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Polymer Gels: Kinetics, Dynamics Studies and Their Applications as Biomaterials

Description: The polymer gels especially hydrogels have a very special structure and useful features such as unusual volume phase transition, compatibility with biological systems, and sensitivity to environmental stimuli (temperature, pH value, electric field, light and more), which lead to many potential applications in physical and biochemical fields. This research includes: (1) the theoretical and experimental studies of polymer gels on swelling kinetics, spinodal decomposition, and solution convection in gel matrix; (2) applications of polymer gels in wound dressing, tissue-simulating optical phantom and gel display. The kinetics of gel swelling has been theoretically analyzed by considering coupled motions of both solvent and polymer network. Analytical solutions of the solvent and the network movement are derived from collective diffusion equations for a long cylindrical and a large disk gel. Kinetics of spinodal decomposition of N-isopropylacrylamide (NIPA) polymer gel is investigated using turbidity and ultrasonic techniques. By probing movement of domains, a possible time-dependent gel structure in the spinodal decomposition region is presented. Theoretical studies of solution convection in gel matrix have been done and more analysis on dimensionless parameters is provided. To enhance the drug uptake and release capacity of silicone rubber (SR), NIPA hydrogel particles have been incorporated into a SR membrane. This SR/NIPA composite gel has promising attributes for wound dressing and other uses. Tissue-simulating optical phantom has been synthesized and studied using NIPA solution trapped inside a hydrogel. Polymer gels with engineered surface patterns were implemented. NIPA gel deposited on the surface of an acrylamide gel can be used as responsive gel display. A dynamically measurement technique of local shear modulus and swelling ratio of gel is presented based on an engineered periodic surface pattern as square array.
Date: December 2003
Creator: Wang, Changjie
Partner: UNT Libraries

Oligonucleotide guanosine conjugated to gallium nitride nano-structures for photonics.

Description: In this work, I studied the hybrid system based on self-assembled guanosine crystal (SAGC) conjugated to wide-bandgap semiconductor gallium nitride (GaN). Guanosine is one of the four bases of DNA and has the lowest oxidation energy, which favors carrier transport. It also has large dipole moment. Guanosine molecules self-assemble to ribbon-like structure in confined space. GaN surface can have positive or negative polarity depending on whether the surface is Ga- or N-terminated. I studied SAGC in confined space between two electrodes. The current-voltage characteristics can be explained very well with the theory of metal-semiconductor-metal (MSM) structure. I-V curves also show strong rectification effect, which can be explained by the intrinsic polarization along the axis of ribbon-like structure of SAGC. GaN substrate property influences the properties of SAGC. So SAGC has semiconductor properties within the confined space up to 458nm. When the gap distance gets up to 484nm, the structure with guanosine shows resistance characteristics. The photocurrent measurements show that the bandgap of SAGC is about 3.3-3.4eV and affected by substrate properties. The MSM structure based on SAGC can be used as photodetector in UV region. Then I show that the periodic structure based on GaN and SAGC can have photonic bandgaps. The bandgap size and the band edges can be tuned by tuning lattice parameters. Light propagation and emission can be tuned by photonic crystals. So the hybrid photonic crystal can be potentially used to detect guanosine molecules. If guanosine molecules are used as functional linker to other biomolecules which usually absorb or emit light in blue to UV region, the hybrid photonic crystal can also be used to tune the coupling of light source to guanosine molecules, then to other biomolecules.
Date: August 2008
Creator: Li, Jianyou
Partner: UNT Libraries

The Effects of Cesium Deposition and Gas Exposure on the Field Emission Properties of Single Wall and Multiwall Carbon Nanotubes

Description: The effects of Cs deposition on the field emission (FE) properties of single-walled carbon nanotube (SWNT) bundles were studied. In addition, a comparative study was made on the effects of O2, Ar and H2 gases on the field emission properties of SWNT bundles and multiwall carbon nanotubes (MWNTs). We observed that Cs deposition decreases the turn-on field for FE by a factor of 2.1 - 2.9 and increases the FE current by 6 orders of magnitude. After Cs deposition, the FE current versus voltage (I-V) curves showed non-Fowler-Nordheim behavior at large currents consistent with tunneling from adsorbate states. At lower currents, the ratio of the slope of the FE I-V curves before and after Cs deposition was approximately 2.1. Exposure to N2 does not decrease the FE current, while exposure to O2 decreases the FE current. Our results show that cesiated SWNT bundles have great potential as economical and reliable vacuum electron sources. We find that H2 and Ar gases do not significantly affect the FE properties of SWNTs or MWNTs. O2 temporarily reduces the FE current and increases the turn-on voltage of SWNTs. Full recovery of these properties occurred after operation in UHV. The higher operating voltages in an O2 environment caused a permanent decrease of FE current and increase in turn-on field of MWNTs. The ratios of the slopes before and after O2 exposure were approximately 1.04 and 0.82 for SWNTs and MWNTs, respectively. SWNTs compared to MWNTs would appear to make more economical and reliable vacuum electron sources.
Date: May 2002
Creator: Wadhawan, Atul
Partner: UNT Libraries

The Effect of Average Grain Size on Polycrystalline Diamond Films

Description: The work function of hydrogen-terminated, polycrystalline diamond was studied using ultraviolet photoelectron spectroscopy. Polycrystalline diamond films were deposited onto molybdenum substrates by electrophoresis for grain sizes ranging from 0.3 to 108 microns. The work function and electron affinity were measured using 21.2 eV photons from a helium plasma source. The films were characterized by x-ray photoelectron spectroscopy to determine elemental composition and the sp2/sp3 carbon fraction. The percentage of (111) diamond was determined by x-ray diffraction, and scanning electron microscopy was performed to determine average grain size. The measured work function has a maximum of 5.1 eV at 0.3 microns, and decreases to 3.2 eV at approximately 4 microns. Then the work function increases with increasing grain size to 4.0 eV at 15 microns and then asymptotically approaches the 4.8 eV work function of single crystal diamond at 108 microns. These results are consistent with a 3-component model in which the work function is controlled by single-crystal (111) diamond at larger grain sizes, graphitic carbon at smaller grain sizes, and by the electron affinity for the intervening grain sizes.
Date: May 2002
Creator: Abbott, Patrick Roland
Partner: UNT Libraries

Microscopic Foundations of Thermodynamics and Generalized Statistical Ensembles

Description: This dissertation aims at addressing two important theoretical questions which are still debated in the statistical mechanical community. The first question has to do with the outstanding problem of how to reconcile time-reversal asymmetric macroscopic laws with the time-reversal symmetric laws of microscopic dynamics. This problem is addressed by developing a novel mechanical approach inspired by the work of Helmholtz on monocyclic systems and the Heat Theorem, i.e., the Helmholtz Theorem. By following a line of investigation initiated by Boltzmann, a Generalized Helmholtz Theorem is stated and proved. This theorem provides us with a good microscopic analogue of thermodynamic entropy. This is the volume entropy, namely the logarithm of the volume of phase space enclosed by the constant energy hyper-surface. By using quantum mechanics only, it is shown that such entropy can only increase. This can be seen as a novel rigorous proof of the Second Law of Thermodynamics that sheds new light onto the arrow of time problem. The volume entropy behaves in a thermodynamic-like way independent of the number of degrees of freedom of the system, indicating that a whole thermodynamic-like world exists at the microscopic level. It is also shown that breaking of ergodicity leads to microcanonical phase transitions associated with nonanalyticities of volume entropy. The second part of the dissertation deals with the problem of the foundations of generalized ensembles in statistical mechanics. The starting point is Boltzmann's work on statistical ensembles and its relation with the Heat Theorem. We first focus on the nonextensive thermostatistics of Tsallis and the associated deformed exponential ensembles. These ensembles are analyzed in detail and proved (a) to comply with the requirements posed by the Heat Theorem, and (b) to interpolate between canonical and microcanonical ensembles. Further they are showed to describe finite systems in contact with finite heat baths. ...
Date: May 2008
Creator: Campisi, Michele
Partner: UNT Libraries

