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Fractional Calculus and Dynamic Approach to Complexity

Description: Fractional calculus enables the possibility of using real number powers or complex number powers of the differentiation operator. The fundamental connection between fractional calculus and subordination processes is explored and affords a physical interpretation for a fractional trajectory, that being an average over an ensemble of stochastic trajectories. With an ensemble average perspective, the explanation of the behavior of fractional chaotic systems changes dramatically. Before now what has been interpreted as intrinsic friction is actually a form of non-Markovian dissipation that automatically arises from adopting the fractional calculus, is shown to be a manifestation of decorrelations between trajectories. Nonlinear Langevin equation describes the mean field of a finite size complex network at criticality. Critical phenomena and temporal complexity are two very important issues of modern nonlinear dynamics and the link between them found by the author can significantly improve the understanding behavior of dynamical systems at criticality. The subject of temporal complexity addresses the challenging and especially helpful in addressing fundamental physical science issues beyond the limits of reductionism.
Date: December 2015
Creator: Beig, Mirza Tanweer Ahmad

Nonlinear and Quantum Optics Near Nanoparticles

Description: We study the behavior of electric fields in and around dielectric and metal nanoparticles, and prepare the ground for their applications to a variety of systems viz. photovoltaics, imaging and detection techniques, and molecular spectroscopy. We exploit the property of nanoparticles being able to focus the radiation field into small regions and study some of the interesting nonlinear, and quantum coherence and interference phenomena near them. The traditional approach to study the nonlinear light-matter interactions involves the use of the slowly varying amplitude approximation (SVAA) as it simplifies the theoretical analysis. However, SVVA cannot be used for systems which are of the order of the wavelength of the light. We use the exact solutions of the Maxwell's equations to obtain the fields created due to metal and dielectric nanoparticles, and study nonlinear and quantum optical phenomena near these nanoparticles. We begin with the theoretical description of the electromagnetic fields created due to the nonlinear wavemixing process, namely, second-order nonlinearity in an nonlinear sphere. The phase-matching condition has been revisited in such particles and we found that it is not satisfied in the sphere. We have suggested a way to obtain optimal conditions for any type and size of material medium. We have also studied the modifications of the electromagnetic fields in a collection of nanoparticles due to strong near field nonlinear interactions using the generalized Mie theory for the case of many particles applicable in photovoltaics (PV). We also consider quantum coherence phenomena such as modification of dark states, stimulated Raman adiabatic passage (STIRAP), optical pumping in $4$-level atoms near nanoparticles by using rotating wave approximation to describe the Hamiltonian of the atomic system. We also considered the behavior of atomic and the averaged atomic polarization in $7$-level atoms near nanoparticles. This could be used as a prototype to study ...
Date: December 2015
Creator: Dhayal, Suman

Variational Calculations of Positronium Scattering with Hydrogen

Description: Positronium-hydrogen (Ps-H) scattering is of interest, as it is a fundamental four-body Coulomb problem. We have investigated low-energy Ps-H scattering below the Ps(n=2) excitation threshold using the Kohn variational method and variants of the method with a trial wavefunction that includes highly correlated Hylleraas-type short-range terms. We give an elegant formalism that combines all Kohn-type variational methods into a single form. Along with this, we have also developed a general formalism for Kohn-type matrix elements that allows us to evaluate arbitrary partial waves with a single codebase. Computational strategies we have developed and use in this work will also be discussed.With these methods, we have computed phase shifts for the first six partial waves for both the singlet and triplet states. The 1S and 1P phase shifts are highly accurate results and could potentially be viewed as benchmark results. Resonance positions and widths for the 1S-, 1P-, 1D-, and 1F-waves have been calculated.We present elastic integrated, elastic differential, and momentum transfer cross sections using all six partial waves and note interesting features of each. We use multiple effective range theories, including several that explicitly take into account the long-range van der Waals interaction, to investigate scattering lengths for the 1,3S and 1,3P partial waves and effective ranges for the 1,3S-wave.
Date: December 2015
Creator: Woods, Denton

