Investigation of the effects of compressive uniaxial stress on the hole carriers in p-type InSb

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The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples of InSb at 77 K, 64 K, and 12 K are reported. Unilaxial compressions as high as 6 kbar were applied to samples oriented in the {001} and {110} directions. The net hole concentration of the samples were about 5x10^13 cm^-3 at 77 K as determined from the Hall coefficient at 24 kilogauss.

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Vaughn, Bobby J. December 1975.

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The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples of InSb at 77 K, 64 K, and 12 K are reported. Unilaxial compressions as high as 6 kbar were applied to samples oriented in the {001} and {110} directions. The net hole concentration of the samples were about 5x10^13 cm^-3 at 77 K as determined from the Hall coefficient at 24 kilogauss.

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  • December 1975

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  • Nov. 15, 2016, 10:54 a.m.

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  • Aug. 16, 2017, 11:32 a.m.

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Vaughn, Bobby J. Investigation of the effects of compressive uniaxial stress on the hole carriers in p-type InSb, thesis or dissertation, December 1975; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc935820/: accessed January 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .