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Emergence of Complexity from Synchronization and Cooperation

Description: The dynamical origin of complexity is an object of intense debate and, up to moment of writing this manuscript, no unified approach exists as to how it should be properly addressed. This research work adopts the perspective of complexity as characterized by the emergence of non-Poisson renewal processes. In particular I introduce two new complex system models, namely the two-state stochastic clocks and the integrate-and-fire stochastic neurons, and investigate its coupled dynamics in different network topologies. Based on the foundations of renewal theory, I show how complexity, as manifested by the occurrence of non-exponential distribution of events, emerges from the interaction of the units of the system. Conclusion is made on the work's applicability to explaining the dynamics of blinking nanocrystals, neuron interaction in the human brain, and synchronization processes in complex networks.
Date: May 2008
Creator: Geneston, Elvis L.
Partner: UNT Libraries

Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target

Description: Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputtering and tunable dye lasers for resonance ionization. Observation of the energy distribution was achieved with a position-sensitive detector. The principle behind the detector's energy resolution is time of flight (TOF) spectroscopy. For this specific detector, programmed time intervals between the sputtering pulse at the target and the ionizing laser pulse provided information leading to the energy distribution of the secondary neutral particles. This experiment contributes data for energy distributions of sputtered neutral particles to the experimental database, required by theoretical models and computer simulations for the sputtering phenomenon.
Date: August 2000
Creator: Bigelow, Alan W.
Partner: UNT Libraries

Enhancements of Mechanical, Thermal Stability, and Tribological Properties by Addition of Functionalized Reduced Graphene Oxide in Epoxy

Description: The effects of octadecylamine-functionalized reduced graphene oxide (FRGO) on the frictional and wear properties of diglycidylether of bisphenol-A (DGEBA) epoxy are studied using a pin-on-disk tribometer. It was observed that the addition of FRGO significantly improves the tribological, mechanical, and thermal properties of epoxy matrix. Graphene oxide (GO) was functionalized with octadecylamine (ODA), and then reduction of oxygen-containing functional groups was carried out using hydrazine monohydrate. The Raman and x-ray photoelectron spectroscopy studies confirm significant reduction in oxygen-containing functional groups and formation of ODA functionalized reduced GO. The nanocomposites are prepared by adding 0.1, 0.2, 0.5 and 1.0 wt % of FRGO to the epoxy. The addition of FRGO increases by more than an order of magnitude the sliding distance during which the dynamic friction is ≤ 0.1. After this distance, the friction sharply increases to the range of 0.4 - 0.5. We explain the increase in sliding distance during which the friction is low by formation of a transfer film from the nanocomposite to the counterface. The wear rates in the low and high friction regimes are approximately 1.5 x 10-4 mm3/N·m and 5.5 x 10-4 mm3/N·m, respectively. The nanocomposites exhibit a 74 % increase in Young’s modulus with 0.5 wt. % of FRGO, and an increase in glass transition and thermal degradation temperatures.
Date: August 2014
Creator: Shah, Rakesh K.
Partner: UNT Libraries

An entropic approach to the analysis of time series.

Description: Statistical analysis of time series. With compelling arguments we show that the Diffusion Entropy Analysis (DEA) is the only method of the literature of the Science of Complexity that correctly determines the scaling hidden within a time series reflecting a Complex Process. The time series is thought of as a source of fluctuations, and the DEA is based on the Shannon entropy of the diffusion process generated by these fluctuations. All traditional methods of scaling analysis, instead, are based on the variance of this diffusion process. The variance methods detect the real scaling only if the Gaussian assumption holds true. We call H the scaling exponent detected by the variance methods and d the real scaling exponent. If the time series is characterized by Fractional Brownian Motion, we have H¹d and the scaling can be safely determined, in this case, by using the variance methods. If, on the contrary, the time series is characterized, for example, by Lévy statistics, H ¹ d and the variance methods cannot be used to detect the true scaling. Lévy walk yields the relation d=1/(3-2H). In the case of Lévy flights, the variance diverges and the exponent H cannot be determined, whereas the scaling d exists and can be established by using the DEA. Therefore, only the joint use of two different scaling analysis methods, the variance scaling analysis and the DEA, can assess the real nature, Gauss or Lévy or something else, of a time series. Moreover, the DEA determines the information content, under the form of Shannon entropy, or of any other convenient entopic indicator, at each time step of the process that, given a sufficiently large number of data, is expected to become diffusion with scaling. This makes it possible to study the regime of transition from dynamics to thermodynamics, non-stationary regimes, ...
Date: December 2001
Creator: Scafetta, Nicola
Partner: UNT Libraries

Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Description: High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.
Date: May 1999
Creator: Venezia, Vincent C.
Partner: UNT Libraries

An Experimental Study of Collision Broadening of some Excited Rotational States of the Bending Vibration of Methyl Cyanide

Description: A double modulation microwave spectrometer is used to evaluate the linewidth parameters for some excited rotational components in the bending vibration v_8 of 13CH3 13C 15N and 13CH3C15N isotopomers of methyl cyanide. The linewidth parameters for self-broadening of the ΔJ=2←1 rotational components for the ground v_8 , 1v_8, and the 2v_8 vibrations were determined over a pressure range of 1 to 13 mtorr and at a temperature of 300 K. The double modulation technique is used to explore the high eighth derivative of the line shape profile of the spectral line. This technique proved to give good signal-to-noise ratios and enabled the recovery of weak signals. An experimental method is developed to correct for source modulation broadening. The tests of the ratios of the two inner peak's separation of the eighth derivative of the line showed that they were up to 95% similar to those for a Lorentzian line shape function. The line shapes were assumed to be Lorentzian for the theoretical analysis of the derivative profiles and comparisons were made between experiment and theory on this basis. Dipole moments for vibrationally excited states were calculated from linewidth parameters and show systematic decrease with the increase of excitation. Impact parameters were calculated using the "hard sphere" model of the kinetic theory of gases. The results were many times larger than the size of the molecule itself. This suggests that the dominant interaction is a long range dipole-dipole force interaction.
Date: May 1993
Creator: Hajsaleh, Jamal Y. (Jamal Yousef)
Partner: UNT Libraries

Experimental Synchronization of Chaotic Attractors Using Control

Description: The focus of this thesis is to theoretically and experimentally investigate two new schemes of synchronizing chaotic attractors using chaotically operating diode resonators. The first method, called synchronization using control, is shown for the first time to experimentally synchronize dynamical systems. This method is an economical scheme which can be viably applied to low dimensional dynamical systems. The other, unidirectional coupling, is a straightforward means of synchronization which can be implemented in fast dynamical systems where timing is critical. Techniques developed in this work are of fundamental importance for future problems regarding high dimensional chaotic dynamical systems or arrays of mutually linked chaotically operating elements.
Date: December 1994
Creator: Newell, Timothy C. (Timothy Charles)
Partner: UNT Libraries

Exploration of hierarchical leadership and connectivity in neural networks in vitro.

Description: Living neural networks are capable of processing information much faster than a modern computer, despite running at significantly lower clock speeds. Therefore, understanding the mechanisms neural networks utilize is an issue of substantial importance. Neuronal interaction dynamics were studied using histiotypic networks growing on microelectrode arrays in vitro. Hierarchical relationships were explored using bursting (when many neurons fire in a short time frame) dynamics, pairwise neuronal activation, and information theoretic measures. Together, these methods reveal that global network activity results from ignition by a small group of burst leader neurons, which form a primary circuit that is responsible for initiating most network-wide burst events. Phase delays between leaders and followers reveal information about the nature of the connection between the two. Physical distance from a burst leader appears to be an important factor in follower response dynamics. Information theory reveals that mutual information between neuronal pairs is also a function of physical distance. Activation relationships in developing networks were studied and plating density was found to play an important role in network connectivity development. These measures provide unique views of network connectivity and hierarchical relationship in vitro which should be included in biologically meaningful models of neural networks.
Date: December 2008
Creator: Ham, Michael I.
Partner: UNT Libraries

Expulsion of Carriers from the Double-Barrier Quantum Well and Investigation of Its Spectral and Transport Consequences