Complex Numbers in Quantum Theory

Description: In 1927, Nobel prize winning physicist, E. Schrodinger, in correspondence with Ehrenfest, wrote the following about the new theory: “What is unpleasant here, and indeed directly to be objected to, is the use of complex numbers. Psi is surely fundamentally a real function.” This seemingly simple issue remains unexplained almost ninety years later. In this dissertation I elucidate the physical and theoretical origins of the complex requirement. I identify a freedom/constraint situation encountered by vectors when, employed in accordance with adopted quantum representational methodology, and representing angular momentum states in particular. Complex vectors, quite simply, provide more available adjustable variables than do real vectors. The additional variables relax the constraint situation allowing the theory’s representational program to carry through. This complex number issue, which lies at the deepest foundations of the theory, has implications for important issues located higher in the theory. For example, any unification of the classical and quantum accounts of the settled order of nature, will rest squarely on our ability to account for the introduction of the imaginary unit.
Date: August 2015
Creator: Maynard, Glenn

A Precise Few-nucleon Size Difference by Isotope Shift Measurements of Helium

Description: We perform high precision measurements of an isotope shift between the two stable isotopes of helium. We use laser excitation of the 2^3 S_1-2^3 P_0 transition at 1083 nm in a metastable beam of 3He and 4He atoms. A newly developed tunable laser frequency selector along with our previous electro-optic frequency modulation technique provides extremely reliable, adaptable, and precise frequency and intensity control. The intensity control contributes negligibly to overall experimental uncertainty by stabilizing the intensity of the required sideband and eliminating the unwanted frequencies generated during the modulation of 1083 nm laser carrier frequency. The selection technique uses a MEMS based fiber switch and several temperature stabilized narrow band (~3 GHz) fiber gratings. A fiber based optical circulator and an inline fiber amplifier provide the desired isolation and the net gain for the selected frequency. Also rapid (~2 sec.) alternating measurements of the 2^3 S_1-2^3 P_0 interval for both species of helium is achieved with a custom fiber laser for simultaneous optical pumping. A servo-controlled retro-reflected laser beam eliminates residual Doppler effects during the isotope shift measurement. An improved detection design and software control makes negligible subtle potential biases in the data collection. With these advances, combined with new internal and external consistency checks, we are able to obtain results consistent with the best previous measurements, but with substantially improved precision. Our measurement of the 2^3 S_1-2^3 P_0 isotope shift between 3He and 4He is 31 097 535.2 (5) kHz. The most recent theoretic calculation combined with this measurement yields a new determination for nuclear size differences between 3He and 4He: ∆r_c=0.292 6 (1)_exp (8)_th (52)_exp fm, with a precision of less than a part in 〖10〗^4 coming from the experimental uncertainty (first parenthesis), and a part in 〖10〗^3 coming from theory. This value is consistent with electron scattering ...
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Date: August 2015
Creator: Hassan Rezaeian, Nima

Synthesis and Characterization of Ion Beam Assisted Silver Nanosystems in Silicon Based Materials for Enhanced Photocurrent Collection Efficiency

