Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon Metadata

Metadata describes a digital item, providing (if known) such information as creator, publisher, contents, size, relationship to other resources, and more. Metadata may also contain "preservation" components that help us to maintain the integrity of digital files over time.

Title

  • Main Title Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon

Creator

  • Author: Lo, Cheuk Chi
    Creator Type: Personal
  • Author: Persaud, Arun
    Creator Type: Personal
  • Author: Dhuey, Scott
    Creator Type: Personal
  • Author: Olynick, Deirdre
    Creator Type: Personal
  • Author: Borondics, Ferenc
    Creator Type: Personal
  • Author: Martin, Michael C.
    Creator Type: Personal
  • Author: Bechtel, Hans A.
    Creator Type: Personal
  • Author: Bokor, Jeffrey
    Creator Type: Personal
  • Author: Schenkel, Thomas
    Creator Type: Personal

Contributor

  • Sponsor: Lawrence Berkeley National Laboratory. Accelerator & Fusion Research Division.
    Contributor Type: Organization

Publisher

  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: Berkeley, California
    Additional Info: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

Date

  • Creation: 2009-06-10

Language

  • English

Description

  • Content Description: We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.
  • Physical Description: 10

Subject

  • Keyword: Diffusion
  • Keyword: Quantum Computing, Nanoelectronics
  • Keyword: Geometry
  • Keyword: Processing
  • Keyword: Spin
  • STI Subject Categories: 77
  • Keyword: Detection
  • Keyword: Architecture
  • Keyword: Electrons
  • Keyword: Transport Quantum Computing, Nanoelectronics
  • Keyword: Qubits
  • Keyword: Fabrication
  • Keyword: Substrates
  • Keyword: Transistors
  • Keyword: Resonance
  • Keyword: Silicon

Source

  • Journal Name: Semiconductor Science and Technology

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: LBNL-2204E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 965794
  • Archival Resource Key: ark:/67531/metadc934232