectroscopy (AES) and thermal desorption spectroscopy (TDS) under controlled ultra high vacuum (UHV) conditions. At room temperature, the Auger intensity ratio vs. time plots demonstrates layer by layer Cu growth for the clean tungsten (W) surface and three-dimensional nucleation for the nitride overlayer. Auger intensity ratio vs. temperature measurements for the Cu/W system indicates a stable interface up to 1000 ...
Date: August 2005
Creator: Ekstrom, Bradley Mitsuharu

The Revival of Electrochemistry: Electrochemical Deposition of Metals in Semiconductor Related Research

Description: Adherent Cu films were electrodeposited onto polycrystalline W foils from purged solutions of 0.05 M CuSO4 in H2SO4 supporting electrolyte and 0.025 M CuCO3∙Cu(OH)2 in 0.32 M H3BO3 and corresponding HBF4 supporting electrolyte, both at pH = 1. Films were deposited under constant potential conditions at voltages between -0.6 V and -0.2 V versus Ag/AgCl. All films produced by pulses of 10 s duration were visible to the eye, copper colored, and survived a crude test called "the Scotch tape test", which involves sticking the scotch tape on the sample, then peeling off the tape and observing if the copper film peels off or not. Characterization by scanning electron microscopy (SEM)/energy dispersive X-ray (EDX) and X-ray photon spectroscopy (XPS) confirmed the presence of metallic Cu, with apparent dendritic growth. No sulfur impurity was observable by XPS or EDX. Kinetics measurements indicated that the Cu nucleation process in the sulfuric bath is slower than in the borate bath. In both baths, nucleation kinetics does not correspond to either instantaneous or progressive nucleation. Films deposited from 0.05 M CuSO4/H2SO4 solution at pH > 1 at -0.2 V exhibited poor adhesion and decreased Cu reduction current. In both borate and sulfate baths, small Cu nuclei are observable by SEM upon deposition at higher negative overpotentials, while only large nuclei (~ 1 micron or larger) are observed upon deposition at less negative potentials. Osmium metal has been successfully electrodeposited directly onto p-Si (100) from both Os3+ and Os4+ in both sulfuric and perchloric baths. This electrochemical deposition of osmium metal can provide sufficient amount of osmium which overcome ion beam implantation limitations. The deposited metal can undergo further processing to form osmium silicides, such as Os2Si3, which can be used as optical active materials. The higher osmium concentration results in large deposition currents and ...
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Date: August 2005
Creator: Wang, Chen

Study of Ruthenium and Ruthenium Oxide's Electrochemical Properties and Application as a Copper Diffusion Barrier

Description: As a very promising material of copper diffusion barrier for next generation microelectronics, Ru has already obtained a considerable attention recently. In this dissertation, we investigated ruthenium and ruthenium oxide electrochemical properties and the application as a copper diffusion barrier. Cu under potential deposition (UPD) on the RuOx formed electrochemically was first observed. Strong binding interaction, manifesting by the observed Cu UPD process, exists between Cu and Ru as well as its conductive ruthenium oxide. Since UPD can be conformally formed on the electrode surface, which enable Ru and RuOx has a potential application in the next generation anode. The [Cl-] and pH dependent experiment were conducted, both of them will affect UPD Cu on Ru oxide. We also found the Cu deposition is thermodynamically favored on RuOx formed electrochemically. We have studied the Ru thin film (5nm) as a copper diffusion barrier. It can successfully block Cu diffusion annealed at 300 oC for 10min under vacuum, and fail at 450 oC. We think the silicidation process at the interface between Ru and Si. PVD Cu/Ru/Si and ECP Cu/Ru/Si were compared each other during copper diffusion study. It was observed that ECP Cu is easy to diffuse through Ru barrier. The function of RuOx in diffusion study on Cu/Ru/Si stack was discussed. In pH 5 Cu2+ solution, Ru and Pt electrochemical behavior were investigated. A sharp difference was observed compared to low pH value. The mechanism in pH 5 Cu2+ solution was interpreted. An interesting compound (posnjakite) was obtained during the electrochemical process. An appropriate formation mechanism was proposed. Also Cu2O was formed in the process. We found oxygen reduction reaction is a key factor to cause this phenomenon.
Date: August 2005
Creator: Zhang, Yibin