Multifunctional Organic-Inorganic Hybrid Nanophotonic Devices

Description: The emergence of optical applications, such as lasers, fiber optics, and semiconductor based sources and detectors, has created a drive for smaller and more specialized devices. Nanophotonics is an emerging field of study that encompasses the disciplines of physics, engineering, chemistry, biology, applied sciences and biomedical technology. In particular, nanophotonics explores optical processes on a nanoscale. This dissertation presents nanophotonic applications that incorporate various forms of the organic polymer N-isopropylacrylamide (NIPA) with inorganic semiconductors. This includes the material characterization of NIPA, with such techniques as ellipsometry and dynamic light scattering. Two devices were constructed incorporating the NIPA hydrogel with semiconductors. The first device comprises a PNIPAM-CdTe hybrid material. The PNIPAM is a means for the control of distances between CdTe quantum dots encapsulated within the hydrogel. Controlling the distance between the quantum dots allows for the control of resonant energy transfer between neighboring quantum dots. Whereby, providing a means for controlling the temperature dependent red-shifts in photoluminescent peaks and FWHM. Further, enhancement of photoluminescent due to increased scattering in the medium is shown as a function of temperature. The second device incorporates NIPA into a 2D photonic crystal patterned on GaAs. The refractive index change of the NIPA hydrogel as it undergoes its phase change creates a controllable mechanism for adjusting the transmittance of light frequencies through a linear defect in a photonic crystal. The NIPA infiltrated photonic crystal shows greater shifts in the bandwidth per ºC than any liquid crystal methods. This dissertation demonstrates the versatile uses of hydrogel, as a means of control in nanophotonic devices, and will likely lead to development of other hybrid applications. The development of smaller light based applications will facilitate the need to augment the devices with control mechanism and will play an increasing important role in the future.
Date: May 2008
Creator: Garner, Brett William
Partner: UNT Libraries

Emergence of Complexity from Synchronization and Cooperation

Description: The dynamical origin of complexity is an object of intense debate and, up to moment of writing this manuscript, no unified approach exists as to how it should be properly addressed. This research work adopts the perspective of complexity as characterized by the emergence of non-Poisson renewal processes. In particular I introduce two new complex system models, namely the two-state stochastic clocks and the integrate-and-fire stochastic neurons, and investigate its coupled dynamics in different network topologies. Based on the foundations of renewal theory, I show how complexity, as manifested by the occurrence of non-exponential distribution of events, emerges from the interaction of the units of the system. Conclusion is made on the work's applicability to explaining the dynamics of blinking nanocrystals, neuron interaction in the human brain, and synchronization processes in complex networks.
Date: May 2008
Creator: Geneston, Elvis L.
Partner: UNT Libraries

Perturbation of renewal processes

Description: Renewal theory began development in the early 1940s, as the need for it in the industrial engineering sub-discipline operations research had risen. In time, the theory found applications in many stochastic processes. In this thesis I investigated the effect of seasonal effects on Poisson and non-Poisson renewal processes in the form of perturbations. It was determined that the statistical analysis methods developed at UNT Center for Nonlinear Science can be used to detect the effects of seasonality on the data obtained from Poisson/non-Poisson renewal systems. It is proved that a perturbed Poisson process can serve as a paradigmatic model for a case where seasonality is correlated to the noise and that diffusion entropy method can be utilized in revealing this relation. A renewal model making a connection with the stochastic resonance phenomena is used to analyze a previous neurological experiment, and it was shown that under the effect of a nonlinear perturbation, a non-Poisson system statistics may make a transition and end up in the of Poisson basin of statistics. I determine that nonlinear perturbation of the power index for a complex system will lead to a change in the complexity characteristics of the system, i.e., the system will reach a new form of complexity.
Date: May 2008
Creator: Akin, Osman Caglar
Partner: UNT Libraries