Description: In recent years a great deal of interest has been focused on the synthesis of transitional metal (e.g. Ag, Cu, Fe, Au) nanosystems at the surface to sub-surface regions of Si and SiO2 matrices for fundamental understanding of their structures as well as for development of technological applications with enhanced electronic and optical properties. The applications of the metal nanoparticle or nanocluster (NC) systems range from plasmonics, photovoltaic devices, medical, and biosensors. In all of these applications; the size, shape and distribution of the metallic NCs in the silicon matrix play a key role. Low energy ion implantation followed by thermal annealing (in vacuum or gas environment) is one of the most suitable methods for synthesis of NCs at near surfaces to buried layers below the surfaces of the substrates. This technique can provide control over depth and concentration of the implanted ions in the host matrix. The implanted low energy metal ions initially amorphizes the Si substrates while being distributed at a shallow depth near the substrate surface. When subject to thermal annealing, the implanted ions agglomerate to form clusters of different sizes at different depths depending upon the fluence. However, for the heavier ions implanted with high fluences (~1×1016 - 1×1017 atoms/cm2), there lies challenges for accurately predicting the distribution of the implanted ions due to sputtering of the surface as well as redistribution of the implants within the host matrix. In this dissertation, we report the investigation of the saturation of the concentration of the implanted ion species in the depth profiles with low energies (< 80 keV) metal ions (Ag and Au) in Si (100), while studying the dynamic changes during the ion implantation. Multiple low energies (30-80 keV) Ag ions with different fluences were sequentially implanted into commercially available Si wafers in order to facilitate ...
Date: May 2015
Creator: Dhoubhadel, Mangal S.

Analysis of Biological Materials Using a Nuclear Microprobe

Description: The use of nuclear microprobe techniques including: Particle induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS) for elemental analysis and quantitative elemental imaging of biological samples is especially useful in biological and biomedical research because of its high sensitivity for physiologically important trace elements or toxic heavy metals. The nuclear microprobe of the Ion Beam Modification and Analysis Laboratory (IBMAL) has been used to study the enhancement in metal uptake of two different plants. The roots of corn (Zea mays) have been analyzed to study the enhancement of iron uptake by adding Fe (II) or Fe (III) of different concentrations to the germinating medium of the seeds. The Fe uptake enhancement effect produced by lacing the germinating medium with carbon nanotubes has also been investigated. The aim of this investigation is to ensure not only high crop yield but also Fe-rich food products especially from calcareous soil which covers 30% of world’s agricultural land. The result will help reduce iron deficiency anemia, which has been identified as the leading nutritional disorder especially in developing countries by the World Health Organization. For the second plant, Mexican marigold (Tagetes erecta), the effect of an arbuscular mycorrhizal fungi (Glomus intraradices) for the improvement of lead-phytoremediation of lead contaminated soil has been investigated. Phytoremediation provides an environmentally safe technique of removing toxic heavy metals (like lead), which can find their way into human food, from lands contaminated by human activities like mining or by natural disasters like earthquakes. The roots of Mexican marigold have been analyzed to study the role of arbuscular mycorrhizal fungi in enhancement of lead uptake from the contaminated rhizosphere.
Date: December 2014
Creator: Mulware, Stephen Juma

Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon

Description: The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and the carrier hopping depends on energy. However, at lower temperatures, the coulomb interaction between charge carriers becomes important and Efros-Shklosvkii variable hopping (ES-VRH) conduction, where p=1/2, must be included to describe the total conductivity. To correlate changes in electrical conductivity to changes in the local crystalline order, the transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of growth temperature, boron, and hydrogen incorporation. With an increase of hydrogen and/or growth temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of short range order. It is seen that there is a direct correlation between the electrical conductivity and changes in the short and mid-range order resulting from the passivation of defects by hydrogen and the creation of trap states by boron. This work was done under the ARO grant W911NF-10-1-0410, William W. Clark Program Manager. The samples were provided by L-3 Communications.
Date: December 2014
Creator: Shrestha, Kiran (Engineer)