Description: In this work I investigate the expulsion of carriers from nanostructures using the double-barrier quantum well (DBQW) as an example and discuss manifestations of this effect in the spectrum of the DBQW in absence of bias, and in the tunneling current in presence of bias. Assuming equality of the Fermi energy in all regions of the considered system, I compute the relative density of carriers localized in the DBQW and conclude that a fraction of carriers is expelled from this nanostructure.
Date: March 1992
Creator: Chyla, Wojciech Tadeusz
Partner: UNT Libraries

Field Dependence of Optical Properties in Quantum Well Heterostructures Within the Wentzel, Kramers, and Brillouin Approximation

Description: This dissertation is a theoretical treatment of the electric field dependence of optical properties such as Quantum Confined Stark (QCS) shifts, Photoluminescence Quenching (PLQ), and Excitonic Mixing in quantum well heterostructures. The reduced spatial dimensionality in heterostructures greatly enhances these optical properties, more than in three dimensional semiconductors. Charge presence in the quantum well from doping causes the potential to bend and deviate from the ideal square well potential. A potential bending that varies as the square of distance measured from the heterostructure interfaces is derived self-consistently. This potential is used to solve the time-independent Schrodinger equation for bound state energies and wave functions within the framework of the Wentzel, Kramers, and Brillouin (WKB) approximation. The theoretical results obtained from the WKB approximation are limited to wide gap semiconductors with large split off bands such as gallium arsenide-gallium aluminum arsenide and indium gallium arsenide—indium phosphide. Quantum wells with finite confinement heights give rise to an energy dependent WKB phase. External electric and magnetic fields are incorporated into the theory for two different geometries. For electric fields applied perpendicular to the heterostructure multilayers, QCS shifts and PLQ are found to be in excellent agreement with the WKB calculations. Orthogonality between electrons and holes gives rise to interband mixing in the presence of an external electric field. On the contrary, intraband mixing between light and heavy holes is not sufficiently accounted for in the WKB approximation.
Date: August 1989
Creator: Wallace, Andrew B.
Partner: UNT Libraries

Fluorine Adsorption and Diffusion in Polycrystalline Silica

Description: The measurement of fluorine penetration into archeological flint artifacts using Nuclear Reaction Analysis (NRA) has been reported to be a potential dating method. However, the mechanism of how fluorine is incorporated into the flint surface, and finally transported into the bulk is not well understood. This research focuses on the study of the fluorine uptake phenomenon of flint mineral in aqueous fluoride solutions. Both theoretical and experimental approaches have been carried out. In a theoretical approach, a pipe-diffusion model was used to simulate the complicated fluorine transportation problem in flint, in which several diffusion mechanisms may be involved.
Date: December 1998
Creator: Jin, Jian-Yue
Partner: UNT Libraries

The Fractal Stochastic Point Process Model of Molecular Evolution and the Multiplicative Evolution Statistical Hypothesis

Description: A fractal stochastic point process (FSPP) is used to model molecular evolution in agreement with the relationship between the variance and mean numbers of synonymous and nonsynonymous substitutions in mammals. Like other episodic models such as the doubly stochastic Poisson process, this model accounts for the large variances observed in amino acid substitution rates, but unlike other models, it also accounts for the results of Ohta's (1995) analysis of synonymous and nonsynonymous substitutions in mammalian genes. That analysis yields a power-law increase in the index of dispersion and an inverse power-law decrease in the coefficient of variation with the mean number of substitutions, as predicted by the FSPP model but not by the doubly stochastic Poisson model. This result is compatible with the selection theory of evolution and the nearly-neutral theory of evolution.
Date: May 1997
Creator: Bickel, David R. (David Robert)
Partner: UNT Libraries

Fractional Brownian motion and dynamic approach to complexity.