Complexity as Aging Non-Poisson Renewal Processes

Description: The search for a satisfactory model for complexity, meant as an intermediate condition between total order and total disorder, is still subject of debate in the scientific community. In this dissertation the emergence of non-Poisson renewal processes in several complex systems is investigated. After reviewing the basics of renewal theory, another popular approach to complexity, called modulation, is introduced. I show how these two different approaches, given a suitable choice of the parameter involved, can generate the same macroscopic outcome, namely an inverse power law distribution density of events occurrence. To solve this ambiguity, a numerical instrument, based on the theoretical analysis of the aging properties of renewal systems, is introduced. The application of this method, called renewal aging experiment, allows us to distinguish if a time series has been generated by a renewal or a modulation process. This method of analysis is then applied to several physical systems, from blinking quantum dots, to the human brain activity, to seismic fluctuations. Theoretical conclusions about the underlying nature of the considered complex systems are drawn.
Date: May 2007
Creator: Bianco, Simone
Partner: UNT Libraries

Non-Poissonian statistics, aging and "blinking'" quantum dots.

Description: This dissertation addresses the delicate problem of aging in complex systems characterized by non-Poissonian statistics. With reference to a generic two-states system interacting with a bath it is shown that to properly describe the evolution of such a system within the formalism of the continuous time random walk (CTRW), it has to be taken into account that, if the system is prepared at time t=0 and the observation of the system starts at a later time ta>0, the distribution of the first sojourn times in each of the two states depends on ta, the age of the system. It is shown that this aging property in the fractional derivative formalism forces to introduce a fractional index depending on time. It is shown also that, when a stationary condition exists, the Onsager regression principle is fulfilled only if the system is aged and consequently if an infinitely aged distribution for the first sojourn times is adopted in the CTRW formalism used to describe the system itself. This dissertation, as final result, shows how to extend to the non-Poisson case the Kubo Anderson (KA) lineshape theory, so as to turn it into a theoretical tool adequate to describe the time evolution of the absorption and emission spectra of CdSe quantum dots. The fluorescence emission of these single nanocrystals exhibits interesting intermittent behavior, namely, a sequence of "light on" and "light off" states, departing from Poisson statistics. Taking aging into account an exact analytical treatment is derived to calculate the spectrum. In the regime fitting experimental data this final result implies that the spectrum of the "blinking" quantum dots must age forever.
Date: August 2004
Creator: Aquino, Gerardo
Partner: UNT Libraries

Random growth of interfaces: Statistical analysis of single columns and detection of critical events.

Description: The dynamics of growth and formation of surfaces and interfaces is becoming very important for the understanding of the origin and the behavior of a wide range of natural and industrial dynamical processes. The first part of the paper is focused on the interesting field of the random growth of surfaces and interfaces, which finds application in physics, geology, biology, economics, and engineering among others. In this part it is studied the random growth of surfaces from within the perspective of a single column, namely, the fluctuation of the column height around the mean value, which is depicted as being subordinated to a standard fluctuation-dissipation process with friction g. It is argued that the main properties of Kardar-Parisi-Zhang theory are derived by identifying the distribution of return times to y(0) = 0, which is a truncated inverse power law, with the distribution of subordination times. The agreement of the theoretical prediction with the numerical treatment of the model of ballistic deposition is remarkably good, in spite of the finite size effects affecting this model. The second part of the paper deals with the efficiency of the diffusion entropy analysis (DEA) when applied to the studies of stromatolites. In this case it is shown that this tool can be confidently used for the detection of complexity. The connection between the two studies is established by the use of the DEA itself. In fact, in both analyses, that is, the random growth of interfaces and the study of stromatolites, the method of diffusion entropy is able to detect the real scaling of the system, namely, the scaling of the process is determined by genuinely random events, also called critical events.
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Date: August 2004
Creator: Failla, Roberto
Partner: UNT Libraries

