Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon Page: 1 of 10
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Device fabrication and transport measurements of
FinFETs built with 28Si SOI wafers towards donor
qubits in silicon
Cheuk Chi Lo,3, Arun Persauda, Scott Dhuey2, Deirdre
Olynick2, Ferenc Borondics2, Michael C. Martina, Hans A.
Bechtel3, Jeffrey Bokor",2 and Thomas Schenkel3
1 Department of Electrical Engineering and Computer Sciences, University of
California, Berkeley, CA 94720, USA
2 The Molecular Foundry, E.O. Lawrence Berkeley National Laboratory, Berkeley,
CA 94720, USA
s Accelerator and Fusion Research Division, E.O. Lawrence Berkeley National
Laboratory, Berkeley, CA 94720, USA
4 Advanced Light Source, E.O. Lawrence Berkeley National Laboratory, Berkeley,
CA 94720, USA
E-mail: cclo@eecs . berkeley. edu
Abstract. We report fabrication of transistors in a FinFET geometry using
isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin
coherence in natural silicon is limited by spectral diffusion due to the residual 295i
nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a
promising candidate for forming spin quantum bit devices. The FinFET architecture
is fully compatible with single-ion implant detection for donor-based qubits, and the
donor spin-state readout through electrical detection of spin resonance. We describe
device processing steps and discuss results on electrical transport measurements at 0.3
PACS numbers: 03.67.Lx 85.35.-p
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Lo, Cheuk Chi; Persaud, Arun; Dhuey, Scott; Olynick, Deirdre; Borondics, Ferenc; Martin, Michael C. et al. Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon, article, June 10, 2009; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc934232/m1/1/: accessed January 18, 2019), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.