Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon
Description:
High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in…
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Date:
May 1999
Creator:
Venezia, Vincent C.
Partner:
UNT Libraries