Interaction of Plasmons and Excitons for Low-Dimension Semiconductors

Description: The effects of surface plasmon for InGaN/GaN multi-quantum wells and ZnO nanoparticles optical linear and nonlinear emission efficiency had been experimentally studied. Due to the critical design for InGaN MQWs with inverted hexagonal pits based on GaN, both contribution of surface plasmon effect and image charge effect at resonant and off resonant frequencies were experimentally and theoretically investigated. With off- resonant condition, the InGaN MQWs emission significantly enhanced by metal nanoparticles. This enhancement was caused by the image charge effect, due to the accumulation of carriers to NPs region. When InGaN emission resonated with metal particles SP modes, surface Plasmon effect dominated the emission process. We also studied the surface plasmon effect for ZnO nanoparticles nonlinear optical processes, SHG and TPE. Defect level emission had more contribution at high incident intensity. Emissions are different for pumping deep into the bulk and near surface. A new assumption to increase the TPE efficiency was studied. We thought by using Au nanorods localized surface plasmon mode to couple the ZnO virtual state, the virtual state’s life time would be longer and experimentally lead the emission enhancement. We studied the TPE phenomena at high and near band gap energy. Both emission intensity and decay time results support our assumption. Theoretically, the carriers dynamic mechanism need further studies.
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Date: December 2014
Creator: Lin, Jie (physicist)

Sputtering of Bi and Preferential Sputtering of an Inhomogeneous Alloy

Description: Angular distributions and total yields of atoms sputtered from bismuth targets by normally incident 10 keV -50 keV Ne+ and Ar+ ions have been measured both experimentally and by computer simulation. Polycrystalline Bi targets were used for experimental measurements. The sputtered atoms were collected on high purity aluminum foils under ultra-high vacuum conditions, and were subsequently analyzed using Rutherford backscattering spectroscopy. The Monte-Carlo based SRIM code was employed to simulate angular distributions of sputtered Bi atoms and total sputtering yields of Bi to compare with experiment. The measured sputtering yields were found to increase with increasing projectile energy for normally incident 10 keV - 50 keV Ne+ and Ar+ ions. The shapes of the angular distributions of sputtered Bi atoms demonstrated good agreement between experiment and simulation in the present study. The measured and simulated angular distributions of sputtered Bi exhibited an over-cosine tendency. The measured value of the degree of this over-cosine nature was observed to increase with increasing incident Ne+ ion energy, but was not strongly dependent on incident Ar+ ion energy. The differential angular sputtering yield and partial sputtering yields due to Ar ion bombardment of an inhomogeneous liquid Bi:Ga alloy have been investigated, both experimentally and by computer simulation. Normally incident 25 keV and 50 keV beams of Ar+ were used to sputter a target of 99.8 at% Ga and 0.2 at% Bi held at 40° C in ultra-high vacuum (UHV), under which conditions the alloy is known to exhibit extreme Gibbsian surface segregation that produces essentially a monolayer of Bi atop the bulk liquid. Angular distributions of sputtered neutrals and partial sputtering yields obtained from the conversion of areal densities of Bi and Ga atoms on collector foils were determined. The Monte-Carlo based SRIM code was employed to simulate the experiment and obtain the angular ...
Date: December 2014
Creator: Deoli, Naresh T.

Studies of Charged Particle Dynamics for Antihydrogen Synthesis

Description: Synthesis and capture of antihydrogen in controlled laboratory conditions will enable precise studies of neutral antimatter. The work presented deals with some of the physics pertinent to manipulating charged antiparticles in order to create neutral antimatter, and may be applicable to other scenarios of plasma confinement and charged particle interaction. The topics covered include the electrostatic confinement of a reflecting ion beam and the transverse confinement of an ion beam in a purely electrostatic configuration; the charge sign effect on the Coulomb logarithm for a two component (e.g., antihydrogen) plasma in a Penning trap as well as the collisional scattering for binary Coulomb interactions that are cut off at a distance different than the Debye length; and the formation of magnetobound positronium and protonium.
Date: December 2014
Creator: Correa, Jose Ricardo

Enhancements of Mechanical, Thermal Stability, and Tribological Properties by Addition of Functionalized Reduced Graphene Oxide in Epoxy

