Method of Making Integrated Circuits Using Ruthenium and its Oxides as a Cu Diffusion Barrier
Description:
Patent relating to a method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier.
Date:
July 24, 2007
Creator:
Chyan, Oliver M. R. & Ponnuswamy, Thomas
Item Type:
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Patent
Partner:
UNT College of Arts and Sciences