Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon Metadata

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  • Main Title Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon


  • Author: Lo, Cheuk Chi
    Creator Type: Personal
  • Author: Persaud, Arun
    Creator Type: Personal
  • Author: Dhuey, Scott
    Creator Type: Personal
  • Author: Olynick, Deirdre
    Creator Type: Personal
  • Author: Borondics, Ferenc
    Creator Type: Personal
  • Author: Martin, Michael C.
    Creator Type: Personal
  • Author: Bechtel, Hans A.
    Creator Type: Personal
  • Author: Bokor, Jeffrey
    Creator Type: Personal
  • Author: Schenkel, Thomas
    Creator Type: Personal


  • Sponsor: Lawrence Berkeley National Laboratory. Accelerator & Fusion Research Division.
    Contributor Type: Organization


  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: Berkeley, California
    Additional Info: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)


  • Creation: 2009-06-10


  • English


  • Content Description: We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.
  • Physical Description: 10


  • Keyword: Diffusion
  • Keyword: Quantum Computing, Nanoelectronics
  • Keyword: Geometry
  • Keyword: Processing
  • Keyword: Spin
  • STI Subject Categories: 77
  • Keyword: Detection
  • Keyword: Architecture
  • Keyword: Electrons
  • Keyword: Transport Quantum Computing, Nanoelectronics
  • Keyword: Qubits
  • Keyword: Fabrication
  • Keyword: Substrates
  • Keyword: Transistors
  • Keyword: Resonance
  • Keyword: Silicon


  • Journal Name: Semiconductor Science and Technology


  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI


  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article


  • Text


  • Report No.: LBNL-2204E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 965794
  • Archival Resource Key: ark:/67531/metadc934232