Description: The effects of octadecylamine-functionalized reduced graphene oxide (FRGO) on the frictional and wear properties of diglycidylether of bisphenol-A (DGEBA) epoxy are studied using a pin-on-disk tribometer. It was observed that the addition of FRGO significantly improves the tribological, mechanical, and thermal properties of epoxy matrix. Graphene oxide (GO) was functionalized with octadecylamine (ODA), and then reduction of oxygen-containing functional groups was carried out using hydrazine monohydrate. The Raman and x-ray photoelectron spectroscopy studies confirm significant reduction in oxygen-containing functional groups and formation of ODA functionalized reduced GO. The nanocomposites are prepared by adding 0.1, 0.2, 0.5 and 1.0 wt % of FRGO to the epoxy. The addition of FRGO increases by more than an order of magnitude the sliding distance during which the dynamic friction is ≤ 0.1. After this distance, the friction sharply increases to the range of 0.4 - 0.5. We explain the increase in sliding distance during which the friction is low by formation of a transfer film from the nanocomposite to the counterface. The wear rates in the low and high friction regimes are approximately 1.5 x 10-4 mm3/N·m and 5.5 x 10-4 mm3/N·m, respectively. The nanocomposites exhibit a 74 % increase in Young’s modulus with 0.5 wt. % of FRGO, and an increase in glass transition and thermal degradation temperatures.
Date: August 2014
Creator: Shah, Rakesh K.

Highly Efficient Single Frequency Blue Laser Generation by Second Harmonic Generation of Infrared Lasers Using Quasi Phase Matching in Periodically Poled Ferroelectric Crystals

Description: Performance and reliability of solid state laser diodes in the IR region exceeds those in the visible and UV part of the light spectrum. Single frequency visible and UV laser diodes with higher than 500 mW power are not available commercially. However we successfully stabilized a multi-longitudinal mode IR laser to 860 mW single frequency. This means high efficiency harmonic generation using this laser can produce visible and UV laser light not available otherwise. In this study we examined three major leading nonlinear crystals: PPMgO:SLN, PPKTP and PPMgO:SLT to generate blue light by second harmonic generation. We achieved record high net conversion efficiencies 81.3% using PPMgO:SLT (~500 mW out), and 81.1% using PPKTP (~700 mW out). In both these cases an external resonance buildup cavity was used. We also studied a less complicated single pass waveguide configuration (guided waist size of ~ 5 um compared to ~60 um) to generate blue. With PPMgO:SLN we obtained net 40.4% and using PPKT net 6.8% (110mW and 10.1 mW respectively).
Date: August 2014
Creator: Khademian, Ali

Temporal Complexity and Stochastic Central Limit Theorem

Description: Complex processes whose evolution in time rests on the occurrence of a large and random number of intermittent events are the systems under study. The mean time distance between two consecutive events is infinite, thereby violating the ergodic condition and activating at the same time a stochastic central limit theorem that explains why the Mittag-Leffler function is a universal property of nature. The time evolution of these complex systems is properly generated by means of fractional differential equations, thus leading to the interpretation of fractional trajectories as the average over many random trajectories, each of which fits the stochastic central limit theorem and the condition for the Mittag-Leffler universality. Additionally, the effect of noise on the generation of the Mittag-Leffler function is discussed. Fluctuations of relatively weak intensity can conceal the asymptotic inverse power law behavior of the Mittag-Leffler function, providing a reason why stretched exponentials are frequently found in nature. These results afford a more unified picture of complexity resting on the Mittag-Leffler function and encompassing the standard inverse power law definition.
Date: August 2014
Creator: Pramukkul, Pensri

The Effects of Residual Gases on the Field Emission Properties of ZnO, GaN, ZnS Nanostructures, and the Effects of Light on the Resistivity of Graphene

