Investigation of Room Temperature Soft Ferromagnetism in Indium Phosphide Substrate Synthesized via Low Energy Nickel Ion Implantation
Description:
In this work, we have utilized an ion beam process known as gettering to migrate implanted Ni ions much deeper into the bulk substrate than their initial projected end of the range. The projected mean depth is known as Rp. The gettering effect is the most crucial part of the fabrication and we have found that for an H fluence of 3x 1016 cm-2 there is a threshold fluence of approximately 7.5 x 1015 cm-2 that cannot be surpassed if the gettering process is to be completed along with the substrat…
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Date:
May 2021
Creator:
Jones, Daniel C.
Partner:
UNT Libraries