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Characterization of Iron Oxide Deposits Formed at Comanche Peak Steam Electric Station

Description: The presence of deposits leading to corrosion of the steam generator (SG) systems is a major contributor to operation and maintenance cost of pressurized water reactor (PWR) plants. Formation and transport of corrosion products formed due to the presence of impurities, metallic oxides and cations in the secondary side of the SG units result in formation of deposits. This research deals with the characterization of deposit samples collected from the two SG units (unit 1 and unit 2) at Comanche Peak Steam Electric Station (CPSES). X-ray diffraction (XRD), Fourier transform infrared spectrophotometry (FTIR), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) techniques have been used for studying the compositional and structural properties of iron oxides formed in the secondary side of unit 1 and unit 2. Magnetite (Fe3O4) was found to be predominant in samples from unit 1 and maghemite (g-Fe2O3) was found to be the dominant phase in case of unit 2. An attempt has been made to customize FTIR technique for analyzing different iron oxide phases present in the deposits of PWR-SG systems.
Date: May 2003
Creator: Namduri, Haritha

Design of Power Amplifier Test Signals with a User-Defined Multisine

Description: Cellular radio communication involves wireless transmission and reception of signals at radio frequencies (RF). Base stations house equipment critical to the transmission and reception of signals. Power amplifier (PA) is a crucial element in base station assembly. PAs are expensive, take up space and dissipate heat. Of all the elements in the base station, it is difficult to design and operate a power amplifier. New designs of power amplifiers are constantly tested. One of the most important components required to perform this test successfully is a circuit simulator model of an entire communication system that generates a standard test signal. Standard test signals 524,288 data points in length require 1080 hours to complete one test of a PA model. In order to reduce the time taken to complete one test, a 'simulated test signal,' was generated. The objective of this study is to develop an algorithm to generate this 'simulated' test signal such that its characteristics match that of the 'standard' test signal.
Date: May 2004
Creator: Nagarajan, Preeti

Development of a Hybrid Molecular Ultraviolet Photodetector based on Guanosine Derivatives

Description: Modern studies on charge transfer reaction and conductivity measurements of DNA have shown that the electrical behavior of DNA ranges from that of an insulator to that of a wide bandgap semiconductor. Based on this property of DNA, a metal-semiconductor-metal photodetector is fabricated using a self-assembled layer of deoxyguanosine derivative (DNA base) deposited between gold electrodes. The electrodes are lithographically designed on a GaN substrate separated by a distance L (50nm < L < 100nm). This work examines the electrical and optical properties of such wide-bandgap semiconductor based biomaterial systems for their potential application as photodetectors in the UV region wherein most of the biological agents emit. The objective of this study was to develop a biomolecular electronic device and design an experimental setup for electrical and optical characterization of a novel hybrid molecular optoelectronic material system. AFM results proved the usage of Ga-Polar substrate in conjugation with DG molecules to be used as a potential electronic based sensor. A two-terminal nanoscale biomolectronic diode has been fabricated showing efficient rectification ratio. A nanoscale integrated ultraviolet photodetector (of dimensions less than 100 nm) has been fabricated with a cut-off wavelength at ~ 320 nm.
Date: December 2005
Creator: Liddar, Harsheetal

Effect of Engineered Surfaces on Valve Performance

Description: Performance of air operated valves is a major maintenance concern in process industries. Anecdotal information indicates that reliability of some high maintenance valves has been improved by using an ion deposition process to achieve engineered surfaces on selected components. This project compared friction for various surface treatments of selected valve components. Results indicate valve performance may be slightly more consistent when an engineered surface is applied in the valve packing area; however surface treatment in this area does not appear to have a dominant affect on reducing valve friction. Results indicate a linear relation between stem friction and torque applied to packing flange nuts, and even after a valve is in service, controlled packing adjustments can be made without significantly changing valve stroke time.
Date: December 2000
Creator: Pope, Larry G.

Effects of Thickness and Indenter Tip Geometry in Nanoindentation of Nickel Films

Description: Nanoindentation has become a widely used technique to measure the mechanical properties of materials. Due to its capability to deform materials in micro- and nano-scale, nanoindentation has found more applications in characterizing the deformation behavior and determining the mechanical properties of thin films and coatings. This research deals with the characterization of samples received from Center for Advanced Microstructures and Devices (CAMD) and Integran Technologies Inc., Toronto, Canada and the objective of this investigation was to utilize the experimental data obtained from nanoindentation to determine the deformation behavior, mechanical properties of thin films on substrates and bulk materials, and the effect of geometrically different indenters (Berkovich, cubecorner, and conical). X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) analysis were performed on these materials to determine the crystal orientation, grain size of the material, and also to measure any substrate effects like pile-up or sin-in respectively. The results indicate that indentation size effect (ISE) strongly depends on shape of the indenter and less sensitive to penetration depth where as the hardness measurements depends on shape of indenter and depth of penetration. There is a negligible strain rate dependency of hardness at deeper depths and a significant increase in the hardness due to the decrease in grain size and results also indicate that there is no significant substrate effect on thin films for 10% and 20% of film thicknesses. Nanocrystalline material could not validate a dislocation based mechanisms deformation for indentation made by cubecorner and conical indenters in depths less than 1mm.
Date: May 2004
Creator: Parakala, Padma

Evaluation of dynamic and static electrical characteristics for the DY8 and YI8 process gallium diodes in comparison to the DI8 process boron diodes.