Description: In this dissertation, I present that at a vacuum of 3×10-7 Torr, residual O2, CO2, H2 and Ar exposure do not significantly degrade the field emission (FE) properties of ZnO nanorods, but N2 exposure significantly does. I propose that this could be due to the dissociation of N2 into atomic nitrogen species and the reaction of such species with ZnO. I also present the effects of O2, CO2, H2O, N2, H2, and Ar residual gas exposure on the FE properties of GaN and ZnS nanostructure. A brief review of growth of ZnO, GaN and ZnS is provided. In addition, Cs deposition on GaN nanostructures at ultra-high vacuum results in 30% decrease in turn-on voltage and 60% in work function. The improvement in FE properties could be due to a Cs-induced space-charge layer at the surface that reduces the barrier for FE and lowers the work function. I describe a new phenomenon, in which the resistivity of CVD-grown graphene increases to a higher saturated value under light exposure, and depends on the wavelength of the light—the shorter the wavelength, the higher the resistivity. First-principle calculations and theoretical analysis based on density functional theory show that (1) a water molecule close to a graphene defect is easier to be split than that of the case of no defect existing and (2) there are a series of meta-stable partially disassociated states for an interfacial water molecule. Calculated disassociation energies are from 2.5 eV to 4.6 eV, that match the experimental observation range of light wavelength from visible to 254 nm UV light under which the resistivity of CVD-grown graphene is increased.
Date: May 2014
Creator: Mo, Yudong

An Electro- Magneto-static Field for Confinement of Charged Particle Beams and Plasmas

Description: A system is presented that is capable of confining an ion beam or plasma within a region that is essentially free of applied fields. An Artificially Structured Boundary (ASB) produces a spatially periodic set of magnetic field cusps that provides charged particle confinement. Electrostatic plugging of the magnetic field cusps enhances confinement. An ASB that has a small spatial period, compared to the dimensions of a confined plasma, generates electro- magneto-static fields with a short range. An ASB-lined volume thus constructed creates an effectively field free region near its center. It is assumed that a non-neutral plasma confined within such a volume relaxes to a Maxwell-Boltzmann distribution. Space charge based confinement of a second species of charged particles is envisioned, where the second species is confined by the space charge of the first non-neutral plasma species. An electron plasma confined within an ASB-lined volume can potentially provide confinement of a positive ion beam or positive ion plasma. Experimental as well as computational results are presented in which a plasma or charged particle beam interact with the electro- magneto-static fields generated by an ASB. A theoretical model is analyzed and solved via self-consistent computational methods to determine the behavior and equilibrium conditions of a relaxed plasma. The equilibrium conditions of a relaxed two species plasma are also computed. In such a scenario, space charge based electrostatic confinement is predicted to occur where a second plasma species is confined by the space charge of the first plasma species. An experimental apparatus with cylindrical symmetry that has its interior surface lined with an ASB is presented. This system was developed by using a simulation of the electro- magneto-static fields present within the trap to guide mechanical design. The construction of the full experimental apparatus is discussed. Experimental results that show the characteristics of ...
Date: May 2014
Creator: Pacheco, Josè L.

Electromagnetically Modulated Sonic Structures

Description: Phononic crystals are structures composed of periodically arranged scatterers in a background medium that affect the transmission of elastic waves. They have garnered much interest in recent years for their macro-scale properties that can be modulated by the micro-scale components. The elastic properties of the composite materials, the contrast in the elastic properties of the composite materials, and the material arrangement all directly affect how an elastic wave will behave as it propagates through the sonic structure. The behavior of an elastic wave in a periodic structure is revealed in its transmission bandstructure, and modification of any the elastic parameters will result in tuning of the band structure. In this dissertation, a phononic crystal with properties that can be modulated using electromagnetic radiation, and more specifically, radio-frequency (RF) light will be presented.
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Date: May 2014
Creator: Walker, Ezekiel Lee

How Cooperative Systems Respond to External Forces

Description: Cooperative interactions permeate through nature, bringing about emergent behavior and complexity. Using a simple cooperative model, I illustrate the mean field dynamics that occur at the critical point of a second order phase transition in the framework of Langevin equations. Through this formalism I discuss the response, both linear and nonlinear, to external forces. Emphasis is placed on how information is transferred from one individual to another in order to facilitate the collective response of the cooperative network to a localized perturbation. The results are relevant to a wide variety of systems, ranging from nematic liquid crystals, to flocks and swarms, social groups, and neural networks.
Date: May 2014
Creator: Svenkeson, Adam

