Growth and Characterization of β-Iron Disilicide, β-Iron Silicon Germanide, and Osmium Silicides
Description:
The semiconducting silicides offer significant potential for use in optoelectronic devices. Full implementation of the materials, however, requires the ability to tailor the energy gap and band structure to permit the synthesis of heterojunctions. One promising approach is to alloy the silicides with Ge. As part of an investigation into the synthesis of semiconducting silicide heterostructures, a series of β-Fe(Si1−xGex)2 epilayer samples, with nominal alloy content in the range 0 < x < 0.15, h…
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Date:
August 2009
Creator:
Cottier, Ryan James