Description: The dynamic approach to fractional Brownian motion (FBM) establishes a link between non-Poisson renewal process with abrupt jumps resetting to zero the system's memory and correlated dynamic processes, whose individual trajectories keep a non-vanishing memory of their past time evolution. It is well known that the recrossing times of the origin by an ordinary 1D diffusion trajectory generates a distribution of time distances between two consecutive origin recrossing times with an inverse power law with index m=1.5. However, with theoretical and numerical arguments, it is proved that this is the special case of a more general condition, insofar as the recrossing times produced by the dynamic FBM generates process with m=2-H. Later, the model of ballistic deposition is studied, which is as a simple way to establish cooperation among the columns of a growing surface, to show that cooperation generates memory properties and, at same time, non-Poisson renewal events. Finally, the connection between trajectory and density memory is discussed, showing that the trajectory memory does not necessarily yields density memory, and density memory might be compatible with the existence of abrupt jumps resetting to zero the system's memory.
Date: August 2007
Creator: Cakir, Rasit
Partner: UNT Libraries

Fractional Calculus and Dynamic Approach to Complexity

Description: Fractional calculus enables the possibility of using real number powers or complex number powers of the differentiation operator. The fundamental connection between fractional calculus and subordination processes is explored and affords a physical interpretation for a fractional trajectory, that being an average over an ensemble of stochastic trajectories. With an ensemble average perspective, the explanation of the behavior of fractional chaotic systems changes dramatically. Before now what has been interpreted as intrinsic friction is actually a form of non-Markovian dissipation that automatically arises from adopting the fractional calculus, is shown to be a manifestation of decorrelations between trajectories. Nonlinear Langevin equation describes the mean field of a finite size complex network at criticality. Critical phenomena and temporal complexity are two very important issues of modern nonlinear dynamics and the link between them found by the author can significantly improve the understanding behavior of dynamical systems at criticality. The subject of temporal complexity addresses the challenging and especially helpful in addressing fundamental physical science issues beyond the limits of reductionism.
Date: December 2015
Creator: Beig, Mirza Tanweer Ahmad
Partner: UNT Libraries

Growth and Characterization of β-Iron Disilicide, β-Iron Silicon Germanide, and Osmium Silicides

Description: The semiconducting silicides offer significant potential for use in optoelectronic devices. Full implementation of the materials, however, requires the ability to tailor the energy gap and band structure to permit the synthesis of heterojunctions. One promising approach is to alloy the silicides with Ge. As part of an investigation into the synthesis of semiconducting silicide heterostructures, a series of β-Fe(Si1−xGex)2 epilayer samples, with nominal alloy content in the range 0 < x < 0.15, have been prepared by molecular beam epitaxy on Si(100). I present results of the epitaxial and crystalline quality of the films, as determined by reflection high-energy electron diffraction, Rutherford backscattering spectroscopy, and double crystal x-ray diffraction, and of the band gap dependence on the alloy composition, as determined by Fourier transform infrared spectroscopy. A reduction in band gap was observed with increasing Ge content, in agreement with previous theoretical predictions. However Ge segregation was also observed in β-Fe(Si1−xGex)2 epilayers when x > 0.04. Osmium silicide films have been grown by molecular beam epitaxy on Si(100). The silicides have been grown using e-beam evaporation sources for both Os and Si onto Si(100) substrates at varying growth rates and temperatures ranging from 600-700ºC. The resulting films have been analyzed using reflection high-energy electron diffraction, Raman spectroscopy, reflectivity measurements, in-plane and out of plane X-ray diffraction and temperature dependent magnetotransport. A change in crystalline quality is observed with an increase in Si overpressure. For a lower silicon to osmium flux ration (JSi/JOs=1.5) both OsSi2 and Os2Si3 occur, whereas with a much larger Si overpressure (JSi/JOs>4), crystalline quality is greatly increased and only a single phase, Os2Si3, is present. The out-of-plane X-ray diffraction data show that the film grows along its [4 0 2] direction, with a good crystal quality as evidenced by the small FWHM in the rocking curve. ...
Date: August 2009
Creator: Cottier, Ryan James
Partner: UNT Libraries