Synthesis, Characterization, Structural, and Optical Properties of Zinc Oxide Nanostructures Embedded in Silicon Based Substrates

Description: Structural and optical properties of ZnO nanostructures synthesized by low energy ion implantation technique were examined. ZnO molecular ions were implanted into Si/SiO2 substrates at room temperature and then furnace annealed under different temperatures and environments. In all as-implanted samples only Zn nanostructures with varying diameters distributed into the Si/SiO2 matrices were observed. No trace of ZnO was found. The distributions of Zn nanostructures in Si/SiO2 closely matched results from Stopping and Range of Ions in Matter (SRIM) simulations. During annealing at 750 oC, Zn diffused both toward and away from the surface of the substrate and combine with oxygen to form ZnO nanostructures. At higher annealing temperatures ZnO bonding started to break down and transfer to zinc silicate (Zn2SiO4), and at 900 oC the ZnO was completely converted into Zn2SiO4. The average sizes of Zn/ZnO nanostructures depended on the ion fluence. If the fluence increased the average sizes of nanostructures also increased and vice versa. For room temperature photoluminescence (RT-PL), band-edge emission in the ultraviolet (UV) region was observed from all samples annealed at 700 oC/750 oC and were slightly blue shifted as compare to bulk ZnO. Donor-bound exciton (D,X) and acceptor-bound exciton (A,X) transitions were observed in low temperature photoluminescence (PL). The lifetime of both donor-bound excitonic emission (D, X) and acceptor-bound excitonic emission (A, X) were found to be in the picosecond (ps) range.
Date: May 2014
Creator: Pandey, Bimal

Synthesis Strategies and a Study of Properties of Narrow and Wide Band Gap Nanowires

Description: Various techniques to synthesize nanowires and nanotubes as a function of growth temperature and time were investigated. These include growth of nanowires by a chemical vapor deposition (CVD) system using vapor-liquid-solid (VLS) growth mechanism and electro-chemical synthesis of nanowires and nanotubes. Narrow band gap InSb Eg = 0.17 eV at room temp) nanowires were successively synthesized. Using a phase diagram, the transition of the nanowire from metallic- semiconducting- semi-metallic phase was investigated. A thermodynamic model is developed to show that the occurrence of native defects in InSb nanowires influenced by the nanowire growth kinetics and thermodynamics of defect formation. Wide band gap ZnO (Eg = 3.34 eV) and In2O3 (3.7 eV) were also synthesized. ZnO nanowires and nanotubes were successfully doped with a transition metal Fe, making it a Dilute Magnetic Semiconductor of great technological relevance. Structural and electronic characterizations of nanowires were studied for different semiconducting, metallic and semi-metallic nanowires. Electron transport measurements were used to estimate intrinsic material parameters like carrier concentration and mobility. An efficient gas sensing device using a single In2O3 nanowire was studied and which showed sensitivity to reducing gas like NH3 and oxidizing gas like O2 gas at room temperature. The efficiency of the gas sensing device was found to be sensitive to the nature of contacts as well as the presence of surface states on the nanowire.
Date: May 2014
Creator: Sapkota, Gopal

Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization

Description: Semi-conductor industry relies heavily on silicon (Si). However, Si is not a direct-band gap semi-conductor. Consequently, Si does not possess great versatility for multi-functional applications in comparison with the direct band-gap III-V semi-conductors such as GaAs. To bridge this gap, what is ideally required is a semi-conductor material system that is based on silicon, but has significantly greater versatility. While sparsely studied, the semi-conducting silicides material systems offer great potential. Thus, I focused on the growth and structural characterization of ruthenium silicide and osmium silicide material systems. I also characterized iron silicon germanide films using extended x-ray absorption fine structure (EXAFS) to reveal phase, semi-conducting behavior, and to calculate nearest neighbor distances. The choice of these silicides material systems was due to their theoretically predicted and/or experimentally reported direct band gaps. However, the challenge was the existence of more than one stable phase/stoichiometric ratio of these materials. In order to possess the greatest control over the growth process, molecular beam epitaxy (MBE) has been employed. Structural and film quality comparisons of as-grown versus annealed films of ruthenium silicide are presented. Structural characterization and film quality of MBE grown ruthenium silicide and osmium silicide films via in situ and ex situ techniques have been done using reflection high energy electron diffraction, scanning tunneling microscopy, atomic force microscopy, cross-sectional scanning electron microscopy, x-ray photoelectron spectroscopy, and micro Raman spectroscopy. This is the first attempt, to the best of our knowledge, to grow osmium silicide thin films on Si(100) via the template method and compare it with the regular MBE growth method. The pros and cons of using the MBE template method for osmium silicide growth are discussed, as well as the structural differences of the as-grown versus annealed films. Future perspectives include further studies on other semi-conducting silicides material systems in terms ...
Date: December 2013
Creator: Elmarhoumi, Nader M.

Cooperation-induced Criticality in Neural Networks

Description: The human brain is considered to be the most complex and powerful information-processing device in the known universe. The fundamental concepts behind the physics of complex systems motivate scientists to investigate the human brain as a collective property emerging from the interaction of thousand agents. In this dissertation, I investigate the emergence of cooperation-induced properties in a system of interacting units. I demonstrate that the neural network of my research generates a series of properties such as avalanche distribution in size and duration coinciding with the experimental results on neural networks both in vivo and in vitro. Focusing attention on temporal complexity and fractal index of the system, I discuss how to define an order parameter and phase transition. Criticality is assumed to correspond to the emergence of temporal complexity, interpreted as a manifestation of non-Poisson renewal dynamics. In addition, I study the transmission of information between two networks to confirm the criticality and discuss how the network topology changes over time in the light of Hebbian learning.
Date: August 2013
Creator: Zare, Marzieh

Effects of Quantum Coherence and Interference

Description: Quantum coherence and interference (QCI) is a phenomenon that takes place in all multi-level atomic systems interacting with multiple lasers. In this work QCI is used to create several interesting effects like lasing without inversion (LWI), controlling group velocity of light to extreme values, controlling the direction of propagation through non-linear phase matching condition and for controlling the correlations in field fluctuations. Controlling group velocity of light is very interesting because of many novel applications it can offer. One of the unsolved problems in this area is to achieve a slow and fast light which can be tuned continuously as a function of frequency. We describe a method for creation of tunable slow and fast light by controlling intensity of incident laser fields using QCI effects. Lasers are not new to the modern world but an extreme ultra-violet laser or a x-ray laser is definitely one of the most desirable technologies today. Using QCI, we describe a method to realize lasing at high frequencies by creating lasing without inversion. Role of QCI in creating correlations and anti-correlations, which are generated by vacuum fluctuations, in a three level lambda system coupled to two strong fields is discussed.
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Date: August 2013
Creator: Davuluri, Subrahmanya Bhima Sankar

A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

Description: SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence of low fluence low energy silicon and carbon implantation on the creation of defects in n-type 4H-SiC. The characterization of the defects in these implanted samples was performed using the techniques, RBS-channeling and Raman spectroscopy. We have also utilized these characterization techniques to analyze defects created in much deeper layers of the SiC due to implantation of high energy nitrogen ions. The experimentally determined depths of the Si damage peaks due to low energy (60 keV) Si and C ions with low fluences (< 1015 cm-2) are consistent with the SRIM-2011 simulations. From RBS-C Si sub-lattice measurements for different fluences ...
Date: May 2013
Creator: Kummari, Venkata Chandra Sekhar