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open access

Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films

Description: Semiconductor circuitry feature miniaturization continues in response to Moore 's Law pushing the limits of aluminum and forcing the transition to Cu due to its lower resistivity and electromigration. Copper diffuses into silicon dioxide under thermal and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This stu… more
Date: May 2004
Creator: Pritchett, Merry

Electrodeposition of adherent copper film on unmodified tungsten.

Description: Adherent Cu films were electrodeposited onto polycrystalline W foils from purged solutions of 0.05 M CuSO4 in H2SO4 supporting electrolyte and 0.025 M CuCO3∙Cu(OH)2 in 0.32 M H3BO3 and corresponding HBF4 supporting electrolyte, both at pH = 1. Films were deposited under constant potential conditions at voltages between -0.6 V and -0.2 V vs Ag/AgCl. All films produced by pulses of 10 s duration were visible to the eye, copper colored, and survived a crude test called "the Scotch tape test", … more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: May 2004
Creator: Wang, Chen

Passivation effects of surface iodine layer on tantalum for the electroless copper deposition.

Description: The ability to passivate metallic surfaces under non-UHV conditions is not only of fundamental interests, but also of growing practical importance in catalysis and microelectronics. In this work, the passivation effect of a surface iodine layer on air-exposed Ta for the copper electroless deposition was investigated by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Although the passivation effect was seriously weakened by the prolonged air exposure, iodine passiv… more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: May 2004
Creator: Liu, Jian
open access

Reactivity of Oxide Surfaces and Metal-Oxide Interfaces: Effects of Water Vapor Pressure on Ultrathin Aluminum Oxide Films, and Studies of Platinum Growth Modes on Ultrathin Oxide Films and Their Effects on Adhesion

Description: The reactivity of oxide surfaces and metal-oxide interfaces play an important role in many technological applications such as corrosion, heterogeneous catalysis, and microelectronics. The focus of this research was (1) understanding the effects of water vapor exposure of ultrathin aluminum oxide films under non-ultrahigh vacuum conditions (>10-9 Torr) and (2) characterization of Pt growth modes on ultrathin Ta silicate and silicon dioxide films and the effects of growth modes on adhesion of a … more
Date: May 2004
Creator: Garza, Michelle
open access

Synthesis and study of crystalline hydrogels, guided by a phase diagram.

Description: Monodispersed nanoparticles of poly-N-isopropylacrylamide-co-allylamine (PNIPAM-co-allylamine) and PNIPAM-co-acrylic acid (AA) have been synthesized and used as building blocks for creating three-dimensional networks. The close-packed PNIPAM-co-allylamine and PNIPAM-co-AA nanoparticles were stabilized by covalently bonding neighboring particles at room temperature and at neutral pH; factors which make these networks amicable for drug loading and release. Controlled release studies have been pe… more
Date: December 2004
Creator: Huang, Gang
open access

Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration.

Description: The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates at 300 K, followed by annealing to 600 K in 2 torr O2. X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si(2p) binding energy at 102.1 eV and Ta(4f7/2) binding energy at 26.2 eV, indicative of Ta silicate formation. O(1s) spectra indicate that the film is substantially hydroxylated. Annealing the film to > 900 K in UHV resulted in silicate decomposition to SiO2 and Ta2… more
Date: December 2004
Creator: Zhao, Xiaopeng
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