High Efficiency High Power Blue Laser by Resonant Doubling in PPKTP

Description: I developed a high power blue laser for use in scientific and technical applications (eg. precision spectroscopy, semiconductor inspection, flow cytometry, etc). It is linearly polarized, single longitudinal and single transverse mode, and a convenient fiber coupled continuous wave (cw) laser source. My technique employs external cavity frequency doubling and provides better power and beam quality than commercially available blue diode lasers. I use a fiber Bragg grating (FBG) stabilized infrared (IR) semiconductor laser source with a polarization maintaining (PM) fiber coupled output. Using a custom made optical and mechanical design this output is coupled with a mode matching efficiency of 96% into the doubling cavity. With this carefully designed and optimized cavity, measurements were carried out at various fundamental input powers. A net efficie ncy of 81 % with an output power of 680 mW at 486 nm was obtained using 840 mW of IR input. Also I report an 87.5 % net efficiency in coupling of blue light from servo locked cavity into a single mode PM fiber. Thus I have demonstrated a total fiber to fiber efficiency of 71% can be achieved in our approach using periodically poled potassium titanyl phosphate (PPKTP). To obtain these results, all losses in the system were carefully studied and minimized.
Date: August 2011
Creator: Danekar, Koustubh
Partner: UNT Libraries

Highly Efficient Single Frequency Blue Laser Generation by Second Harmonic Generation of Infrared Lasers Using Quasi Phase Matching in Periodically Poled Ferroelectric Crystals

Description: Performance and reliability of solid state laser diodes in the IR region exceeds those in the visible and UV part of the light spectrum. Single frequency visible and UV laser diodes with higher than 500 mW power are not available commercially. However we successfully stabilized a multi-longitudinal mode IR laser to 860 mW single frequency. This means high efficiency harmonic generation using this laser can produce visible and UV laser light not available otherwise. In this study we examined three major leading nonlinear crystals: PPMgO:SLN, PPKTP and PPMgO:SLT to generate blue light by second harmonic generation. We achieved record high net conversion efficiencies 81.3% using PPMgO:SLT (~500 mW out), and 81.1% using PPKTP (~700 mW out). In both these cases an external resonance buildup cavity was used. We also studied a less complicated single pass waveguide configuration (guided waist size of ~ 5 um compared to ~60 um) to generate blue. With PPMgO:SLN we obtained net 40.4% and using PPKT net 6.8% (110mW and 10.1 mW respectively).
Date: August 2014
Creator: Khademian, Ali
Partner: UNT Libraries

How Cooperative Systems Respond to External Forces

Description: Cooperative interactions permeate through nature, bringing about emergent behavior and complexity. Using a simple cooperative model, I illustrate the mean field dynamics that occur at the critical point of a second order phase transition in the framework of Langevin equations. Through this formalism I discuss the response, both linear and nonlinear, to external forces. Emphasis is placed on how information is transferred from one individual to another in order to facilitate the collective response of the cooperative network to a localized perturbation. The results are relevant to a wide variety of systems, ranging from nematic liquid crystals, to flocks and swarms, social groups, and neural networks.
Date: May 2014
Creator: Svenkeson, Adam
Partner: UNT Libraries

Interaction of Plasmons and Excitons for Low-Dimension Semiconductors

Description: The effects of surface plasmon for InGaN/GaN multi-quantum wells and ZnO nanoparticles optical linear and nonlinear emission efficiency had been experimentally studied. Due to the critical design for InGaN MQWs with inverted hexagonal pits based on GaN, both contribution of surface plasmon effect and image charge effect at resonant and off resonant frequencies were experimentally and theoretically investigated. With off- resonant condition, the InGaN MQWs emission significantly enhanced by metal nanoparticles. This enhancement was caused by the image charge effect, due to the accumulation of carriers to NPs region. When InGaN emission resonated with metal particles SP modes, surface Plasmon effect dominated the emission process. We also studied the surface plasmon effect for ZnO nanoparticles nonlinear optical processes, SHG and TPE. Defect level emission had more contribution at high incident intensity. Emissions are different for pumping deep into the bulk and near surface. A new assumption to increase the TPE efficiency was studied. We thought by using Au nanorods localized surface plasmon mode to couple the ZnO virtual state, the virtual state’s life time would be longer and experimentally lead the emission enhancement. We studied the TPE phenomena at high and near band gap energy. Both emission intensity and decay time results support our assumption. Theoretically, the carriers dynamic mechanism need further studies.
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Date: December 2014
Creator: Lin, Jie (physicist)
Partner: UNT Libraries