The Concept of Collision Strength and Its Applications

Description: Collision strength, the measure of strength for a binary collision, hasn't been defined clearly. In practice, many physical arguments have been employed for the purpose and taken for granted. A scattering angle has been widely and intensively used as a measure of collision strength in plasma physics for years. The result of this is complication and unnecessary approximation in deriving some of the basic kinetic equations and in calculating some of the basic physical terms. The Boltzmann equation has a five-fold integral collision term that is complicated. Chandrasekhar and Spitzer's approaches to the linear Fokker-Planck coefficients have several approximations. An effective variable-change technique has been developed in this dissertation as an alternative to scattering angle as the measure of collision strength. By introducing the square of the reduced impulse or its equivalencies as a collision strength variable, many plasma calculations have been simplified. The five-fold linear Boltzmann collision integral and linearized Boltzmann collision integral are simplified to three-fold integrals. The arbitrary order linear Fokker-Planck coefficients are calculated and expressed in a uniform expression. The new theory provides a simple and exact method for describing the equilibrium plasma collision rate, and a precise calculation of the equilibrium relaxation time. It generalizes bimolecular collision reaction rate theory to a reaction rate theory for plasmas. A simple formula of high precision with wide temperature range has been developed for electron impact ionization rates for carbon atoms and ions. The universality of the concept of collision strength is emphasized. This dissertation will show how Arrhenius' chemical reaction rate theory and Thomson's ionization theory can be unified as one single theory under the concept of collision strength, and how many important physical terms in different disciplines, such as activation energy in chemical reaction theory, ionization energy in Thomson's ionization theory, and the Coulomb logarithm in ...
Date: May 2004
Creator: Chang, Yongbin
Partner: UNT Libraries

A Novel Process for GeSi Thin Film Synthesis

Description: A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x thin-film with a composition that can be tailored by controlling the oxidation parameters (e.g. temperature and oxidation ambient). In addition, the film thickness can be controlled by implantation fluence, which is important since the film forms pseudomorphically below 2×1016 Ge/cm2. Continued oxidation consumes the underlying Si leaving the strained GeSi film encapsulated by the two oxide layers, i.e. the top thermal oxide and the buried oxide. Removal of the thermal oxide by a dilute HF etch completes the process. Strain relaxation can be achieved by either of two methods. One involves vacancy injection by ion implantation to introduce sufficient open-volume within the film to compensate for the compressive strain. The other depends upon the formation of GeO2. If Ge is oxidized in the absence of Si, it evaporates as GeO(g) resulting in spontaneous relaxation within the strained film. Conditions under which this occurs have been discussed along with elaborated results of oxidation kinetics of Ge-ion implanted silicon. Rutherford backscattering spectrometry (RBS), ion channeling, Raman spectroscopy and scanning electron microscopy (SEM) were used as the characterization techniques.
Date: December 2007
Creator: Hossain, Khalid
Partner: UNT Libraries

Growth and Characterization of β-Iron Disilicide, β-Iron Silicon Germanide, and Osmium Silicides

Description: The semiconducting silicides offer significant potential for use in optoelectronic devices. Full implementation of the materials, however, requires the ability to tailor the energy gap and band structure to permit the synthesis of heterojunctions. One promising approach is to alloy the silicides with Ge. As part of an investigation into the synthesis of semiconducting silicide heterostructures, a series of β-Fe(Si1−xGex)2 epilayer samples, with nominal alloy content in the range 0 < x < 0.15, have been prepared by molecular beam epitaxy on Si(100). I present results of the epitaxial and crystalline quality of the films, as determined by reflection high-energy electron diffraction, Rutherford backscattering spectroscopy, and double crystal x-ray diffraction, and of the band gap dependence on the alloy composition, as determined by Fourier transform infrared spectroscopy. A reduction in band gap was observed with increasing Ge content, in agreement with previous theoretical predictions. However Ge segregation was also observed in β-Fe(Si1−xGex)2 epilayers when x > 0.04. Osmium silicide films have been grown by molecular beam epitaxy on Si(100). The silicides have been grown using e-beam evaporation sources for both Os and Si onto Si(100) substrates at varying growth rates and temperatures ranging from 600-700ºC. The resulting films have been analyzed using reflection high-energy electron diffraction, Raman spectroscopy, reflectivity measurements, in-plane and out of plane X-ray diffraction and temperature dependent magnetotransport. A change in crystalline quality is observed with an increase in Si overpressure. For a lower silicon to osmium flux ration (JSi/JOs=1.5) both OsSi2 and Os2Si3 occur, whereas with a much larger Si overpressure (JSi/JOs>4), crystalline quality is greatly increased and only a single phase, Os2Si3, is present. The out-of-plane X-ray diffraction data show that the film grows along its [4 0 2] direction, with a good crystal quality as evidenced by the small FWHM in the rocking curve. ...
Date: August 2009
Creator: Cottier, Ryan James
Partner: UNT Libraries

Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx

Description: Multilayer structures of AlxIn1-xAsySb1-y/GaSb (0.37 £ x £ 0.43, 0.50 £ y £ 0.52), grown by molecular beam epitaxy on GaSb (100) substrates were characterized using variable temperature Hall and Shubnikov-de Haas techniques. For nominally undoped structures both p and n-type conductivity was observed. The mobilities obtained were lower than those predicted by an interpolation method using the binary alloys; therefore, a detailed analysis of mobility versus temperature data was performed to extract the appropriate scattering mechanisms. For p-type samples, the dominant mechanism was ionized impurity scattering at low temperatures and polar optical phonon scattering at higher temperatures. For n-type samples, ionized impurity scattering was predominant at low temperatures, and electron-hole scattering dominated for both the intermediate and high temperature range. Analyses of the Shubnikov-de Haas data indicate the presence of 2-D carrier confinement consistent with energy subbands in GaAszSb1-z potential wells. Epilayers of GaAs1-xSbx (0.19<x<0.71), grown by MBE on semi-insulating GaAs with various substrate orientations, were studied by absorption measurements over the temperature range of 4-300 K. The various substrate orientations were chosen to induce different degrees of spontaneous atomic ordering. The temperature dependence of the energy gap (Eg) for each of these samples was modeled using three semi-empirical relationships. The resulting coefficients for each model describe not only the temperature dependence of Eg for each of the alloy compositions investigated, but also for all published results for this alloy system. The effect of ordering in these samples was manifested by a deviation of the value of Eg from the value of the random alloy. The presence of CuPt-B type atomic ordering was verified by transmission electron diffraction measurements, and the order parameter was estimated for all the samples investigated and found to be larger for the samples grown on the (111) A offcut orientations. This result strongly suggests ...
Date: May 2003
Creator: Lukic- Zrnic, Reiko
Partner: UNT Libraries

Chaos and Momentum Diffusion of the Classical and Quantum Kicked Rotor

Description: The de Broglie-Bohm (BB) approach to quantum mechanics gives trajectories similar to classical trajectories except that they are also determined by a quantum potential. The quantum potential is a "fictitious potential" in the sense that it is part of the quantum kinetic energy. We use quantum trajectories to treat quantum chaos in a manner similar to classical chaos. For the kicked rotor, which is a bounded system, we use the Benettin et al. method to calculate both classical and quantum Lyapunov exponents as a function of control parameter K and find chaos in both cases. Within the chaotic sea we find in both cases nonchaotic stability regions for K equal to multiples of π. For even multiples of π the stability regions are associated with classical accelerator mode islands and for odd multiples of π they are associated with new oscillator modes. We examine the structure of these regions. Momentum diffusion of the quantum kicked rotor is studied with both BB and standard quantum mechanics (SQM). A general analytical expression is given for the momentum diffusion at quantum resonance of both BB and SQM. We obtain agreement between the two approaches in numerical experiments. For the case of nonresonance the quantum potential is not zero and must be included as part of the quantum kinetic energy for agreement. The numerical data for momentum diffusion of classical kicked rotor is well fit by a power law DNβ in the number of kicks N. In the anomalous momentum diffusion regions due to accelerator modes the exponent β(K) is slightly less than quadratic, except for a slight dip, in agreement with an upper bound (K2/2)N2. The corresponding coefficient D(K) in these regions has three distinct sections, most likely due to accelerator modes with period greater than one. We also show that the local ...
Date: August 2005
Creator: Zheng, Yindong
Partner: UNT Libraries

