Degradation Mechanisms and Dynamics of Silicon Telluride: A Guide to the Effective Fabrication and Characterization of Silicon Telluride-Based Devices
Description:
Silicon telluride (Si2Te3) and many other tellurium containing compounds show emergent Raman peaks located at ~120 cm-1 and ~140 cm-1 as they age. The origin of these two emergent peaks is controversial in the literature and has been attributed to myriad causes such as the intrinsic Raman modes of the telluride materials, surface oxidation, defects, double resonances, and tellurium precipitates. The controversial nature of these peaks has led to the misidentification of highly degraded materia…
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Date:
December 2023
Creator:
Hathaway, Evan Allen
Partner:
UNT Libraries