Broad-band Light Emission From Ion Implanted Silicon Nanocrystals Via Plasmonic and Non-plasmonic Effects for Optoelectronics
Description:
Broad band light emission ranging from the ultraviolet (UV) to the near infrared (NIR) has been observed from silicon nanoparticles fabricated using low energy (30-45 keV) metal and non-metal ion implantation with a fluence of 5*1015 ions/cm2 in crystalline Si(100). It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing resu…
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Date:
December 2012
Creator:
Singh, Akhilesh K.