A 2.53 NEF 8-bit 10 kS/s 0.5 µm CMOS Neural Recording Read-Out Circuit with High Linearity for Neuromodulation Implants
Description: This article presents a power-efficient complementary metal-oxide-semiconductor (CMOS) neural signal-recording read-out circuit for multichannel neuromodulation implants.
Date: March 3, 2021
Creator: Tasneem, Nishat Tarannum & Mahbub, Ifana
Item Type: Refine your search to only Article
Partner: UNT College of Engineering