Description: A rectifier is an electrical device, comprising one or more semiconductor devices arranged for converting alternating current to direct current by blocking the negative or positive portion of the waveform. The purpose of this study would be to evaluate dynamic and static electrical characteristics of rectifier chips fabricated with (a) DY8 process and (b) YI8 process and compare them with the existing DI8 process rectifiers. These new rectifiers were tested to compare their performance to meet or exceed requirements of lower forward voltages, leakage currents, reverse recovery time, and greater sustainability at higher temperatures compared to diodes manufactured using boron as base (DI8 process diodes) for similar input variables.
Date: December 2006
Creator: Dhoopati, Swathi

Increasing the Dynamic Range of Audio THD Measurements Using a Novel Noise and Distortion Canceling Methodology

Description: The objective of this study was to determine how a new experimental methodology for measuring Total-Harmonic-Distortion (THD) of operational amplifiers functioned when compared with two standard methodologies, and whether the new methodology offers any improvement in noise floor and dynamic range along with distortion canceling of the sine-wave source used in the testing. The new methodology (THD) is being tested against two standard methodologies: Spectral Analysis using a tuned receiver type Spectrum Analyzer with Notch Filter pre-processing, and a digitized Fast Fourier Transform (FFT) using Notch Filter pre-processing. The THD results appear to agree across all methodologies, and across all items of the sample within all methodologies, to within a percent or less. The distortion and noise canceling feature of the new methodology appeared to function as expected and in accordance with theory. The sample tested in the study consisted of thirty-five NE5534 operational amplifiers produced by Texas Instruments, Inc. and purchased from a local store. The NE5534 is a low-noise, low-distortion, operational amplifier that is widely used in industry and is representative of today's best audio amplifiers.
Date: May 2003
Creator: Dunipace, Richard Alan

A model for designing a new telecommunication system in Mongolia

Description: The objective of this research is to design, and determine the feasibility of, a telecommunication system for the city of Erdenet, Mongolia. The Mongolian Telecommunication Company, Telecommunication Company of Erdenet city, and the National Statistical Office of Mongolia provided the data required for telecommunication forecasting of Erdenet. The literature review and analysis of the telecommunication forecasting indicate the need for a model of a new Telecommunication system in Erdenet, Mongolia. The model, as indicated, should become a useful example for planning and updating the telecommunication system in Mongolia. The design of a proposed telecommunication network involves the following considerations: analyzing and forecasting telephone traffic, calculating the required number of channels, determining exchange locations, traffic matrix, and establishing a basic hierarchical structure.
Date: May 2001
Creator: Baatarjav, Enkhbat

Nodal Resistance Measurement System

Description: The latest development in the measurement techniques has resulted in fast improvements in the instruments used for measurement of various electrical quantities. A common problem in such instruments is the automation of acquiring, retrieving and controlling the measurements by a computer or a laptop. In this study, nodal resistance measurement (NRM) system is developed to solve the above problem. The purpose of this study is to design and develop a compact electronic board, which measures electrical resistance, and a computer or a laptop controls the board. For the above purpose, surface nodal points are created on the surface of the sample electrically conductive material. The nodal points are connected to the compact electronic board and this board is connected to the computer. The user selects the nodal points, from the computer, between which the NRM system measures the electrical resistance and displays the measured quantity on the computer.
Date: May 2005
Creator: Putta, Sunil Kumar

Surface Plasmon Based Nanophotonic Optical Emitters

Description: Group- III nitride based semiconductors have emerged as the leading material for short wavelength optoelectronic devices. The InGaN alloy system forms a continuous and direct bandgap semiconductor spanning ultraviolet (UV) to blue/green wavelengths. An ideal and highly efficient light-emitting device can be designed by enhancing the spontaneous emission rate. This thesis deals with the design and fabrication of a visible light-emitting device using GaN/InGaN single quantum well (SQW) system with enhanced spontaneous emission. To increase the emission efficiency, layers of different metals, usually noble metals like silver, gold and aluminum are deposited on GaN/InGaN SQWs using metal evaporator. Surface characterization of metal-coated GaN/InGaN SQW samples was carried out using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Photoluminescence is used as a tool for optical characterization to study the enhancement in the light emitting structures. This thesis also compares characteristics of different metals on GaN/InGaN SQW system thus allowing selection of the most appropriate material for a particular application. It was found out that photons from the light emitter couple more to the surface plasmons if the bandgap of former is close to the surface plasmon resonant energy of particular metal. Absorption of light due to gold reduces the effective mean path of light emitted from the light emitter and hence quenches the quantum well emission peak compared to the uncoated sample.
Date: December 2005
Creator: Vemuri, Padma Rekha

Synthesis of cubic boron nitride thin films on silicon substrate using electron beam evaporation.

Description: Cubic boron nitride (cBN) synthesis has gained lot of interest during the past decade as it offers outstanding physical and chemical properties like high hardness, high wear resistance, and chemical inertness. Despite of their excellent properties, every application of cBN is hindered by high compressive stresses and poor adhesion. The cost of equipment is also high in almost all the techniques used so far. This thesis deals with the synthesis of cubic phase of boron nitride on Si (100) wafers using electron beam evaporator, a low cost equipment that is capable of depositing films with reduced stresses. Using this process, need of ion beam employed in ion beam assisted processes can be eliminated thus reducing the surface damage and enhancing the film adhesion. Four sets of samples have been deposited by varying substrate temperature and the deposition time. scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FTIR) techniques have been used to determine the structure and composition of the films deposited. X-ray diffraction (XRD) was performed on one of the samples to determine the thickness of the film deposited for the given deposition rate. Several samples showed dendrites being formed as a stage of film formation. It was found that deposition at substrate temperature of 400oC and for a period of one hour yielded high quality cubic boron nitride films.
Date: May 2004
Creator: Vemuri, Prasanna