Decoherence, Master Equation for Open Quantum Systems, and the Subordination Theory

Description: This thesis addresses the problem of a form of anomalous decoherence that sheds light into the spectroscopy of blinking quantum dots. The system studied is a two-state system, interacting with an external environment that has the effect of establishing an interaction between the two states, via a coherence generating coupling, called inphasing. The collisions with the environment produce also decoherence, named dephasing. Decoherence is interpreted as the entanglement of the coherent superposition of these two states with the environment. The joint action of inphasing and dephasing generates a Markov master equation statistically equivalent to a random walker jumping from one state to the other. This model can be used to describe intermittent fluorescence, as a sequence of "light on" and "light off" states. The experiments on blinking quantum dots indicate that the sojourn times are distributed with an inverse power law. Thus, a proposal to turn the model for Poisson fluorescence intermittency into a model for non-Poisson fluorescence intermittency is made. The collision-like interaction of the two-state system with the environment is assumed to takes place at random times rather than at regular times. The time distance between one collision and the next is given by a distribution, called the subordination distribution. If the subordination distribution is exponential, a sequence of collisions yielding no persistence is turned into a sequence of "light on" and "light off" states with significant persistence. If the subordination function is an inverse power law the sequel of "light on" and "light off" states becomes equivalent to the experimental sequences. Different conditions are considered, ranging from predominant inphasing to predominant dephasing. When dephasing is predominant the sequel of "light on" and "light off" states in the time asymptotic limit becomes an inverse power law. If the predominant dephasing involves a time scale much larger than the ...
Date: August 2005
Creator: Giraldi, Filippo
Partner: UNT Libraries

Anderson Localization in Two-Channel Wires with Correlated Disorder: DNA as an Application

Description: This research studied the Anderson localization of electrons in two-channel wires with correlated disorder and in DNA molecules. It involved an analytical calculation part where the formula for the inverse localization length for electron states in a two-channel wire is derived. It also involved a computational part where the localization length is calculated for some DNA molecules. Electron localization in two-channel wires with correlated disorder was studied using a single-electron tight-binding model. Calculations were within second-order Born-approximation to second-order in disorder parameters. An analytical expression for localization length as a functional of correlations in potentials was found. Anderson localization in DNA molecules were studied in single-channel wire and two-channel models for electron transport in DNA. In both of the models, some DNA sequences exhibited delocalized electron states in their energy spectrum. Studies with two-channel wire model for DNA yielded important link between electron localization properties and genetic information.
Date: December 2007
Creator: Bagci, V. M. Kemal
Partner: UNT Libraries

Neutron Transmutation and Hydrogenation Study of Hg₁₋xCdxTe

Description: Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total mobility is observed to decrease with increased neutron dose and can be fitted by including a mobility inverse proportional to neutron dose. Electron introduction rate of thermal neutron is much smaller than that of fission neutrons. Total recovering of the material is suggested to have longer time annealing. Using Kane's model, we also fitted carrier concentration change at low temperature by introducing a donor level with activation energy changing with temperature. Results on Se diffusion in liquid phase epitaxy (LPE) grown HgCdTe epilayers is reported. The LPE Hg0.78Cd0.22Te samples were implanted with Se of 2.0×1014/cm2 at 100keV and annealed at ...
Date: December 2007
Creator: Zhao, Wei
Partner: UNT Libraries

The Nonadditive Generalization of Klimontovich's S-Theorem for Open Systems and Boltzmann's Orthodes

Description: We show that the nonadditive open systems can be studied in a consistent manner by using a generalized version of S-theorem. This new generalized S-theorem can further be considered as an indication of self-organization in nonadditive open systems as prescribed by Haken. The nonadditive S-theorem is then illustrated by using the modified Van der Pol oscillator. Finally, Tsallis entropy as an equilibrium entropy is studied by using Boltzmann's method of orthodes. This part of dissertation shows that Tsallis ensemble is on equal footing with the microcanonical, canonical and grand canonical ensembles. However, the associated entropy turns out to be Renyi entropy.
Date: August 2008
Creator: Bagci, Gokhan Baris
Partner: UNT Libraries

Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Description: A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation with computer simulation results. It will be shown that transport of ions in matter (TRIM) can be used effectively to model the ion-induced damage profile, i.e. excess defect distributions, by a simple subtraction process in which the spatially correlated defects are removed, thereby simulating recombination. Classic defect studies illuminate defect interactions from concomitant implantation of high- and medium-energy Si+-self ions. Also, the predictive quality of the excess defect model was tested by applying the model to develop several experiments to engineer excess defect concentrations to substantially change the nature and distribution of the defects. Not only are the excess defects shown to play a dominant role in defect-related processing issues, but their manipulation is demonstrated to be a powerful tool in tailoring the implantation process to achieve design goals. Pre-amorphization and dual implantation of different energetic ions are two primary investigative tools used in this work. Various analyses, ...
Date: May 2006
Creator: Roth, Elaine Grannan
Partner: UNT Libraries

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active nano-sized precipitates in silica to form the active layer of an opto-electronic device was achieved with ion implantation and thermal annealing. Three material systems were investigated. These systems consisted of carbon, silicon and metal silicide based nanocrystals. The physical morphology and electronic properties were monitored using a variety of material characterization techniques. Rutherford backscattering/channeling were used to monitor elemental concentrations, photoluminescence was used to monitor the opto-electronic properties and transmission electron microscopy was used to study the intricate morphology of individual precipitates. The electronic properties and the morphology were studied as a function of implant dose, anneal times and anneal ...
Date: May 2006
Creator: Mitchell, Lee
Partner: UNT Libraries

Nonlinear UV Laser Build-up Cavity: An Efficient Design

Description: Using the concept of the build-up cavity for second harmonic generation to produce 243nm laser light, an innovative cavity is theoretically explored using a 15mm length CLBO crystal. In order to limit the losses of the cavity, the number of effective optical surfaces is kept to only four and the use of a MgF2 crystal is adopted to separate the harmonic and fundamental laser beam from each other. The cavity is shown to have an expected round trip loss of five tenths of a percent or better, resulting in a conversion efficiency greater than 65%.
Date: May 2009
Creator: Rady, Nicholas Henry
Partner: UNT Libraries

An entropic approach to the analysis of time series.

Description: Statistical analysis of time series. With compelling arguments we show that the Diffusion Entropy Analysis (DEA) is the only method of the literature of the Science of Complexity that correctly determines the scaling hidden within a time series reflecting a Complex Process. The time series is thought of as a source of fluctuations, and the DEA is based on the Shannon entropy of the diffusion process generated by these fluctuations. All traditional methods of scaling analysis, instead, are based on the variance of this diffusion process. The variance methods detect the real scaling only if the Gaussian assumption holds true. We call H the scaling exponent detected by the variance methods and d the real scaling exponent. If the time series is characterized by Fractional Brownian Motion, we have H¹d and the scaling can be safely determined, in this case, by using the variance methods. If, on the contrary, the time series is characterized, for example, by Lévy statistics, H ¹ d and the variance methods cannot be used to detect the true scaling. Lévy walk yields the relation d=1/(3-2H). In the case of Lévy flights, the variance diverges and the exponent H cannot be determined, whereas the scaling d exists and can be established by using the DEA. Therefore, only the joint use of two different scaling analysis methods, the variance scaling analysis and the DEA, can assess the real nature, Gauss or Lévy or something else, of a time series. Moreover, the DEA determines the information content, under the form of Shannon entropy, or of any other convenient entopic indicator, at each time step of the process that, given a sufficiently large number of data, is expected to become diffusion with scaling. This makes it possible to study the regime of transition from dynamics to thermodynamics, non-stationary regimes, ...
Date: December 2001
Creator: Scafetta, Nicola
Partner: UNT Libraries