The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms

Description: Nanoporous low-k dielectrics are used for integrated circuit interconnects to reduce the propagation delays, and cross talk noise between metal wires as an alternative material for SiO2. These materials, typically organosilicate glass (OSG) films, are exposed to oxygen plasmas during photoresist stripping and related processes which substantially damage the film by abstracting carbon, incorporating O and OH, eventually leading to significantly increased k values. Systematic studies have been performed to understand the oxygen plasma-induced damage mechanisms on different low-k OSG films of various porosity and pore interconnectedness. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy are used to understand the damage kinetics of O radicals, ultraviolet photons and charged species, and possible ways to control the carbon loss from the film. FTIR results demonstrate that O radical present in the plasma is primarily responsible for carbon abstraction and this is governed by diffusion mechanism involving interconnected film nanopores. The loss of carbon from the film can be controlled by closing the pore interconnections, He plasma pretreatment is an effective way to control the damage at longer exposure by closing the connections between the pores.
Date: August 2011
Creator: Behera, Swayambhu Prasad
Partner: UNT Libraries

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active nano-sized precipitates in silica to form the active layer of an opto-electronic device was achieved with ion implantation and thermal annealing. Three material systems were investigated. These systems consisted of carbon, silicon and metal silicide based nanocrystals. The physical morphology and electronic properties were monitored using a variety of material characterization techniques. Rutherford backscattering/channeling were used to monitor elemental concentrations, photoluminescence was used to monitor the opto-electronic properties and transmission electron microscopy was used to study the intricate morphology of individual precipitates. The electronic properties and the morphology were studied as a function of implant dose, anneal times and anneal ...
Date: May 2006
Creator: Mitchell, Lee
Partner: UNT Libraries

Ion Beam Synthesis of Binary and Ternary Transition Metal Silicide Thin Films

Description: Among the well-known methods to form or modify the composition and physical properties of thin films, ion implantation has shown to be a very powerful technique. In particular, ion beam syntheses of binary iron silicide have been studied by several groups. Further, the interests in transition metal silicide systems are triggered by their potential use in advanced silicon based opto-electronic devices. In addition, ternary silicides have been by far less studied than their binary counterparts despite the fact that they have interesting magnetic and electronic properties. In this study, we investigate ion beam synthesis of Fe-Si binary structures and Fe-Co-Si ternary structures. This work involves fundamental investigation into development of a scalable synthesis process involving binary and ternary transitional metal silicide thin films and Nano-structures using low energy ion beams. Binary structures were synthesized by implanting Fe- at 50 keV energy. Since ion implantation is a dynamic process, Dynamic simulation techniques were used in these studies to determine saturation fluences for ion implantation. Also, static and dynamic simulation results were compared with experimental results. The outcome of simulations and experimental results indicate, dynamic simulation codes are more suitable than static version of the TRIM to simulate high fluence, low energy and, heavy ion implantation processes. Furthermore, binary Fe-Si phase distribution was determined at different implantation fluences and annealing temperatures. A higher fluence implantation at 2.16×1017 atoms/cm2 and annealing at 500 oC showed three different Fe-Si phase formations (β-FeSi2, FeSi and Fe3Si) in substrate. Further, annealing the samples at 800 oC for 60 minutes converted the Fe3Si phase into FeSi2 and FeSi phases. As an extension, a second set of Fe- ion implantations was carried with the same parameters while the substrate was placed under an external magnetic field. External magnetic fields stimulate the formation of magnetic phase centers in the ...
Date: December 2016
Creator: Lakshantha, Wickramaarachchige Jayampath
Partner: UNT Libraries

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Description: The systematic study of the formation of &#946;-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline &#946;-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of &#946;-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of &#946;-SiC crystals decreased and the amount of &#946;-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of &#946;-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of &#946;-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process in silica and the characterization of formed clusters is presented. Silicon dioxide layers ~500 nm thick are thermally grown on a Si (100) wafer. The SiO2 layers are then implanted with 70 keV carbon ions at a fluence of 5×1017 atoms/cm2. The implanted samples are annealed 1100 °C for different time periods of 10 min., 30 min., 60 min., 90 min., and 120 min., in the mixture of argon and hydrogen gas (96 % Ar + 4% hydrogen). Photoluminescence spectroscopy reveals UV to visible emission from the samples. A detail mechanism of the photoluminescence and its possible origin is discussed ...
Date: May 2011
Creator: Poudel, Prakash Raj
Partner: UNT Libraries