Chemistry, Detection, and Control of Metals during Silicon Processing

Description: This dissertation focuses on the chemistry, detection, and control of metals and metal contaminants during manufacturing of integrated circuits (ICs) on silicon wafers. Chapter 1 begins with an overview of IC manufacturing, including discussion of the common aqueous cleaning solutions, metallization processes, and analytical techniques that will be investigated in subsequent chapters. Chapter 2 covers initial investigations into the chemistry of the SC2 clean - a mixture of HCl, H2O2, and DI water - especially on the behavior of H2O2 in this solution and the impact of HCl concentration on metal removal from particle addition to silicon oxide surfaces. Chapter 3 includes a more generalized investigation of the chemistry of metal ions in solution and how they react with the silicon oxide surfaces they are brought into contact with, concluding with illumination of the fundamental chemical principles that govern their behavior. Chapter 4 shows how metal contaminants behave on silicon wafers when subjected to the high temperature (≥ 800 °C) thermal cycles that are encountered in IC manufacturing. It demonstrates that knowledge of some fundamental thermodynamic properties of the metals allow accurate prediction of what will happen to a metal during these processes. Chapter 5 covers a very different but related aspect of metal contamination control, which is the effectiveness of metal diffusion barriers (e.g. Ru) in holding a metal of interest, (e.g. Cu), where it is wanted while preventing it from migrating to places where it is not wanted on the silicon wafer. Chapter 6 concludes with an overview of the general chemical principles that have been found to govern the behavior of metals during IC manufacturing processes.
Date: May 2005
Creator: Hurd, Trace Q.

Interfacial Study of Copper Electrodeposition with the Electrochemical Quartz Crystal Microbalance (EQCM)

Description: The electrochemical quartz crystal microbalance (EQCM) has been proven an effective mean of monitoring up to nano-scale mass changes related to electrode potential variations at its surface. The principles of operation are based on the converse piezoelectric response of quartz crystals to mass variations on the crystal surface. In this work, principles and operations of the EQCM and piezo-electrodes are discussed. A conductive oxide, ruthenium oxide (RuO2) is a promising material to be used as a diffusion barrier for metal interconnects. Characterization of copper underpotential deposition (UPD) on ruthenium and RuO2 electrodes by means of electrochemical methods and other spectroscopic methods is presented. Copper electrodeposition in platinum and ruthenium substrates is investigated at pH values higher than zero. In pH=5 solutions, the rise in local pH caused by the reduction of oxygen leads to the formation of a precipitate, characterized as posnjakite or basic copper sulfate by means of X-ray electron spectroscopy and X-ray diffraction. The mechanism of formation is studied by means of the EQCM, presenting this technique as a powerful in-situ sensing device.
Date: May 2005
Creator: Ojeda Mota, Oscar Ulises

Synthesis and study of crystalline hydrogels, guided by a phase diagram.

Description: Monodispersed nanoparticles of poly-N-isopropylacrylamide-co-allylamine (PNIPAM-co-allylamine) and PNIPAM-co-acrylic acid (AA) have been synthesized and used as building blocks for creating three-dimensional networks. The close-packed PNIPAM-co-allylamine and PNIPAM-co-AA nanoparticles were stabilized by covalently bonding neighboring particles at room temperature and at neutral pH; factors which make these networks amicable for drug loading and release. Controlled release studies have been performed on the networks using dextran markers of various molecular weights as model macromolecular drugs. Drug release was quantified under various physical conditions including a range of temperature and molecular weight. These nanoparticle networks have several advantages over the conventional bulk gels for controlling the release of biomolecules with large molecular weights. Monodispersed nanoparticles of poly-N-isopropylacrylamide-co-allylamine (PNIPAM-co-allylamine) can self-assemble into crystals with a lattice spacing on the order of the wavelength of visible light. By initiating the crystallization process near the colloidal crystal melting temperature, while subsequently bonding the PNIPAM-co-allylamine particles below the glass transition temperature, a nanostructured hydrogel has been created. The crystalline hydrogels exhibit iridescent patterns that are tunable by the change of temperature, pH value or even protein concentration. This kind of soft and wet hydrogel with periodic structures may lead to new sensors, devices, and displays operating in aqueous solutions, where most biological and biomedical systems reside. The volume-transition equilibrium and the interaction potential between neutral PINPAM particles dispersed in pure water were investigated by using static and dynamic light-scattering experiments. From the temperature-dependent size and energy parameters, the Sutherland-like potential provides a reasonable representation of the inter-particle potential for PNIPAM particles in swollen and in collapsed phases. An aqueous dispersion of PNIPAM particles can freeze at both high and low temperatures. At low temperatures, the freezing occurs at a large particle volume fraction, similar to that in a hard-sphere system; while at high temperature, the freezing occurs at ...
Date: December 2004
Creator: Huang, Gang

Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration.

Description: The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates at 300 K, followed by annealing to 600 K in 2 torr O2. X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si(2p) binding energy at 102.1 eV and Ta(4f7/2) binding energy at 26.2 eV, indicative of Ta silicate formation. O(1s) spectra indicate that the film is substantially hydroxylated. Annealing the film to > 900 K in UHV resulted in silicate decomposition to SiO2 and Ta2O5. The Ta silicate film is stable in air at 300K. XPS data show that sputter-deposited Cu (300 K) displays conformal growth on Ta silicate surface (TaSiO6) but 3-D growth on the annealed and decomposed silicate surface. Initial Cu/silicate interaction involves Cu charge donation to Ta surface sites, with Cu(I) formation and Ta reduction. The results are similar to those previously reported for air-exposed TaSiN, and indicate that Si-modified Ta barriers should maintain Cu wettability under oxidizing conditions for Cu interconnect applications. XPS has been used to study the reaction of tert-butylimino tris(diethylamino) tantalum (TBTDET) with atomic hydrogen on SiO2 and organosilicate glass (OSG) substrates. The results on both substrates indicate that at 300K, TBTDET partially dissociates, forming Ta-O bonds with some precursor still attached. Subsequent bombardment with atomic hydrogen at 500K results in stoichiometric TaN formation, with a Ta(4f7/2) feature at binding energy 23.2 eV and N(1s) at 396.6 eV, leading to a TaN phase bonded to the substrate by Ta-O interactions. Subsequent depositions of the precursor on the reacted layer on SiO2 and OSG, followed by atomic hydrogen bombardment, result in increased TaN formation. These results indicate that TBTDET and atomic hydrogen may form the basis for a low temperature atomic layer deposition (ALD) process for the formation of ultraconformal TaNx or Ru/TaNx barriers. The interactions ...
Date: December 2004
Creator: Zhao, Xiaopeng

Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films

Description: Semiconductor circuitry feature miniaturization continues in response to Moore 's Law pushing the limits of aluminum and forcing the transition to Cu due to its lower resistivity and electromigration. Copper diffuses into silicon dioxide under thermal and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This study proposes modified amorphous silicon carbon hydrogen (a-Si:C:H) films as possible diffusion barriers and replacements for SiO2 between metal levels, interlevel dielectric (ILD), or between metal lines (IMD), based upon the diffusion inhibition of previous a-Si:C:H species expected lower dielectric constants, acceptable thermal conductivity. Vinyltrimethylsilane (VTMS) precursor was condensed on a titanium substrate at 90 K and bombarded with electron beams to induce crosslinking and form polymerized a-Si:C:H films. Modifications of the films with hydroxyl and nitrogen was accomplished by dosing the condensed VTMS with water or ammonia before electron bombardment producing a-Si:C:H/OH and a-Si:C:H/N and a-Si:C:H/OH/N polymerized films in expectation of developing films that would inhibit copper diffusion and promote Cu adherence, wetting, on the film surface. X-ray Photoelectron Spectroscopy was used to characterize Cu metallization of these a-Si:C:H films. XPS revealed substantial Cu wetting of a-Si:C:H/OH and a-Si:C:H/OH/N films and some wetting of a-Si:C:H/N films, and similar Cu diffusion inhibition to 800 K by all of the a-:S:C:H films. These findings suggest the possible use of a-Si:C:H films as ILD and IMD materials, with the possibility of further tailoring a-Si:C:H films to meet future device requirements.
Date: May 2004
Creator: Pritchett, Merry